DIODE 1N4454 Search Results

Contextual Info: 1N4454 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g

Contextual Info: 1N4454 Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: F2/10K per Ammo tape (52mm), 50K/box

Contextual Info: 1N4454 Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: F2/10K per Ammo tape (52mm), 50K/box

OF VR 10K

Abstract: 10k VR 1N4454 DO-204AH diode box
Contextual Info: 1N4454 Small Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box

Contextual Info: 1N4454 Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box

diode 1n4454

Contextual Info: 1N4454 Small Signal Diodes min. 1.083 27.5 DO-35 Features max. ∅.079 (2.0) • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Cathode Mark min. 1.083 (27.5) max. .150 (3.8) Reverse Voltage 75V Forward Current 500mA Case: DO-35 Glass Case

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

1N4454

Contextual Info: 1N4454 Small Signal Switching Diode. Peak Reverse Voltage VRM = 75 V. Maximum . Page 1 of 1 Enter Your Part # Home Part Number: 1N4454 Online Store 1N4454 Diodes Small Signal Switching Diode. Peak Reverse Voltage VRM Transistors = 75 V. Maximum Average Rectified Current IAV = 150 MA.

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

DO-213AA 1N4148

Abstract: 1n914 surface mount diode 1N4148 JANTXV 1N4938 1N4938 JANTX 1N4148 1N4150 1N4153 1N4454 1N914
Contextual Info: Glass Signal Diode Series Reliability & Qualification Data This is the reliability and qualification data for the glass axial lead and surface mount signal diode series. Features JAN/JANTX/JANTXV available Ultra fast reverse and forward recovery Low forward recovery voltage

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

1N4148 chip

Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

Contextual Info: TYPE 1N3064 SILICON SWITCHING DIODE B U L L E T IN N O . D L -S 7 3 9 1 1 4 , S E P T E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 9 7 3 FA ST SWITCHING DIODE • Rugged Double-Plug Construction • Electrically Equivalent to 1N4454 DO-35 and 1N4532 (DO-34)

1n4148

Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
Contextual Info: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

CMPD2836

Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

1n4148 die chip

Abstract: 1n4448 die chip DIODE CHIP 1N4148 CMPD914 1N4148.1N4448 1N4148 1n4148 die 1N4448 1N4454 1N914B
Contextual Info: Central TM PROCESS CPD83V Switching Diode Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

1n4148 die

Abstract: DIODE CHIP 1N4148 1n4148 die chip 1N4148.1N4448 1n914 equivalent 1N4454 1N4148 CMPD914 1N914B 1N4148 chip
Contextual Info: PROCESS CPD63 Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

1n4148 die chip

Abstract: 1n4448 die chip CMPD914 CPD83V DIODE CHIP 1N4148 1n4148 1n4154 diode 1n914 1n4148 die 1N914 DIE
Contextual Info: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

1N4149

Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Contextual Info: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm

u34 diode

Abstract: 1N4454UR-1 1N4454 1N4454-1 DO-213AA LL4454 diode 1n4454 BKC Semiconductors 3-4U34
Contextual Info: Silicon Switching Diode 1N4454 DO-35 Glass Package Applications Used in genera! purpose applications, whereperformanpe andswitching DO-35 Glass Package F e a tu re nominal dimensions ;PKC'sSipsa Bond jplatiriig - Length fbrprobiernfree solderability 0.145"

1N4454

Abstract: LL4454
Contextual Info: 1N4454 VISHAY SILICON SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version LL4454 T D Mechanical Data_ DO-35

mmbd1201-1205

Abstract: 1N4454 mmbd1201
Contextual Info: 1N4454 ta Discrete POW ER & Signa l Technologies National Semiconductor" 1N4454 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value

1N4454UR-1

Abstract: BKC Semiconductors LL34 diode smd
Contextual Info: Silicon Switching Diode 1N4454 DO-35 Glass Package Applications Used in general purpose applications, where performance and switching speed are important. Features DO-35 Glass Package nominal dimensions glass 0.02ÛT Six sigma quality 0.6^1 Metallurgically bonded