DD03 Search Results

thyristor FT1000A

Abstract: g3000s R02AM Powerex
Contextual Info: ^ POWEREX INC ~OE D lfl 7 2 ^ 2 1 - DD03Dt4 7 I 0 T ^ 2 5 ^ -2 ./ m FT1000A Powerex, Inc. Hlllla Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Ave. G, Durand, BP107, 72003 LeMans, France (43) 72.7S.1S Phase Control SCR 1000 Amperes Avg

Contextual Info: DD03S/D Series 3W DC/DC CONVERTER, DIP-Package, 2:1 Wide Input Range FEATURES Š Efficiency up to 81% Š DIP Package with Industry Standard Pinout Š Wide 2:1 Input Range Š Operating Temperature Range –40°C to +85°C Š Isolation Voltage 1500 VDC Š Short Circuit Protection

ECG1011

Abstract: Philips ECG g1009 KF 520 MTVA0100N05W3 ECG1009 ECG1010 6k8k
Contextual Info: LbSBTEÔ DD0373M 0 17E D PHILIPS E C G INC EC G 1009 1W AUDIO POW ER AM PLIFIER ECG1010 2W AUDIO POW ER AM PLIFIER sem iconductors ECG1011 3W AUDIO POW ER AM PLIFIER Dimensions In Mllllm«t«rs ECG1009 Ta=25°C Absolute Maximum Ratings V 16 Vcc max Maximum Supply Voltage

SM1U21PDT

Abstract: HDS010 T0257AA T0-257AA SM1U21
Contextual Info: SEMTECH CORP SflE D • SUPERFAST RECTIFIERS IN HERMETIC ISOLATED T0257AA PACKAGE fl13 T 13 ^ DD03007 Olb SM1U21* SM1U41* SM1U51* SM1U61* These devices offer two ultrafast rectifiers mounted in isolated and hermetically sealed packages. Use of Beryllia substrates ensures the lowest possible thermal impedance,

B80 c1500 bridge rectifier

Abstract: c1500 rectifier B80 c1500 rectifier Bridge Rectifier C800 B80 smd diode 206 3N257 DF08S SMD diode bridge B250 Bridge Rectifiers smd rectifier bridge W06M DF06S 214 H
Contextual Info: GENL INSTR/ POWER 5SE D • T -9 /-& 0 3fl1D137 DD03333 3 ■ Single Phase Bridge Rectifiers 0.9 PKG T YP E 1.0 OFM D FH DFS KBPM WM VRRM vol(s 50 B40 C800DM B40 C800 EDF1AM DF005M ff DF005S 3N246 B40 C1000 in B80 C800DM B80 C800 EDF1BM* DF01M ff DF01S 3N247

DUP1

Contextual Info: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i

skt40

Abstract: SKT40-04C SKT40-08C skt semikron semikron skt 50
Contextual Info: ¿IE D • fil3bb?l DD03472 732 « S E K G S EM IK K O N SEMIKRON INC Vrsm Vrrm Vdrm \d-t /c r Itrms (maximum values for continuous operation) 63 A I 78 A lTAv(sin.180;l case ” . °C) 50 A (78 °C) 40A(80°C) V V V /|is 500 400 200 SKT40/04 C 700 600

20 led VU meter transistor

Abstract: VU METER 32 led 50 led VU meter ba3706 BA612S 16 led VU meter ic level audio meter BA684A SLO 365 R Peak level meter ic
Contextual Info: ROHM CO IC 4 GE LTD D Hl 7 f l 2 M cH DD03252 7 B3RHM II?» J, JI" - * r - 7 ? - 2 i • Level Meter Drivers Function Type Package Conliguralion No.of pins Features Reference Catalog No.3121 BA695 3-point LED auto-scan meter SIP 9 Wide supply voltage range 4.5~14V .

Contextual Info: TAIUAN L IT O N E LE C TRONIC LITEM ^ 11 m ED • S 83 S tS S DD035DK 2bb l ig h t s o u r c e IT L IT 1 -V i LTM-88X27 FEATURES • E X C E LLE N T C H AR AC TER S APPEARANCES. LOW POW ER R E Q U IR E M E N T . • M E C H A N IC A L L Y A N D S P E C T R A L L Y M A T C H E D

Contextual Info: SIE D • Ö13bb71 DD037S2 b37 « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus lc = 1 A ,V be = - 2 V V V V V A 300 150 8 1000 - 4 0 . . . + 150 - 4 0 . . . + 125 2500- A A A W °C °C V o II O D. C. tp = 1 ms Ib Tease —25 °C Ptot Tvj Tstg Visol

MB8167A

Abstract: B8167A-4S
Contextual Info: FUJITSU MIC RO EL E C T R ON I C S 7ö » Ê 1 3 7 M “ì7t,a DD03410 b I — — 3 7497 62 FUJIT SU M I C R O E L E C T R ON I C S - — y ' 7ÖC 0 34 10 F U J IT S U MOS Memories • M B 8 1 6 7 A -5 5 , M B 8 1 6 7 A - 7 0 NMOS 16,384-Bit Static Random Access Memory

DD03

Contextual Info: T R W ELEK CilPNT/ R F f l 'i De | Û02S0E4 DD03ÖS3 7 | R F Devices Division TRW Electronic Components Group Ù Î*O Ï CA527Q, C A5 Î70 CATV Amplifiers • 450 M H z • 1 7 .2 dB Gain • Lo w Noise Figure • L o w Distortion • All Gold M etallization

ECG1011

Abstract: ECG1010 KF10 ecg1009
Contextual Info: 17E D PHILIPS E C G INC • btiSBTHfi DD0373M 0 ECG 1009 1W A U D IO P O W E R A M P L IF IE R ECG 1010 2 W A U D IO PO W E R A M P L IF IE R semiconductors ECG1011 3W A U D IO P O W E R A M P L IF IE R Dimensions In Millimeters ECG1009 Ta=25°C Vcc RL 11

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 DD037S3 t> ■ î-91-01 P R O C E S S NJ16 Process NJ16 N-Channel Junction Field-Effect Transistor Process NJ16 is an N-channel junction fieid-effect transistor designed for low-current, general-purpose applications. This process is particularly useful in

Contextual Info: ALPHA IND / SEMICONDUCTOR MAE D • 0585443 DD03,2G1 DfiD ■ ALP Industry Standard PIN Diode Chips 'T -07-1 s' Features ■ ■ ■ ■ General Purpose PIN Switching Diodes Oxide/Nitride Passivated Series Resistance to 0.4 Ohms Switching Time to 5 ns Types

skt 2500 semikron

Abstract: B344 semikron skt 24 SKT520 SKT600 SKT760 T2520 B342 d Scans-00144241
Contextual Info: S1E P Ö13bb71 DD03SD0 477 • SEK G SEMIKRDN SEMIKRON INC V rsm V rrm V drm fV -dt1JcT Itrms m axim um values for continuous operation 1400 A SKT 520 V V V/(is 780 A 1900 1800 1000 SKT 520/18 E 2100 2000 1000 SKT 520/20 E 2300 2200 1000 SKT 520/22 E 2500

10SP005

Abstract: bridge B250 C5000 B125 bridge diode "Bridge Rectifiers" b380 b40 bridge rectifier B250 Bridge Rectifiers KBL08 diode bridge B250 bridge diode B80 diode zener diode cross reference
Contextual Info: GENL INSTR/ POWER 25E D • 36=10137 DD0333S 7 ■ SIN G LE PHASE BR ID G E R E CT IFIERS continued 3.0 IMA) PGK TYPE KBPC1 VRRM (volts) f 4.0 6.0 5.0 BC KBU KBPC6 50 KBPC1005 B40 C3700/2200 KBL005 ff KBU4A RKBU4A B40 C5000/3300 KBU 6A# KBPC6005 RKBPC6005

Contextual Info: Product Bulletin OPB6IO b?*îflSflD DD03DQD ‘iOT OPTEK June 1996 Slotted Optical Switch Type OPB 6IO Features Absolute Maximum Ratings T a = 2 5 ° C u n le s s o th e rw is e n o te d • • • • • Storage and Operating T e m pe ratu re. -40° C to +100° C

A1396

Contextual Info: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper­

VT20C

Contextual Info: V L S I TECHNOLOGY INC 1ÖE D =130034? DD03Q42 □ • T - M - 8 3 -6 8 VLSI T ech n o lo g y , in c . VT20C71 • VT20C72 4,096 x 4 SEPARATE I/O SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 25, 35 ns The VT20C71 and VT20C72 are high-speed static RAMs organized

Contextual Info: TAIWAN LITON ELECTRONIC flflBSb'ii DD033L7 32G • TLIT T -l 3mm RESISTOR LAMPS LTL-4201-R1/R2 RED LTL-4211-R1/R2 BRIGHT RED LTL-4231-R1/R2 GREEN LTL-4251-R1/R2 YELLOW LTL*4291-R1/R2 ORANGE FEATURES • IN T E G R A L C U R R E N T L IM IT IN G R E S IS T O R .

Contextual Info: r- 2812672 D I A L Î G H T C Ö R P Efl 12b?5 DD03H4L 1 ^ I T r ic o lo r R e d , G re e n , Y e llo w G a P S o lid S t a t e L E D L a m p 521-9354 Features • High lum inous intensity • Low power consum ption — IC com patible • V ib ra tio n and shock resistant

L89C

Abstract: 1S697 BP107 FT1000A FT1000A-20 T-25 f1032
Contextual Info: ~OE POWEREX IN C ^ D lf l 7 2 ^ 2 1 - DD03Dt4 7 I 0 T ^ 2 5^-2./ m FT1000A Powerex, Inc. Hlllla Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Ave. G, Durand, BP107, 72003 LeMans, France (43) 72.7S.1S Phase Control SC R 1000 Amperes Avg

LC7970

Abstract: 16 PU DIP28S 3029a CNF1
Contextual Info: ISE D I ? TT 7 □•7b DD03b3fci fl | SANYO SEMICONDUCTOR CORP i T - ^ S ' 13> 70 C M O S IC 3029A Key Scan Detector for Key Board of Capacitance Type I936A Functions Features . Contains an 8-input 1-output analog multiplexer. . Contains 2 CMOS OP amplifiers open loop gain: approximately 45dB typ. .