VT20C Search Results

vt20c18

Abstract: VT20C19
Contextual Info: VLSI Technology inc. VT20C18 • VT20C19 2,048 x 8 SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 20, 25, and 35 ns The VT20C18 and VT20C19 are high-speed static RAMs SRAMs that are organized as 2,048 words by 8 bits. They were developed in con­

Contextual Info: V L S I T e c h n o l o g y , in c . VT20C50 1,024x4 CLEARABLE SRAM FEATURES DESCRIPTION • High speed: 15 ns maximum access time The VT20C50 Clearable SRAM is a high-performance static RAM with a 1,024 x 4 organization. It offers TTLcompatible input and output levels, and

Contextual Info: V L S I Tech no lo gy , in c . VT20C71 • VT20C72 4,096 x 4 SEPARATE I/O SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 25, 35 ns The VT20C71 and VT20C72 are high-speed static RAMs organized as 4,096 words by 4 bits. They were developed in conjunction with VISIC

VT20C18-35

Abstract: VT20C18 VT20C18-20 vt20c19
Contextual Info: V L S I Tech n o lo g y in c . VT20C18 • VT20C19 2,048 x 8 SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 20, 25, and 3 5 ns Th e V T 2 0 C 1 8 and V T 2 0 C 1 9 are high-speed static RA M s SR A M s that are organized as 2 ,0 4 8 words by

VT20C68-20

Abstract: VT20C68-35 VT20C68 J 6920 A VT20C
Contextual Info: V L S I 1ÔE 1> TECHNO LOG Y INC V L S I Te c h n o l o g y • =1300347 □DG3D37 7 ■ T-Hb-Z3 - / 2. in c . VT20C68 • VT20C69 4,096 x 4 SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 2 0 ,2 5 , and 35 ns The VT20C68 and VT20C69 are high-speed static RAMs SRAMs

vt20c78

Contextual Info: VLSI Tech n o lo gy , in c . VT20C78 • VT20C79 4,096 x 4 SRAM FEATURES • High-speed access and cycle times: 20, 25, and 35 ns • 24-lead, 300 mil SOG and SOJ packages • Fast output enable control • Pin-compatible with standard 4K x 4 SRAMs • Fast chip select option VT20C79

VT20C

Contextual Info: V L S I TECHNOLOGY INC 1ÖE D =130034? DD03Q42 □ • T - M - 8 3 -6 8 VLSI T ech n o lo g y , in c . VT20C71 • VT20C72 4,096 x 4 SEPARATE I/O SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 25, 35 ns The VT20C71 and VT20C72 are high-speed static RAMs organized

vt20c98

Contextual Info: V L S I TECHNOLOGY INC IflE D • =1300347 Q G 0 3 1 Ô 3 7 ■ V L S I Technology in c . P R E L IM IN A R Y VT20C98 • VT20C99 8 ,1 9 2 x 8 SRA M FEATURES DESCRIPTION • High speed a c c e ss and cycle times: 25, 30 and 35 ns T he V T 2 0 C 9 8 and V T 2 0 C 9 9 are

VT20C68

Contextual Info: VLSI Tech n o lo gy , in c . VT20C68 • VT20C69 4,096 x 4 SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 20, 25, and 35 ns The VT20C68 and VT20C69 are high-speed static RAMs SRAMs that are organized as 4,096 words by 4 bits. They were developed in con­

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

IDT7164L25

Abstract: M4821 Mostek IDT7164L20 IDT7164L30 IDT7164L35 IDT7164S20 IDT7164S25 IDT7164S35 IDT7165L-30
Contextual Info: 96 6 4 K x m % tt £ rc TAAC max ns) TCAC max (ns) 4 CMOS + TOE max (ns) TOH min (ns) y TOD nax (ns) y S t a t i c W TWP min (ns) TDS •in (is) R A M (81 9 2 X 8 ) 2 8 P I N A 14 TDH min (ns) TWD ■in (ns) TWR nax (ns) V D D or V C C (V) I DD max (mA)

6116 RAM

Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
Contextual Info: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS

VT20C68-20

Abstract: 4c45 UPD4314C-45 VT20C69-25 V61C68P-35 V61C68P-35L V61C68P-45 V61C68P-45L V61C68P-55L VT20C68-35
Contextual Info: 43 16 K X A ••/ CMOS 1h ¡WdyKiKI æ £ tt £ VC TAAC max ns) TCAC max (ns) TOR max (ns) TOH min (ns) TOD max (ns) > y TWP »in (ns) S t a t i c ft RAM TDS min (ns) (40 96 x4 ) m il TDH (ns) TWD •in (ns) TWR max (ns) V D D or V C C (V) 2 0 P I N 6 1 6 8

VT20C18-35

Abstract: VT20C18-25 nec cmos V62C16-15 VT20C18 VT20C18-20 VT20C19-20 VT20C19-25 VT20C19-35 Z5517AP
Contextual Info: - 54 1 6 K CMOS X A m % it £ °C TAAC max (ns) TCAC max (ns) TOE max (ns) TOH rain (ns) TOD max (ns) RAM S t a t i c > 7' 1# ( 2 0 4 8 x 8 ) m tt TWP nin TDS TDH min (ns) (ns) (ns) TWD min (ns) T»R max (ns) V D D or V CC (V) 2 4 P I N 6 1 1 6 m I DD max