D5 TRANSISTOR NPN Search Results

Contextual Info: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : • • High Speed Switching Time Complementary to 2SA1905 SÍI + D5 = ^-4V (Max.) (at Ic = 3A)

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code

74f832

Abstract: f1804 74F240 74F845 AN215 74F30245 74F653 6kd-5 F1808 IEEE488 TRAnSCEIVER
Contextual Info: INTEGRATED CIRCUITS AN215 74FXXXX “Light Load” input products 1988 Apr Philips Semiconductors Philips Semiconductors Application note 74FXXXX “Light Load” input products Major “Light Load” Input Features Introduction • Patented “Light Load” NPN input structure

f1804

Abstract: 74F653 74F240 74F845 AN215 intel 8286 "IEEE-488 GPIB" 74F863
Contextual Info: INTEGRATED CIRCUITS AN215 74FXXXX “Light Load” input products IC15 Data Handbook Philips Semiconductors April 1988 Philips Semiconductors Application note 74FXXXX “Light Load” input products Major “Light Load” Input Features Introduction • Patented “Light Load” NPN input structure

Transistor J550

Abstract: VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550
Contextual Info: Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —

1N5761

Contextual Info: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

transistor smd LC 77

Abstract: smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901
Contextual Info: Philips Semiconductors Product specif ication UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a

Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial * - * microwave power transistor R02731B20W FEA TUR ES Q U IC K R E F E R E N C E DATA • Suitable for short and medium Microwave performance up to T mb = 25 °C in a common base class C

MARKING W2 SOT23 TRANSISTOR

Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
Contextual Info: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23

MARKING W2 SOT23 TRANSISTOR

Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
Contextual Info: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)

Contextual Info: SEM ICONDUCTOR KRX206U TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including tw o devices in US6. U ltra Super m ini type w ith 6 leads. • W ith B uilt-in bias resistors.

pc817a

Abstract: D2257 transistor t114 330UF 400V LR2257 maxim 1909 ac PWM 220v 1N4148 1N5817 EN55022A
Contextual Info: LESHAN RADIO COMPANY, LTD. LR2257 AC/DC Current Mode PWM power management controller The LR2257 AC—DC is a high efficiency current-mode PWM power supply controller that drives an internal NPN transistor for high voltage switching. Apply with BiCMOS technology, the

toroid FT10

Abstract: MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629
Contextual Info: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power

R22A

Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

1N5761

Abstract: RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10
Contextual Info: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA Designer's BUL45 * BUL45F*  Data Sheet NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power

2SD2440

Contextual Info: TOSHIBA 2SD2440 TO SHIBA TRANSISTOR SWITCHING APPLICATION • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) Low Saturation Voltage VCE(sat) = 1-2 V (MAX.) (IC = 5A, IB = 1A) High Speed : tf = 1 f a (TYP.) (Ic = 5 A, IB = ±0.5 A)

Transistor J550

Abstract: MRF426 "30 mhz" driver Amplifier 100 watt hf transistor 12 volt 1N4997 2204B MOTOROLA LINEAR HF MOTOROLA MRF426
Contextual Info: MOTOROLA Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —

1N5761

Abstract: npn BUL45G bul45a
Contextual Info: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)

toroid FT10

Abstract: 1N5761 diode 1n400 MTP12N10 MTP8P10 MUR105 MUR150 1N4007 BUL45 MJE210
Contextual Info: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

TRANSISTOR c 5578 B

Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor
Contextual Info: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●

bul45g

Contextual Info: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)

IN5822 diode

Abstract: Driver with MJE13003
Contextual Info: BL8080 HIGH INTEGRATED PWM CONTROLLER GENERAL DISCRIPTION FEATURES The BL8080 is a PWM controller designed to drive high voltage NPN transistors. It integrates an oscillator, cycle-by-cycle current limit, thermal protection and over voltage protection, great reducing the number of external

transistor BJT 2N2222

Abstract: CTX01-15275 31353R-02 BCM3351 SI3230 BCM33XX bjt 2n2222 BCM11xx npn bjt 2N2222 FZT953
Contextual Info: Si3233 P R O SLIC P R O G R A M M A B L E CMOS SLIC W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Software Programmable SLIC with codec interface Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft

MRF426

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP