2SD2440
Abstract: No abstract text available
Text: TOSHIBA 2SD2440 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) • Low Saturation Voltage VCE(sat) = 1.2'V (MAX.) (IC = 5A , IB = 1A) • • High Speed : tf = 1 /us (TYP.) (Ic = 5 A, IB = ±0.5 A)
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2SD2440
2SD2440
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2SD2440
Abstract: No abstract text available
Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
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2SD2440
2SD2440
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 0 3 . 6 ± 0.2 ;15.8 ± 0 .5^
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2SD2440
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D2440
Abstract: 2SD2440
Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) : VEBO = 18 V • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
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2SD2440
D2440
2SD2440
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage • Low Saturation Voltage • High Speed • High DC C urren Gain VCBO = !00V MIN. V e BO = 18V (MIN.) v CE(sat) = l-2V (MAX.) (IC = 5A, I b = 1A) t f = l^ s (TYP.) d c = 5A, Iß = ± 0 .5 A )
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2SD2440
100ms)
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2SD2440
Abstract: No abstract text available
Text: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 15.810.5 , Q¡3.610.2
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2SD2440
2SD2440
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2440 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm SWITCHING APPLICATION • High Breakdown Voltage: 15 .8 ± 0 -5 ^ # 3 .6 ± 0.2 V q b o —100V MIN. 3.5 VE B 0 = 18V (MIN.) • Low Saturation Voltage VCE(sat) = l-2V (MAX.)
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2SD2440
--100V
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2SD2440
Abstract: No abstract text available
Text: TOSHIBA 2SD2440 TO SHIBA TRANSISTOR SWITCHING APPLICATION • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) Low Saturation Voltage VCE(sat) = 1-2 V (MAX.) (IC = 5A, IB = 1A) High Speed : tf = 1 f a (TYP.) (Ic = 5 A, IB = ±0.5 A)
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2SD2440
961001EAA2'
2SD2440
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Untitled
Abstract: No abstract text available
Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
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2SD2440
2-16F1A
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2SD2440
Abstract: D2440
Text: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V · Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) : VEBO = 18 V · High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)
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2SD2440
2SD2440
D2440
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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BCE0016F
2SA1941 amp circuit
2SC3303
2SD880
TO3P package
2SA114
smd transistor h2a
2sb834
amplifier circuit using 2sa1943 and 2sc5200
TOSHIBA BIPOLAR POWER TRANSISTOR
amplifier design tta1943
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transistor
Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N
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2SD1160
2SD1140
2SD1224
2SD1508
2SD1631
2SD1784
2SD2481
2SB907
2SD1222
2SD1412A
transistor
power transistor npn to-220
PNP POWER TRANSISTOR TO220
transistor PNP
damper diode
Darlington transistor
2SD2206A
power transistor
npn darlington
transistor TO220
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2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
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BCE0016A
3501C-0109
F-93561,
2sc5088 horizontal transistors
equivalent 2SC2655
2sc5858
2sC5200, 2SA1943
2sa1930 transistor equivalent
2SA1941 equivalent
2sc5570
zener diode SMD marking code 27 4F
2sc5200 audio amplifiers
smd transistor h2a
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