D04B Search Results

Contextual Info: 623Sb05 D04b572 ETO « S I E G bOE ]> I 7 = - # “0 5 SFH 482201 SIEMENS GaAIAs-LASER DIODE 250 mW SIEMENS AKTIEN6ESELLSCHAF P ackage Dimensions in mm 5.9 11.7 - Laser Mirror , 1 .0 -2 .0 7.0 1. 2. 3. 4. Peltier-Cooler+ NTC NTC Laserdiode Cathode 5. Laserdiode Anode

PPC5001T

Abstract: PQC5001T
Contextual Info: 7 - 3 3 'Q 5 PPC5001T PQC5001T P H ILIP S in t e r n a t io n a l •SbE D ■ 711002b D04bl+2E ISO IPHIN MICROWAVE POWER TRANSISTORS NPN silicon p ow er tra n sisto r fo r use in a co m m o n -co lle cto r o s c illa to r c ircu its in m ilita ry and professional applications.

Contextual Info: bOE D • 023SbOS D04bSSE 4D5 m s i E G SIEMENS SFH 4212 IRED T 0 1 8 PACKAGE rillc SIEMENS AKTIENGESELLSCHAF P a cka g e D im e n sio n s in mm FEATURES M a xim u m R atings * In G a A s P /ln P -IR E D 60 mA Forward Current DC lF .

Contextual Info: 712^237 D04b441 êST « S f i T H SCS-THOMSON iGÄ¥^@iO £S STP33N10 STP33N1OFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP33N 10 S TP33N 10FI • . . ■ ■ . . ■ V d ss RDS(on Id 100 V 100 V < 0 .0 6 £2 < 0 .0 6 n 33 A 18 A TYPICAL R D S (o n ) = 0.045 £i

IEC-134

Abstract: IEC134 transistor t4B MARKING CODE R7 RF TRANSISTOR LAE6000Q T4B marking
Contextual Info: 7^ 3 / " / ^ LAE6000Q M AINTENANC E TYPE PHILIPS INTERNATIONAL 5bE J> 711Qfi5t, D04blflQ OOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN transistor fo r common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,

HP506

Abstract: HFA-0002 HFA7-0002-5
Contextual Info: HARRIS SEPIICOND SECTOR fH blE D 430B571 D04b777 5 ^ HFA-0002 H A R R IS S E M I C O N D U C T O R Low Noise Wideband Operational Amplifier March 1993 Features Description • Wide Gain Bandwidth Product. . . . . . 1GHz • High Slew Rate .250V /H S .

Contextual Info: 7*12^237 D04bSS3 452 M SG TH SGS-THOMSON üO T ô*S STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 • . • . ■ . . V dss R d S ( o ii Id 50 V 60 V < 0 .0 1 6 Q < 0 .0 1 6 a 60 A

Contextual Info: bDE D • flEBSbOS D04b727 DIT « S I E G SIEMENS AKT IENGESELLSCHAF SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, T3Te Reverse Voltage (VR) Power Dissipation (PTO t )

Contextual Info: Philips Sem iconductors Preliminary specification NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL 1 RXB06150W SbE D • 7110fl2b D04bS42 ^ET FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium pulse applications up to

lm555 timer ic use in mobile charger

Abstract: LM2575-ADJ 12v battery charger lm317 charger on LM358 lm358 timer lm555 texas lm338 application notes lm2575adj variable voltage regulator LM317 lm358 gain formula
Contextual Info: LM3420 LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller Literature Number: SNVS116C LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller General Description The LM3420 series of controllers are monolithic integrated

26Lv31

Abstract: D01B D03A d03b D02A D04A D04B SP431
Contextual Info: SP431 High Speed, +3.3V Quad RS-422 Differential Line Driver • Compatible with the EIA standard for RS-422 serial protocol ■ Quad Differential Line Drivers ■ High-Z Output Control ■ At Least 60Mbps Transmission Rates ■ 11ns Typical Driver Propagation Delays

RXB12350Y

Contextual Info: ^ M AINTENANC E TYPE 5bE D PHILIPS INTERNATIONAL 3 3 -/3 RXB12350Y TllQflEb DDMbSMb 575 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

4N 26 TFK

Contextual Info: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

CA741CE

Abstract: GA741 CA741 CA741T CA741E CA1458 CA1458T CA741CT CA145B CA1558E
Contextual Info: HA RR IS SEMICON] S E C T O R • 43 G2 E7 1 D D 4 b 2 Q b 724 H H A S CA741, CA1458, CA1558, LM741*, LM1458*, LM1558* HARRIS SEMICONDUCTOR High Gain Single and Dual Operational Amplifiers for Military, Industrial and Commercial Applications March 1993 Features

Contextual Info: 7 ^ 2 3 7 0D4L50L4 f l t. 3 •SGTH SGS-THOMSON ¡LiOT s«S ¡5 7 STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP 50N 06L STP50N 06LFI V dss R d s ( o ii Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■ TYPICAL RDS(on) = 0.024 Q

Contextual Info: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n STP55N06L STP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L STP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q

Contextual Info: PRELIMINARY KA3030D CD PRODUCTS 6-CH MOTOR DRIVER The KA3030D is a monolithic integrated circuit, and suitable for 6-ch motor driver which drives focus actuator, tracking actuator, sled motor, spindle motor, loading motor and changer of CD system. FEATURES

Contextual Info: SipSÿ I SP486E and SP487E SIGNAL PROCESSING EXCELLENCE Enhanced Quad RS-485/RS-422 Line Drivers • ■ ■ ■ ■ ■ ■ ■ RS-485 or RS-422 Applications Quad Differential Line Drivers Driver Output Disable -7 V to +12V Common Mode Output Range 100(aA Supply Current

Contextual Info: '* * * i 7 im r r im m _ LTC487 TECHNOLOGY Q u a d Low P o w er RS485 D river F€flTUR€S D C S C R IP T IO n • ■ ■ ■ The LTC487 is a low power differential bus/line driver designed formultipoint data transmission standard RS485 applications with extended common mode range +12V to

LM338

Abstract: LM2575-ADJ lm317 pnp Transistor LM358 op amp charger on LM358 lm358 CHARGE CONTROLLER ap 474 6v BATTERY CHARGING CIRCUIT lm317 LM3420-4 LM555
Contextual Info: LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller General Description The LM3420 series of controllers are monolithic integrated circuits designed for charging and end-of-charge control for Lithium-Ion rechargeable batteries. The LM3420 is available

HD61104

Abstract: HD66840 HD66204TFL HD66204F HD66204FL lcd 66204 hitachi HD63645 HD66204 HD66204TF hcl notebook
Contextual Info: HD66204- Dot Matrix Liquid Crystal Graphic Display Column Driver with 80-Channel Outputs Description Features T he H D 66204F /H D 66204F L /H D 66204T F /H D 66204TFL, the colum n driver for a large liquid crystal graphic display, features as many as 80

Contextual Info: HARRIS SEHICOND g h a r SECTOR r b lE i s S E M I C O N D U C T O R • • • • DQ4bfl3T hh h « H A S 9 ICL76XX Series Low Power CM OS Operational Amplifiers Description Wide Operating Voltage R a n g e.±1V to ±8V The ICL761X/762X/764X series is a family of monolithic

MF0032M-04AAXX

Abstract: MF0064M-04AAXX MF0128M-04AAXX 8116-bit E5HY
Contextual Info: MITSUBISHI STORAGE CARD Preliminary CompactFlash CARDS ~~ 8116-bit Data Bus MF0032M-04AAxx MF0064M-04AAxx MF0128M-04AAxx CompactFlash Card ~ Connector Type Two-piece 50-pin y DESCRIPTION FEATURES Mitsubishi’s CompactFlash cards provide large memory capacities on a device approximately the

Contextual Info: • 3 3 -1 3 RZ2731B60W IX PH IL IP S INTERNATIONAL SbE D ■ 711GflSb OD4tiS7ö GAS H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.