CY7B16 Search Results

Contextual Info: CY7B161 CY7B162 f ' YPPI7QC! SEMICONDUCTOR Features Functional Description • U ltra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write (7B161 • BiCMOS for optimum speed/power • TTL-compatible inputs and outputs

CY7B161

Abstract: CY7B162 A10C CY7B162-15DMB
Contextual Info: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O into th e m em ory location specified on the address pins Ao through A 1 3 . Features Functional Description • Ultra high speed — 8 n s tAA • Low active power — 700 mW • Low standby power

Contextual Info: CY7B161 CY7B162 n Y p p p c q Features Functional D escription • Ultra high speed T he CY7B161 and CY 7B162 are highperform ance B iC M O S static R A M s orga­ nized as 16,384 by 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac­ tive LO W chip en ab les Cl'-i, CF-2 and

Contextual Info: — =Z1- CY7B164 CY7B166 ^ CYPRESS SEMICONDUCTOR Features • Ultra high speed — U a = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable ÖE feature (7B166) • TTL-compatible inputs and outputs

Contextual Info: C*yppucc CY7B163 Expandable 262,144 x 1 Static R/W RAM with Separate I/O ADVANCED INFORMATION SEMICONDUCTOR Features • High speed - 12 ns • Five chip enables C E |, j ,j and CE4,5 to expand memory • BiCMOS for optimum speed/power • Low active power

CY7B161-12PC

Abstract: b1615 B1616
Contextual Info: PRELIMINARY r ’V P P F Q O 16,384x4 Static RAM Separate I/O SEMICONDUCTOR Features Functional Description • High speed - 10 ns t* The CY7B161 and CY7B162 are high-performance BiCMOS static RAMs orga­ nized as 16,384 by 4 bits with separate I/O. These RAMs are developed by Aspen

7B164-15

Abstract: 910U
Contextual Info: _ PRELIM INARY SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power • High speed - 10 ns t* T he CY7B164 and CY7B166 are high-performance BiCMOS static RAMs organized as 16,384 x 4 bits. These RAMs are devel­

Contextual Info: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static RAV RAM Features Functional Description • Ultra high speed — tAA = 8 ns T h e CY7B164 an d CY 7B166 a re highp erform ance BiC M O S static R A M s org a­ nized as 16,384 x 4 bits. Easy m em ory ex­

i6612

Contextual Info: CY7B164 CY7B166 r v p p r q q SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power T h e CY7B164 and CY7B166 are high-per­ form ance BiCM O S static R A M s organized as 16,384 x 4 bits. Easy m em ory expansion

CY7B166

Abstract: CY7B164 7B164 CY7B166-12PC a13c 12LMB CY7B16 7B166 8J45
Contextual Info: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output enable OE feature (7B166)

EL36

Contextual Info: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • Ultra high speed — 8 ns tAA • Low active power — 700 mW • Low standby power — 250 mW • Transparent write 7B161 • BiCMOS for optimum speed/power

CY7B161

Contextual Info: CY7B161 CY7B162 A? I CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • Ultra high speed — 8 ns Iaa • Low active power — 700 mW • Low standby power — 250 mW • Transparent write 7B161 • BiCMOS for optimum speed/power

Contextual Info: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed T h e CY 7B164 and CY 7B166 are highperfo rm an ce B iC M O S static R A M s orga­ nized as 16,384 x 4 bits. Easy m em ory ex­ pansion is provided by an active LO W

Contextual Info: = - CY7B164 CY7B166 ^ -16,384 x 4 Static RAV RAM ¿s CYPRESS SEMICONDUCTOR Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable OE feature (7B166)

16310p

Contextual Info: CY7B163 CYPRESS SEMICONDUCTOR Expandable 256K x 1 Static R/W RAM with Separate I/O Features F u nctional D escription • High speed T he CY7B163 is a high-perform ance B iC M O S static RAM organized as 256K w ords by I bit. Easy m em ory expansion is provided five chip enables for each p art

J61-10

Contextual Info: CY7B161 CY7B162 CYPRESS SEMICONDUCTOR 16,384 x 4 Static RAM Separate I/O Features Functional Description • T h e CY7B161 and C Y 7BI62 are high-per­ form ance BiCM OS static RAM s orga­ nized as 16,384 by 4 bits with separate I/O . T hese R A M s are developed by A spen

Contextual Info: _ CY7B160 — — ^ SEMICONDUCTOR Expandable 16,384 x 4 Static RAM Features Functional Description • T h e C Y 7B 160 is a h ig h -p e rfo rm a n c e B iC M O S s ta tic R A M o rg a n iz e d as 16,348 x 4 bits. A m e m o ry ex p a n sio n fe a tu re is

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

CY62256LL-PC

Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
Contextual Info: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2

cy7c9101

Abstract: CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell
Contextual Info: Military Product Selector Guide Static RAMs Size Organization 64 64 1K 1K 4K 4K 4K 4K 4K 8K 8K 16K 16K 16K 16K 16K 16K 16K 16K 16K 32K 32K 32K 32K 32K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 256K 256K 256K 256K 256K 256K 256K 1M 1M

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

CY7B185

Abstract: CY7B922 clock buffer FITS CY7B991 CY7B992 EME-6300H SM23B CY7B991-LMB
Contextual Info: Qualification Report February, 1994 QTP# 92202&93462 Version 2.0 PROGRAMMABLE SKEWCLOCK BUFFER CY7B991 TTL CY7B992 (CMOS) QUALIFICATION REPORT February, 1994 Version 2.0 QTP # 92202/93462 PROGRAMMABLE SKEW CLOCK BUFFER CY7B991 (TTL) CY7B992 (CMOS) CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

Contextual Info: 1 | s ^ = 7 Z * e S SEMICONDUCTOR Expandable 16,384 x 4 Static RAM Features Functional Description • T h e C Y 7 B 1 6 0 is a h igh -p erform an ce B iC M O S static R A M organ ized as 16,348 x 4 bits. A m em o ry ex p a n sio n featu re is provid ed to save a ccess tim e by elim in a tin g

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability