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Rochester Electronics LLC CY10E422L-7DC IC SRAM 1KBIT PARALLEL 24SBDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY10E422L-7DC	Bulk			18	1 - 10 - 100 $17.19 1000 $17.19 10000 $17.19	Buy Now
Rochester Electronics LLC CY10E422L-7KCQ IC SRAM 1KBIT PARALLEL 24CFLATPK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY10E422L-7KCQ	Bulk			27	1 - 10 - 100 $11.38 1000 $11.38 10000 $11.38	Buy Now
Rochester Electronics LLC CY10E422L-7JCQ IC SRAM 1KBIT PARALLEL 28PLCC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY10E422L-7JCQ	Bulk			27	1 - 10 - 100 $11.38 1000 $11.38 10000 $11.38	Buy Now
Cypress Semiconductor CY10E422L-7DC CY10E422L-7DC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	CY10E422L-7DC		4,972		19	1 - 10 - 100 $19.425 1000 $17.5625 10000 $17.5625	Buy Now
Quest Components	CY10E422L-7DC		80,015			1 $17 10 $17 100 $17 1000 $8.5 10000 $8.5	Buy Now
	CY10E422L-7DC		88			1 $19.125 10 $19.125 100 $14.875 1000 $14.875 10000 $14.875	Buy Now
Rochester Electronics	CY10E422L-7DC		4,972		1	1 $16.53 10 $16.53 100 $15.54 1000 $14.05 10000 $14.05	Buy Now
Cypress Semiconductor CY10E422L-7JCQ CY10E422L-7JCQ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	CY10E422L-7JCQ		994		28	1 - 10 - 100 $12.85 1000 $11.625 10000 $11.625	Buy Now
Rochester Electronics	CY10E422L-7JCQ		994		1	1 $10.94 10 $10.94 100 $10.28 1000 $9.3 10000 $9.3	Buy Now

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CY10E422 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CY62256LL-PC Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113 Text: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2	Original	PDF	PALCE22V10-JC FLASH-FL22D CY62256LL-PC VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
CY27S03A Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability	Original	PDF	CY7C122 CY27S03A 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
CY7C9101 Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901 Text: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the	Original	PDF
Gunn Diode symbol Abstract: cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet Text: CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY APPENDIX A: FAILURE RATE CALCULATION Thermal Acceleration Factors Acceleration factors AF for thermal stresses (High Temperature Operating Life, Data Retention and High Temperature Steady State Life) are calculated from the Arrhenius equation.	Original	PDF	62x10-5 Gunn Diode symbol cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet
Untitled Abstract: No abstract text available Text: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version	OCR Scan	PDF	CY10E422 CY100E422 10KH/10K- 100K-compatible 10K/10KH CY10E422L-7LC CY10E422Lâ CY100E422â CY100E422Lâ
TR10E Abstract: CY100E422L5DC C4221 Text: CY10E422 _CY100E422 SEMCONDtCTOR • Open emitter output for ease of memory expansion Features • 256 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — tA A = 3 ns, tA B S = 2 ns — IEE = 220 mA	OCR Scan	PDF	CY10E422 CY100E422 10KH/10K 10K/10KH 100Kcompatible. CY100E422-31X' CYI00E422- CY100E422-3YC CY100E422-5YC TR10E CY100E422L5DC C4221
Untitled Abstract: No abstract text available Text: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description	OCR Scan	PDF	CY10E422 CY100E422 10KH/10K- 10K/10KH 10E422L--7LC 10E422L--7KM 100E422--3 100E422--5D
DIC20 Abstract: CY10E422L-5DMB Text: CY10E422 S i - ~ CY1 = SL- SEMICONDUCTOR Features 256 x 4 ECL Static RAM • On-chip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 256 x 4-bit organization • Ultra high speed/standard power	OCR Scan	PDF	CY10E422 CY10E422L-- 10E422L-- DIC20 CY10E422L-5DMB
CY10E422L-5KMB Abstract: CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422 CY100E422 CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422 Text: _ CY10E422 CY100E422 "-• 256 x 4 ECL Static RAM CYPRESS SEMICONDUCTOR Features — t^A ~ 3*5 ns • On-ehip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout — I e e = 220 mA	OCR Scan	PDF	CY10E422 CY100E422 10KH/10K- 10K/10KH CY100E422â 24-Lead 400-Mil) CY10E422L-5KMB CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422
Untitled Abstract: No abstract text available Text: CY10E422 CY100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion	OCR Scan	PDF	CY10E422 CY100E422 10E422L-7K 10E422L-7D 10E422L-7YM 100E422-3LC CY100E422-3Y CY100E422-3K 100E422-5LC
Untitled Abstract: No abstract text available Text: ^ ^' 3 w ' SEm!cONDUCTOR 256 x 4 ECL Static RAM The four independent active LOW block select B inputs control memory selection and allow for memory expansion and re configuration. Each block select (Bi through B 4 ), when active, turns off the cor responding output and memory block. The	OCR Scan	PDF	10KH/10K- 100K-compatibie 10K/10KH CY10E422 CY100E422 CY10E422L-- 10E422L--
IR 10e Abstract: No abstract text available Text: Preview llllìììlll I v T M DATA SHEET September 1989 M M 1 0 E422/M M 10 0 E422 256 x 4 ECL STATIC RAM FEATURES . . . 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tA A = 3 ns, tA B S = 2 ns - 1EE = 220 mA LOW POWER VERSION - tAA = 5 ns - 1EE = 150 mA	OCR Scan	PDF	KH/10 MM10E422 MM100E422 MM10E422/100E422 10E422 10E422 100E422 IR 10e
CY7C2901 Abstract: No abstract text available Text: ÌB Ìcy p ress • Table 10. Die Sizes of Cypress Devices continued P a rt N um ber Size (mil2) P a rt N um ber Size (mil2) ECL Logic CY 2909A 7968 CY100E301L 14875 CY2910A 21750 CY100E302L 14875 CY2911A 7968 CY100E422 6960 11800 CY100E474 10830 CY7C510	OCR Scan	PDF	CY100E301L CY2910A CY100E302L CY2911A CY100E422 CY100E474 CY7C510 CY100E494 CY7C516 CY10E301L CY7C2901