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    CR8PM Price and Stock

    Rochester Electronics LLC BCR8PM20LP

    TRIAC 1KV 80A
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    DigiKey BCR8PM20LP Bulk 50
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    Rochester Electronics LLC BCR8PM-12LA-A8

    TRIAC 600V 8A TO220F
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    DigiKey BCR8PM-12LA-A8 Bulk 235
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    Rochester Electronics LLC BCR8PM-12LG-B00

    TRIAC 600V 8A TO220F
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    DigiKey BCR8PM-12LG-B00 Bulk 235
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    Renesas Electronics Corporation CR8PM-12B-A8#B00

    Thyristor Medium Power Use
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    Verical CR8PM-12B-A8#B00 860 187
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    Rochester Electronics CR8PM-12B-A8#B00 887 1
    • 1 $1.71
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    Renesas Electronics Corporation BCR8PM-12LA-A8

    TRIAC, 600V , 8A
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    Rochester Electronics BCR8PM-12LA-A8 77,194 1
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    CR8PM Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CR8PM Mitsubishi THYRISTOR Original PDF
    CR8PM Renesas Technology MEDIUM POWER USE INSULATED TYPE: GLASS PASSIVATION TYPE Original PDF
    CR8PM-12 Mitsubishi Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Original PDF
    CR8PM-12 Renesas Technology Medium Power Use Insulated Type, Glass Passivation Type SCR Original PDF
    CR8PM-12 Renesas Technology Thyristor Original PDF
    CR8PM-12A Renesas Technology Thyristor: Thyristor Medi Original PDF
    CR8PM-12A-A8 Renesas Technology Thyristor: Thyristor Medium Power Use Original PDF
    CR8PM-8 Mitsubishi Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Original PDF

    CR8PM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    E223904

    Abstract: CR8PM-12 CR8PM-12A CR8PM-12A-A8
    Text: CR8PM-12 Thyristor Medium Power Use REJ03G0359-0100 Rev.1.00 Aug.20.2004 Features • • • • • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 IT AV : 8 A VDRM : 600 V IGT : 15 mA Viso : 1500 V


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    CR8PM-12 REJ03G0359-0100 E223904 E80271 O-220F E223904 CR8PM-12 CR8PM-12A CR8PM-12A-A8 PDF

    CR8PM-12A

    Abstract: CR8PM-12A-A8 PRSS0003AA-A
    Text: Preliminary Datasheet CR8PM-12A R07DS0116EJ0200 Previous: REJ03G0359-0100 Rev.2.00 Sep 13, 2010 Thyristor Medium Power Use Features •     Insulated Type  Planar Passivation Type  UL Recognized : Yellow Card No. E223904 IT (AV) : 8 A VDRM : 600 V


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    CR8PM-12A R07DS0116EJ0200 REJ03G0359-0100) E223904 PRSS0003AA-A O-220F) volt9044 CR8PM-12A CR8PM-12A-A8 PRSS0003AA-A PDF

    E80276

    Abstract: 300V switching thyristor
    Text: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR8PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING CR8PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME φ3.2±0.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 123 IT AV . 8A


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    00V/600V E80276 E80276 300V switching thyristor PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR8PM-12B R07DS0117EJ0100 Rev.1.00 Sep 03, 2010 Thyristor Medium Power Use Features •     Insulated Type  Planar Passivation Type  UL Recognized : Yellow Card No. E223904 IT AV : 8 A VDRM : 600 V IGT : 15 mA Viso : 2000 V


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    CR8PM-12B R07DS0117EJ0100 E223904 PRSS0003AA-A O-220F) R09044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR8PM-12A R07DS0116EJ0200 Previous: REJ03G0359-0100 Rev.2.00 Sep 13, 2010 Thyristor Medium Power Use Features •     Insulated Type  Planar Passivation Type  UL Recognized : Yellow Card No. E223904 IT (AV) : 8 A VDRM : 600 V


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    CR8PM-12A R07DS0116EJ0200 REJ03G0359-0100) E223904 PRSS0003AA-A O-220F) volta9044 PDF

    E80276

    Abstract: cr8pm LU13
    Text: MITSUBISHI SEMICONDUCTOR THYRISTOR CR8PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE CR8PM It ( V d r m . 400V/600V


    OCR Scan
    00V/600V E80276 O-22QF E80276 cr8pm LU13 PDF

    PRSS0003AA-A

    Abstract: No abstract text available
    Text: Preliminary Datasheet CR8PM-12B R07DS0117EJ0100 Rev.1.00 Sep 03, 2010 Thyristor Medium Power Use Features •     Insulated Type  Planar Passivation Type  UL Recognized : Yellow Card No. E223904 IT AV : 8 A VDRM : 600 V IGT : 15 mA Viso : 2000 V


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    CR8PM-12B R07DS0117EJ0100 E223904 PRSS0003AA-A O-220F) R07DS0117EJ0100 PRSS0003AA-A PDF

    cr3am-8

    Abstract: CR10C-8 CR10C8 CR3AM CR02AM-4 CR5AS8 CR8PM-8 CR20F8 CR08AS8 thyristor tt 86 n
    Text: • L O W AND MEDIUM POWER FOR GENERAL USE Max. ratings Average ftapeMtivepMkr»xraewit«ae,Rifieti6« peak-off-»tese V rhk, V drm M Type No. CR02AM-4. 6. 8 Electrical characteristics Critical rate- Junction Critical rateof-rise of offon-current of-ose o! ern­ inperatun


    OCR Scan
    CR12BM-8, fO-220 CR02AM-8A cr3am-8 CR10C-8 CR10C8 CR3AM CR02AM-4 CR5AS8 CR8PM-8 CR20F8 CR08AS8 thyristor tt 86 n PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


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    R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


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    2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    E80276

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


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    REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


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    REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


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    24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as PDF

    BTA136

    Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
    Text: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any


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    05NH45 05NH46 05NU41 05NU42 0R8GU41 5KA10 5KA10A 5KA11 5KA11A 5KA12 BTA136 ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207 PDF