C25 21 Search Results

Contextual Info: KELCO C25 INLINE FLOW SWITCH High performance 25mm inline flow switches with advanced features make the C25 an ideal choice for many system designers. FEATURES One piece brass body All position mounting Diesel and oil models available Choice of two electrical modules

MIXA81WB1200TEH

Contextual Info: MIXA81WB1200TEH tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = 290 A I C25 90 A I C25 = I FSM = 1200 A VCE sat = = 120 A 1.8 V VCE(sat) = 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC

32N60BU1

Abstract: 32N60B h32n60b e5200 32N60BU
Contextual Info: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C

Contextual Info: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC

ASN100

Abstract: IXSH45N100 bv 1500 sts
Contextual Info: Low VCE sat IGBT IXSH/IXSM 45N100 V CES ^C25 v CE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES ^ Vco„ Td = 25°C to 150°C; RGE = 1 Mi2 = 25°C to 150°C V0ES VGEM ^C25 1000 V 1000 V Continuous ±20

9V bridge rectifier ic

Abstract: MIXA81WB1200TEH
Contextual Info: MIXA81WB1200TEH tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = 290 A I C25 90 A I C25 = I FSM = 1200 A VCE sat = = 120 A 1.8 V VCE(sat) = 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC

igbt to247

Abstract: s9011 IXGH24N60AU1S ixgh24N60
Contextual Info: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25

IC2560

Abstract: thyristor module 700a NTC-10 ohm MIXA60WH1200TEH
Contextual Info: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC

Contextual Info: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1200 V VCES = 600 V VCES = 650 V I DAV = 119 A I C25 I FSM = 360 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number

Contextual Info: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 600 V VCES = 650 V I DAV = 139 A I C25 I FSM = 550 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number

D65VML

Abstract: D65CEK1C5A C25DRJ350 S811V XTMC6A01 0A95 diode C25DND325 XTMF9A00
Contextual Info: Motor Control and Protection Contactors 2.1 Contactors Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Compact Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . . . . 50 mm C25 Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . .

40N30BD1

Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o

32N60BU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C

Contextual Info: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25

G20N60

Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Contextual Info: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48

32N50

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

1XGH24N60A

Abstract: b236 b237 TXYS IXGH/24N60A
Contextual Info: inixYS HiPerFAST IGBT V CES IXGH 24N60A ^C25 v * CE sat l fi Symbol Test Conditions 4 Maximum Ratings VCES Tj = 25°C to 150°C 600 VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES v GEM Continuous ±20 V T ransient ±30 V ^C25 Tc -2 5«C 48 A ^090 Tc =90°C

Contextual Info: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C

60N60

Abstract: G 60N60
Contextual Info: ID1XYS Ultra-Low VCE sat IGBT IXGH 60N60 v v CES ^C25 Symbol Test Conditions Maximum Ratings v*C E S v CGR Tj = 25°C to 150°C 600 V ^ = 25DC to 150°C; RGE = 1 M£2 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C, limited by leads 75

Contextual Info: nixYS HiPerFAST IGBT with Diode IXGH 32N50BU1 V CES ^C25 V CE sat t rfi Symbol Test Conditions VCES VCGR T, =25°Cto150°C 500 V Tj = 25eC to 150° C; RGE= 1 MQ 500 V VGES VGEM Continuous 120 V Transient ¿30 V ^C25 Tc = 25° C ^C90 Tc =90° C ^CM Tc = 25° C, 1 ms

Contextual Info: P1XYS HiPerFAST IGBT with Diode IXGK 50N60AU1 v CES ^C25 v ¥ CE sat tfi Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V v COR v GES T, = 25°C to 150°C; RGE = 1 MQ 600 V Continuous ±20 V vyoem T ransient ±30 V ^C25 Tc = 25°C, limited by leads

Contextual Info: IXGH 38N60U1 Ultra-Low VCE sat IGBT with Diode Symbol ^C25 v Maximum Ratings Test Conditions VCES ^ 600 V VCGB Td = 25°C to 150°C; RGE = 1 M il 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A 152 A ' cm = 25°C to 150°C

ixgk32n60

Contextual Info: ÎXYS HiPerFAST IGBT IXGH 32N60A 1XGH 32N60AS CES ^C25 v CE sat t,i Symbol Test Conditions v CES T j = 25°C to 150°C v CGR T j = 25°C to 150°C; RGE = 1 M il 600 V Continuous ±20 V V* GEM Transient ±30 V ^C25 Tc = 25°C 60 A Tc = 90°C 32 A ^CM Tc = 25“C, 1 ms