4B6B22B Search Results

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

Contextual Info: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C

MCC 40 -12io8

Abstract: MCC 90 16io8 MCC 90 12io8 MCC 40 -14io8 MCC 90 14io8 MCC44-06IO1 Thyristor mcc MCC44
Contextual Info: 4 bE D • 4 böb 5 Eb OOOllflO ^ ■ IXY I X Y S CORP EIIXYS 500 700 900 1300 1500 1700 i Type 400 600 800 1200 1400 1600 Version 1 Version 8 Version 8 MCC44-06io1 MCC44-08k>1 MCC44-12k>1 MCC44-14io1 MCC44-16Î01 MCC44-06ÌO8 MCC44-08ÎO8 MCC44-12io8 MCC44-14io8

2675000101

Abstract: 6B40 bridge diode IXBD4410PC schematic diagram inverter 12v to 5v 30a ic driver mosfet 8 pin 4413 ic 4410 8pin schematic diagram 24v UPS 1XBD4410 schematic diagram inverter 24V to 12v 30a schematic diagram welding inverter full bridge
Contextual Info: 4bE D • I MbôbEEb 000105Ö 1 H IX Y X Y S CORP □IX Y S PRELIMINARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V or Greater Low- to High-Side Isolation.

IS1540

Abstract: C150 ixys st 380-02F
Contextual Info: 3i,;i •■ MegaMOS FET Module IC1f*tipï*''irt'ï: VMO 380-02 F VDSS = 200 V = 385 A D25 RDS on = 4.6 m fì N-Channel Enhancement Mode Preliminary data 2 Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C 200 V vDGR Tj = 25°C to 150°C; Res = 10 kD

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

Contextual Info: □IXYS Diode Modules V ’ RSM V RRM 900 1300 1500 1700 1900 ^FRMS ^FAVM MDD MDD MDD MDD MDD "^"vj — ^~VJM VR= 0 Ji2dt L- H 95-08N1 B 95-12N1 B 95-14N1B 95-16N1B 95-18N1B * TVJ = 45° C VR= 0 TVj — VR= 0 t t t t = = = = 10 ms 8.3 ms 10 ms 8.3 ms 50 (60

50N20

Abstract: 42N20 IXTH42N20
Contextual Info: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200

D-6840

Abstract: transistor BD 441 IXBD 4413 efu dual mosfet POB11SO BD4410PI 4410PI ixys vco 52 full bridge igbt induction heating generator 2675000101
Contextual Info: 4bE D • Mb ô b E E b I X Y S 000105Ö 1 H IX Y CORP □IXYS T ’- S Z . H V ^ O PRELIM INARY INFORMATION* Data Sheet No. 91503A October 1991 ISOSMART HALF BRIDGE DRIVER CHIPSETS IXBD4410 / IXBD4411 / IXBD4412 / IXBD4413 Features 1200V o r Greater Low- to High-Side Isolation.

IXSE502PC

Abstract: Hearing Aid ARM processor based Circuit Diagram IXSE502 DOWN COUNTER using 8051 flow chart for automatic control of three phase motor using 8051 ic circuit diagram of digital hearing aid incremental shaft encoder 8086 microcomputer quadrature shaft decoder D-6840
Contextual Info: 4bE D • MböbEEb □□Gill? E BIIXY I X Y S CORP T ‘5 * ^ 3 ' O S □IXYS PRELIMINARY INFORMATION D atasheet No. 915502A October 1991 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 / IXSE503 Features Direct 2 channel Quadrature Inputs with Schmitt Trigger Circuitry

1XFH12n100

Abstract: transistor 13n80
Contextual Info: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure

Contextual Info: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1