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IXYS Corporation IXGH24N60C IGBT 600V 48A TO-247AD
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DigiKey	IXGH24N60C	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH24N60A IGBT 600V 48A TO-247AD
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IXYS Corporation IXGH24N60B IGBT 600V 48A TO-247AD
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IXYS Corporation IXGH24N60C4 IGBT PT 600V 56A TO-247AD
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DigiKey	IXGH24N60C4	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH24N60AU1 IGBT 600V 48A TO-247AD
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DigiKey	IXGH24N60AU1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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IXGH24N60 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
IXGH24N60A	IXYS	Hiperfast IGBT	Original	PDF
IXGH24N60AU1	IXYS	Hiperfast IGBT With Diode	Original	PDF
IXGH24N60AU1S	IXYS	HiPerFAST IGBT with Diode	Original	PDF
IXGH24N60B	IXYS	500V HiPerFAST IGBT	Original	PDF
IXGH 24N60BU1	IXYS	TRANS IGBT CHIP N-CH 600V 48A 3TO-247 AD	Original	PDF
IXGH24N60BU1	IXYS	Hiperfast IGBT With Diode	Original	PDF
IXGH24N60C	IXYS	HiPerFAST IGBT Lightspeed Series	Original	PDF
IXGH24N60C4	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247	Original	PDF
IXGH24N60C4D1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247	Original	PDF
IXGH24N60CD1	IXYS	600V HiPerFAST IGBT with diode	Original	PDF

IXGH24N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
24N60 Abstract: IXGH24N50B IXGH24N60B Text: HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	IXGH24N50B IXGH24N60B 24N50 24N60 O-247 IXGH24N60B	PDF
c2548 Abstract: IXGH24N50BU1 IXGH24N60BU1 Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera10 IXGH24N50BU1 c2548 IXGH24N60BU1	PDF
W2515 Abstract: IXGH24N50BU1 IXGH24N60BU1 Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera000 IXGH24N50BU1 W2515 IXGH24N60BU1	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information High-Gain IGBTs VCES IC110 VCE sat tfi(typ) IXGP24N60C4 IXGH24N60C4 High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGP24N60C4 IXGH24N60C4 O-220AB 338B2	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGP24N60C4 IXGH24N60C4 IC110 O-220AB O-247 338B2	PDF
IXGH24N60C4D1 Abstract: 24N60C4D1 G24N60 Text: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM	Original	IXGH24N60C4D1 IC110 O-247 IF110 24N60C4D1 IXGH24N60C4D1 G24N60	PDF
IC110 Abstract: IXGH24N60C4 IXGP24N60C4 Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGP24N60C4 IXGH24N60C4 IC110 O-220AB 338B2 IC110 IXGH24N60C4 IXGP24N60C4	PDF
IXGH24N60C4D1 Abstract: IF110 Text: Advance Technical Information High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGH24N60C4D1 IC110 O-247 IF110 338B2 IXGH24N60C4D1 IF110	PDF
IXGH24N60C4 Abstract: IXGP24N60C4 Text: Advance Technical Information IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR	Original	IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 IC110 O-263 O-220 338B2 IXGH24N60C4 IXGP24N60C4	PDF
24N60 Abstract: IXGH24N60B 24N5 IXGH24N50B 24N50 Text: HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES T J = 25°C to 150°C 500 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	IXGH24N50B IXGH24N60B 24N50 O-247 24N60 frequenc15 24N60 IXGH24N60B 24N5 IXGH24N50B 24N50	PDF
24N60C4D1 Abstract: G24N60 Text: High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGH24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM	Original	IC110 IXGH24N60C4D1 O-247 IF110 24N60C4D1 G24N60	PDF
IXGH24N60B Abstract: RG10 Text: HiPerFASTTM IGBT IXGH 24N60B VCES IC25 VCE sat tfi = = = = 600 48 2.3 80 V A V ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	24N60B O-247 728B1 IXGH24N60B RG10	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
diode DSDI 9 Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B	OCR Scan	O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A	PDF

smd diode JC 0p Abstract: DIODE SMD GEM IXGH24N60AU1S Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600	OCR Scan	24N60AU1 IXGH24N60AU1S O-247 24N60AU1S) 24N60AU1S D94006DE, smd diode JC 0p DIODE SMD GEM IXGH24N60AU1S	PDF
GEM X 365 Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd Text: Prelim inary data HiPerFAST IGBT IXGH24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ	OCR Scan	IXGH24N50B IXGH24N60B O-247 24N50 24N60 GEM X 365 24N60 zr smd	PDF
.24n50 Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1 Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24NBU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C	OCR Scan	IXGH24N50BU1 IXGH24N60BU1 T0-247 24N50 24N60 .24n50 xgh2 IXGH24N60BU1	PDF
24N50 Abstract: IXGH24N50B IXGH24N60B Text: HiPerFAST IGBT V CES IXGH24N50B/S IXGH24N60B/S Maximum Ratings Symbol Test Conditions Vces Tj = 25°C to 150°C 500 600 V v CGfl Tj = 25°C to 150°C; Rge = 1 M fi 500 600 V v GES C ontinuous ±20 V v GEM T ransient ±30 V 'c25 T c = 25°C 48 A 'c90 T c = 90°C	OCR Scan	IXGH24N50B/S IXGH24N60B/S 24N50 24N60 O-247 IXGH24N50B IXGH24N60B	PDF
IXGH24N60BU1 Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1 Text: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600	OCR Scan	IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 24N50 HIPERFAST IGBT WITH DIODE 24N60	PDF
24N60 Abstract: IXGH24N50B IXGH24N60B ixgh24N60 Text: Preliminary data HiPerFAST IGBT IXGH24N50B IXGH24N60B VoES 'c 25\| V CE(sat t« 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns T0-247 SMD (24N*BS) f C (TAB) < Symbol Test C onditions > Maximum Ratings v CES Td = 25°C to 150°C VC3R T.J = 25°C to 150°C; RbE = 1	OCR Scan	IXGH24N50B IXGH24N60B T0-247 24N50 24N60 O-247 IXGH24N50B IXGH24N60B ixgh24N60	PDF
24N60 Abstract: IXGH24N60BU1 Text: □IXYS HiPerFAST IGBT w i t h Diode Combi Pack ix g h 2 4 n sobui IXGH24N60BU1 v CES ^C 25 V* CE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns P re lim in a ry d a ta Symbol Test Conditions Maximum Ratings 24N50 24N60 G = Gate, C = Collector, E = Emitter,	OCR Scan	IXGH24N60BU1 24N50 24N60 O-247 IXGH24N60BU1	PDF
igbt to247 Abstract: s9011 IXGH24N60AU1S ixgh24N60 Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25	OCR Scan	IXGH24N60AU1 IXGH24N60AU1S T0-247 24N60AU1S) O-247 24N60AU1 B2-41 1XGH24N68AU1 W6H24WWMMl 24N80AU1 igbt to247 s9011 IXGH24N60AU1S ixgh24N60	PDF
e5200 Abstract: IXGH24N50B IXGH24N60B Text: OIXYS V CES ^C 25 V CE(sat) 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns HiPerFAST IGBT IXGH24N50B IXGH24N60B Preliminary data Symbol TO-247 AD Test Conditions Maximum Ratings 24N50 24N60 V CES T j = 25°C to 150°C 500 600 V V CGR T,J = 25°C to 150°C; F be	OCR Scan	IXGH24N50B IXGH24N60B O-247 24N50 24N60 e5200 IXGH24N60B	PDF
931 diode smd Abstract: g20n60 Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient	OCR Scan	24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1 IXGH24N60AU1S 4bflb22t. 931 diode smd g20n60	PDF

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IXGH24N60 Price and Stock

IXYS Corporation IXGH24N60C

IXYS Corporation IXGH24N60A

IXYS Corporation IXGH24N60B

IXYS Corporation IXGH24N60C4

IXYS Corporation IXGH24N60AU1

IXGH24N60 Datasheets (10)

IXGH24N60 Datasheets Context Search

24N60

c2548

W2515

Untitled

Untitled

IXGH24N60C4D1

IC110

IXGH24N60C4D1

IXGH24N60C4

24N60

24N60C4D1

IXGH24N60B

STR-G6551

diode DSDI 9

smd diode JC 0p

GEM X 365

.24n50

24N50

IXGH24N60BU1

24N60

24N60

igbt to247

e5200

931 diode smd