C 2944 TRANSISTOR Search Results

C 2944 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

C 2944 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N2007 Abstract: 2N3401 2n2002 transistors 2n 945 2sc 1919 2N2337 2N2003 2N945 2N1917 2N2944 Text: small signal transistors 69 SILICON CHOPPER TRANSISTORS TO-18 TO-5 NUMBERS NUMBERS RATED BREAKDOWN VOLTAGES Vca I VCE I VES VEC OFS r ec(on) I Max. I. (Ohms) (rnA) Max. (mV) Is i(,uA) -1.5 -2.5 -1.0 -3.0 -10 -1.0 -2.S -1.5 -3.5 -2.0 -3.0 -1.0 -3.5 -2.0 -3.5	Original		PDF
S 9018 H 331 transistor Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO Collector Emitter Voltage	Original	C-120 CD9018Rev060901 S 9018 H 331 transistor	PDF
S 9018 H 331 transistor Abstract: S 9018 H 331 S 9018 to-92 transistor c 9018 S 9018 g 331 transistor 9018 NPN 9018 60MHZ CD9018E CD9018F Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL	Original	C-120 CD9018Rev060901 S 9018 H 331 transistor S 9018 H 331 S 9018 to-92 transistor c 9018 S 9018 g 331 transistor 9018 NPN 9018 60MHZ CD9018E CD9018F	PDF
S 9018 H 331 transistor Abstract: transistor c 9018 S 9018 H 331 9018 equivalent of 9018 transistor 60MHZ CD9018D CD9018E CD9018F transistor 9018 NPN Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CD 9018 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO Collector Emitter Voltage	Original	C-120 CD9018Rev060901 S 9018 H 331 transistor transistor c 9018 S 9018 H 331 9018 equivalent of 9018 transistor 60MHZ CD9018D CD9018E CD9018F transistor 9018 NPN	PDF
CD9011 Abstract: No abstract text available Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage	Original	CD9011 100uA, C-120 CD9011	PDF
CD9011 Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Power Dissipation	Original	CD9011 100uA, C-120 CD9011	PDF
CD9011 Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Power Dissipation Operating And Storage Junction	Original	ISO/TS16949 CD9011 100uA, C-120 CD9011	PDF
TRANSISTOR J 5804 Abstract: j 5804 transistor j 5804 8205 A mosfet transistor 5910 6811 brushless pwm ac chopper 8205 dual mosfet BIT 3195 TMIS-3185/480/3P Text: TABLE OF CONTENTS General Information . page 2 Product Selection Guides • ■ ■ ■ ■ ■ ■ ■ Power Sink Drivers . 3	Original		PDF
BIT 3195 G Abstract: TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ Text: Allegro MicroSystems Fax-on-Demand: 1-888-286-9288 Outside North America: 1-202-216-1827 ICs and PMCMs PRODUCT INDEX in NUMERICAL ORDER Part Number* Description 8932-A 8958 Motor Drivers Quad, 1.8 A, 50 V Darlington Power Driver Quad, 1.8 A, 50 V Darlington Power Driver	Original	932-A BIT 3195 G TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ	PDF
TRANSISTOR J 5804 Abstract: 3240C SLA40 motor driver full bridge 5A motor driver full bridge 6A pwm ac chopper j 5804 transistor Shortform Transistor Guide Text: TABLE OF CONTENTS General Information . page 2 Product Selection Guides • ■ ■ ■ ■ ■ ■ ■ Power Sink Drivers . 3	Original		PDF
2n2946 Abstract: 2945A 2N2944 Text: TYPES 2N2944, 2N2945, 2N2946. 2N2944A, 2N2945A, 2N2946A P-N-P SILICON TRANSISTORS B U L L E T I N NO. OL- S 6 7 9 5 6 1 . MARCH 19 67 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Guaranteed Offset Voltage • High Emitter-Base Breakdown Voltage	OCR Scan	2N2944, 2N2945, 2N2946. 2N2944A, 2N2945A, 2N2946A 2N2944A) 2N2432A 2N2945 2n2946 2945A 2N2944	PDF
C 2944 transistor Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC ^3 D • 05014330 000373=1 1 ■ ALGR T-91-01 PROCESS VRB Process VRB NPN Small-Signal Transistor Process VRB is an NPN double-diffused silicon epitaxial planar transistor designed for generalpurpose amplifier and switching circuits.	OCR Scan	05D433S T-91-01 T-9U01 -H08J C 2944 transistor	PDF
2n3910 Abstract: 2N3914 2n3219 2N4260 2N2708 2N3218 2N4209 2N915 2N2004 2N2333 Text: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß m A/m A mV — 2.0 rd@l B mA Ohms Cob mA Package pF M ax 2N 943	OCR Scan	2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A 2N2865 2n3910 2N3914 2n3219 2N4260 2N2708 2N3218 2N4209 2N915	PDF
BT2222A Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929 Text: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.	OCR Scan	BT929 2N929 BT930 2N930 BT2483 2N2483 BT2484 2N24B4 BT2604 2N2604 BT2222A BT2222 2N2222 BT3501 BT51 2N2708 2N2944	PDF

2N4007 Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent Text: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)	OCR Scan	2N3440 O-450 BC108A BC108B BC108C BC109B BC109C BC110 BC177A BC177B 2N4007 BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent	PDF
SY 360 05 Abstract: BT2222A 2n22 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns	OCR Scan	2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 SY 360 05 BT2222A 2n22	PDF
2N3134 Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A Text: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A	OCR Scan	2N3134 2N3135 2N3136 2N3250 2N3250A 2M3251 2N3251A BT2946 2N2946 BT3999 2N3299 2N3300 2N3302 BT2907A	PDF
2N1026 Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF	OCR Scan	2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 2N1026 2N1025 2N2708	PDF
2sd 4242 Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383 Text: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57	OCR Scan	B1532 7S0916 2SD2431 1300M I200E I200ZP 2sd 4242 c 3866 2SC4977 C3866 c 4242 c3505 C2656 I50F C4383	PDF
2n3219 Abstract: 2N4260 RAYTHEON 2N3635 2N2004 2N2708 2N3910 2N3960 2N4261 2N915 2N2333 Text: Discrete Devices Transistors Cont. Choppers M axim um Ratings Polarity PD Ambient h f e @ >c VCE V e B Volts Volts Min/Max m A II Type Electrical Characteristics @ 25° C V c E (S a t) @ Volts m A/m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF M ax 2N 943	OCR Scan	2N943 T0-18 2N2004 2N2333 2N2944 2N2945 2N2945A 2N2946 2N2946A BT2946 2n3219 2N4260 RAYTHEON 2N3635 2N2708 2N3910 2N3960 2N4261 2N915	PDF
2N3053 NPN transistor Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE	OCR Scan	2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 BT2946 2N2946 2N3053 NPN transistor BT2222A 2N22 BT2222	PDF
NPN transistor 2n2222A plastic package to116 Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467 Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package	OCR Scan	SP3763Q0 sp3763qf O-116 SP3725QDB SP34G7ADB O-116 BT2946 2N2946 BT3999 NPN transistor 2n2222A plastic package to116 BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467	PDF
NPN transistor 2n2222A Abstract: 2N2708 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220 Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF Max	OCR Scan	2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A BT2946 2N2946 BT3999 NPN transistor 2n2222A 2N2708 2N2219 2N2219A 2N2220	PDF
MMBR911L Abstract: MPS911 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M PS911 M M B R 911L NPN Silicon High Frequency Transistors . . d e sig ned for lo w noise, w id e d y n a m ic ran g e front-end am p lifiers and low -noise V C O ’s. A v a ila b le in a surface-m oun table plastic package, as w ell as the popular	OCR Scan	PS911 O-226AA A/500 MMBR911L MPS911	PDF

C 2944 TRANSISTOR Search Results

C 2944 TRANSISTOR Result Highlights (5)

C 2944 TRANSISTOR Datasheets Context Search

2N2007

S 9018 H 331 transistor

S 9018 H 331 transistor

S 9018 H 331 transistor

CD9011

CD9011

CD9011

TRANSISTOR J 5804

BIT 3195 G

TRANSISTOR J 5804

2n2946

C 2944 transistor

2n3910

BT2222A

2N4007

SY 360 05

2N3134

2N1026

2sd 4242

2n3219

2N3053 NPN transistor

NPN transistor 2n2222A plastic package to116

NPN transistor 2n2222A

MMBR911L