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    BS170 MOTOROLA Search Results

    BS170 MOTOROLA Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
    AS8397- Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
    ND9BS1700 Amphenol Communications Solutions ix Industrial, Input output connectors, Receptacle, Type B RA Flag Style, SMT, Palladium-Nickel Gold Visit Amphenol Communications Solutions

    BS170 MOTOROLA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BS170 MOTOROLA

    Abstract: us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola
    Text: MOTOROLA Order this document by BS170/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs


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    PDF BS170/D BS170 226AA) BS170 MOTOROLA us602 equivalent of BS170 us-602 BS170 FET small signal transistors motorola

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


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    PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    s72 sot 23

    Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
    Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA


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    PDF BS870 2N7002 OT-23 BS850 22N7002 BS170 s72 sot 23 transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 transistor s72 S72 Transistor

    BB509

    Abstract: Varicap bb112 elektor receiver sfr455j ELEKTOR PE1GIC general coverage receiver varicap bb509 ssb receiver elektor NE602 application note TCA440 12V Fixed-Voltage Regulator 7812
    Text: RADIO, TELEVISION & VIDEO general-coverage receiver part 1: circuit descriptions This twopart article describes an AM/FM/SSB receiver for the frequency range 0.15 – 32 MHz, which is generally but incorrectly referred to as ‘the shortwave bands’. The receiver is microprocessor controlled


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    PDF 12-key BB509 Varicap bb112 elektor receiver sfr455j ELEKTOR PE1GIC general coverage receiver varicap bb509 ssb receiver elektor NE602 application note TCA440 12V Fixed-Voltage Regulator 7812

    MC7812

    Abstract: MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 MJL16218
    Text: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES


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    PDF MJL16218/D MJL16218* MJL16218 MC7812 MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337

    MJ11016 equivalent

    Abstract: ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MC7812 equivalent MJL16218 MOTOROLA POWER TRANSISTOR 2N6191
    Text: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES


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    PDF MJL16218/D MJL16218* MJL16218 MJL16218 MJ11016 equivalent ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MC7812 equivalent MOTOROLA POWER TRANSISTOR 2N6191

    pk mur460

    Abstract: MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJE16204 MJF16204
    Text: MOTOROLA Order this document by MJE16204/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204/D MJE16204 MJE16204 MJE16204/D* pk mur460 MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJF16204

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    BS170 MOTOROLA

    Abstract: MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


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    PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* BS170 MOTOROLA MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


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    PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004

    527 MOSFET TRANSISTOR motorola

    Abstract: Motorola Bipolar Power Transistor Data MBR28045 M0C8101 etd39 core type smps transformer design SMPS CIRCUIT DIAGRAM USING bipolar TRANSISTORS MC7815T SMPS CIRCUIT DIAGRAM USING TRANSISTORS 1200 volt 200 ampere MOSFET chopper transformer winding
    Text: Order this document by AN1320/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1320 300 Watt, 100 kHz Converter Utilizes Economical Bipolar Planar Power Transistors Prepared by: Michaël Bairanzade Power Products Application Engineer Motorola Toulouse, France Edited By: Jack Takesuye


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    PDF AN1320/D AN1320 1000negligent AN1320/D* 527 MOSFET TRANSISTOR motorola Motorola Bipolar Power Transistor Data MBR28045 M0C8101 etd39 core type smps transformer design SMPS CIRCUIT DIAGRAM USING bipolar TRANSISTORS MC7815T SMPS CIRCUIT DIAGRAM USING TRANSISTORS 1200 volt 200 ampere MOSFET chopper transformer winding

    circuit diagram of mosfet based smps power supply

    Abstract: MJW18010 MBR28045 MC7815T mr506 equivalent Full-bridge LLC resonant converter MPSW44 Motorola Bipolar Power Transistor Data m0c8101 MBR28045V
    Text: AN1320/D 300−Watt, 100−kHz Converter Utilizes Economical Bipolar Planar Power Transistors http://onsemi.com Prepared by: Michaël Bairanzade Power Products Application Engineer Motorola Toulouse, France Edited By: APPLICATION NOTE Jack Takesuye Discrete Strategic Marketing


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    PDF AN1320/D 300-Watt, 100-kHz r14525 circuit diagram of mosfet based smps power supply MJW18010 MBR28045 MC7815T mr506 equivalent Full-bridge LLC resonant converter MPSW44 Motorola Bipolar Power Transistor Data m0c8101 MBR28045V

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching N -Channel — Enhancement BS170 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating D ra in -S o u rce Voltage G ate-S ource Voltage — Continuous — Non-repetitive tp < 50 pis Drain CurrentO) Total Device Dissipation @ Ta = 25“C


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    PDF BS170 O-226AA)

    BS170

    Abstract: bs 170
    Text: BS170* CASE 29-04, STYLE 30 TO-92 TO-226AA 1 Drain MAXIMUM RATINGS Rating Sym bol V a lue U n it Vd s 60 Vdc Vg S V GSM ±20 ±40 Vdc Vpk Id 0.5 Ado Pd 350 mW TJ> T stg - 5 5 to + 1 5 0 *C D rain-S ource V o ltage G ate-S ource V oltage — C o ntin u o u s


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    PDF BS170* O-226AA) BS170 bs 170

    BS170 MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BS17Q/D SEMICONDUCTOR TECHNICAL DATA TM OS FET S w itching N -C h a n n e l — E nhancem en t 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 |xs


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    PDF BS17Q/D BS170/D BS170 MOTOROLA

    transistor MOSFET BS170

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR 60 VO LTS This TM O S FET is d esig ne d fo r h ig h -vo lta g e , h igh-speed s w itc h ­ ing a p p lica tio n s such as line d rive rs, relay d rive rs, CMOS logic,


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    PDF BS170 transistor MOSFET BS170

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching N-Channel — Enhancement 1 DRAIN î GATE 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetltive tp < 50 ja s Symbol Value Unit Vd S 60 Vdc VGS


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    PDF 15Vdc, BS170

    BS107A

    Abstract: BS170 MOTOROLA BS107 BS170 S140
    Text: BS107,A* CASE 29-04, STYLE 30 TO-92 TO-226AA 1 Drain MAXIMUM RATINGS Rating Sym bol Value Unit Vos 200 Vdc VGS VG S M ±20 ±30 Vdc Vpk Id ¡DM 250 500 mAdc Pd 350 mW TMOS SW ITCHING - 5 5 to 150 •c N-CH ANNEL — EN H A N C EM EN T Draln-Source Voltage


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    PDF BS107 O-226AA) BS107A BS170 MOTOROLA BS170 S140

    Untitled

    Abstract: No abstract text available
    Text: M A X IM U M RA TIN G S Rating Symbol Value Unit V o ss 60 Vdc V DGR 60 Vdc VG S vg sm ±20 ±40 Vdc Vpk Id 'D M 190 1000 PO 400 3.2 mW mW/°C Tj. T Stg - 55 to + 150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R&j a 312.5 °C/W


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    PDF VN0610LL* O-226AA)

    MFE9200

    Abstract: BS107 MOTOROLA BS170 MOTOROLA MPF4150 IRFF9110 IRFF9111 IRFF9112 IRFF9113 IRFF9120 IRFF9121
    Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) VGS (t/h) 0n rds (on) @ ID •d s s V(BH)DSS ■g s s C |S S ^rss •on •off n Max (A) Min Max //A Max (V) Min (nA) Max (pf) Max (pf) Max (ns) Max (ns) Max IRFF9110 IRFF9111 IRFF9112 IRFF9113


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    PDF IRFF9110 IRFF9111 IRFF9112 IRFF9113 IRFF9120 IRFF9121 IRFF9122 IRFF9123 IRFF9130 IRFF9131 MFE9200 BS107 MOTOROLA BS170 MOTOROLA MPF4150

    Untitled

    Abstract: No abstract text available
    Text: R a tin g D ra in -S o u rce V o lta g e G a te -S o u rc e V olta g e — C o n tin u o u s - N o n-re p e titive tp $ 50 fis Sym bol V a lu e U n it V Ds 60 Vdc Vg S VG SM ±20 ±40 V dc V pk D rain Current(1) 'd 0.5 A de Total D evice D issip a tio n (w T/\ = 25°C


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    PDF BS170

    TP10N10M

    Abstract: sensefet MTP10N10M TL431 motorola W. Schultz 21212T4 CI4049
    Text: LOSSLESS CURRENT SENSING WITH SENSEFETs ENHANCES MOTOR DRIVE by Warren Schultz Motorola Semiconductors Products Sector Phoenix, Arizona llM Illllllilllli^ lM MMI^BII^^^llllÉM lllllllllW lllll^l Reprinted with permission of POWERCONVERSION & INTELLIGENT MOTION, April 1986 Issue. 1986 intertec


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    PDF ------------AR160/D AR160/D 21212T-4 TP10N10M sensefet MTP10N10M TL431 motorola W. Schultz 21212T4 CI4049

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


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    PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


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    PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50