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    ND9BS1700 Amphenol Communications Solutions ix Industrial, Input output connectors, Receptacle, Type B RA Flag Style, SMT, Palladium-Nickel Gold Visit Amphenol Communications Solutions
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    BS17 Price and Stock

    onsemi BS170-D74Z

    MOSFET N-CH 60V 500MA TO92-3
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    DigiKey BS170-D74Z Cut Tape 10,625 1
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    onsemi BS170-D27Z

    MOSFET N-CH 60V 500MA TO92-3
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    Diodes Incorporated BS170P

    MOSFET N-CH 60V 270MA TO92-3
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    DigiKey BS170P Bulk 1,945 1
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    Essentra Components RBS-17

    BUMPER CYLIN 0.878" DIA CLR
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    Haesung Optics Co Ltd ABS-175R1

    ESUN ABS (1.75MM,1000G)RED
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    BS17 Datasheets (105)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS170 Diodes Incorporated N-CHANNEL ENHANCEMENT MODE TRANSISTOR Original PDF
    BS170 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor; Package: TO-92; No of Pins: 3; Container: Bulk Original PDF
    BS170 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    BS170 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    BS170 General Semiconductor DMOS Transistors (N-Channel) Original PDF
    BS170 Infineon Technologies TRANS MOSFET N-CH 60V 0.3A 3TO-92 Original PDF
    BS170 Motorola TMOS FET Switching Original PDF
    BS170 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    BS170 On Semiconductor TRANS MOSFET N-CH 60V 0.5A 3TO-92 BULK Original PDF
    BS170 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    BS170 Philips Semiconductors N-channel vertical D-MOS transistor Original PDF
    BS170 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BS170 Siemens SIPMOS Small-Signal Transistor Original PDF
    BS170 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original PDF
    BS170 Siemens Original PDF
    BS170 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BS170 Vishay Telefunken N-Channel 60-V (D-S) MOSFET Original PDF
    BS170 General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TRANSISTOR, DMOS, small signal, plastic, N-Channel, TO-92 Scan PDF
    BS170 ITT Semiconductors Transistors 1980 Scan PDF
    BS170 ITT Semiconductors VMOS Transistor Scan PDF

    BS17 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bs170 TO-92

    Abstract: No abstract text available
    Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR POWER SEMICONDUCTOR Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B TO-92 Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7


    Original     		BS170 MIL-STD-202, DS21802 bs170 TO-92 PDF

    SN54FB2033

    Abstract: SN74FB2033A
    Text: SN54FB2033, SN74FB2033A 8-BIT TTL/BTL REGISTERED TRANSCEIVERS S C BS174G - N O VEM BER 1991 - REVISED N O VEM BER 1996 Compatible With IEEE 1194.1-1991 BTL Standard B-Port Biasing Network Preconditions the Connector and PC Trace to the BTL High-Level Voltage


    OCR Scan     		SN54FB2033, SN74FB2033A SCBS174G SN54FB2033 SN54FB2033 SN74FB2033A PDF

    MARKING bs170

    Abstract: No abstract text available
    Text: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


    OCR Scan     		BS170 MMBF170 500mA MMBF170 OT-23, MARKING bs170 PDF

    2N7000

    Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 08-Apr-05 2N7000 BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA PDF

    MOSFET bs170

    Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
    Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high


    Original     		BS170 MMBF170 500mA MOSFET bs170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note PDF

    Untitled

    Abstract: No abstract text available
    Text: BS170 N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • Low ROSon• Direct interface to C-MOS, TTL, etc.


    OCR Scan     		BS170 100pA I03b004 PDF

    2N7000KL-TR1-E3

    Abstract: BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 18-Jul-08 2N7000KL-TR1-E3 BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX PDF

    BS170P

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P IS S U E 2 - S E P T 93 FE A T U R E S * 60 Volt V DS * R D S c n r5 a REFER TO ZVN3306A FOR G RAPH S ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current a tT amb=25°C


    OCR Scan     		BS170P ZVN3306A cH7Q57Ã 001G35S BS170P PDF

    BS170 MOTOROLA

    Abstract: T0226 S-60
    Text: BS170* CASE 29-04, STYLE 30 TO-92 T0-226AA M A X IM U M RATINGS Rating Symbol Value Unit D r a in - S o u r c e V o lta g e V DS 60 Vdc G a t e - S o u r c e V o lt a g e V GS D r a in C u r r e n t ! 1) 0 .5 'D T o t a l D e v ic e D is s ip a t io n (a T ^ = 2 5 CC


    OCR Scan     		BS170* T0-226AA) BS170 BS170 MOTOROLA T0226 S-60 PDF

    BS170KL

    Abstract: 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173
    Text: 2N7000KL/BS170KL Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) VGS(th) (V) rDS(on) (W) 2 @ VGS = 10 V 60 TO-226AA (TO-92) G D 1 0.47 1 0 to 2 1.0 2.5 5 4 @ VGS = 4.5 V S ID (A) 0.33 D TrenchFETr Power MOSFET D ESD Protected: 2000 V


    Original     		2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 170KL S-40247--Rev. 16-Feb-04 BS170KL 170KL 2n7000kl equivalent 2N7000KL-TR1 BS170KL-TR1 2N7000KL RG173 PDF

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original     		BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056 PDF

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 PDF

    bs170

    Abstract: No abstract text available
    Text: G en era l S e m i c o n d u c t o r _ BS170 DMOS Transistor N-Channel TO-226AA (TO-92) 0 . 1 8 1 (4 .6) 0 .1 4 2 (3 .6) Features_ • High input im pedance • High-speed switching • No m inority carrier storage tim e


    OCR Scan     		BS170 O-226AA 20K/box 20K/box bs170 PDF

    transistor BS170

    Abstract: equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 diode marking 226 BS170G BS170RL1 BS170RLRA BS170RLRAG
    Text: BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40


    Original     		BS170 O-226) BS170/D transistor BS170 equivalent of BS170 TO 92 BS170 BS170 transistor MOSFET BS170 diode marking 226 BS170G BS170RL1 BS170RLRA BS170RLRAG PDF

    2n7000 equivalent

    Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, 2n7000 equivalent VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P PDF

    s170 TRANSISTOR

    Abstract: s170 to92 2N7000 TO-92 BS170V
    Text: P O T ALPHA SEMICONDUCTOR — •■ 2N7000/BS170L E xcellence in A n alo g P ow er P roducts N-Channel Enhancement-Mode MOS Transistor PRODUCT DESCRIPTION T he A LPH A S em iconductor 2N 7000 utilizes A L P H A ’S vertical DM O S technology. T his device is w ell suited for sw itching


    OCR Scan     		2N7000/BS170L 2N7000N BS170LN 2N7000X 2N7000 s170 TRANSISTOR s170 to92 2N7000 TO-92 BS170V PDF

    Untitled

    Abstract: No abstract text available
    Text: BS170 J V_ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers.


    OCR Scan     		BS170 PDF

    BS170

    Abstract: BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1
    Text: BS170 Preferred Device Small Signal MOSFET 500 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit VDS 60 Vdc VGS VGSM ±20 ±40 Vdc Vpk Drain Current Note 1. ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD


    Original     		BS170 r14525 BS170/D BS170 BS170 application note BS170RL1 BS170RLRA BS170RLRM BS170RLRP BS170ZL1 PDF

    2N7002 marking code 72

    Abstract: 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n (V ) rDS(on) Max (Q) V G S (th ) (V) b (A) 2N7000 5 @ V GS = 1 0V 0.8 to 3 0.2 2N7002 7,5 @ V QS= 10 V 1 to 2.5 0.115 5.5 @ V q 3 = 10 V


    OCR Scan     		2N7000/2N7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000J VQ1000P BS170 S-04279-- 16-Jul-01 2N7002 marking code 72 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay PDF

    BS170G

    Abstract: BS170 BS170RLRAG mosfet bs170
    Text: BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 TO−226 Features http://onsemi.com • This is a Pb−Free Device* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note)


    Original     		BS170G O-226) BS170/D BS170G BS170 BS170RLRAG mosfet bs170 PDF

    code for 2n7002

    Abstract: 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 BS170 VQ1000P SILICONIX 2N7002
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J O-226AA, BS170 code for 2n7002 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 VQ1000P SILICONIX 2N7002 PDF

    pin diagram of bs170

    Abstract: BS170
    Text: BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B · · Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68


    Original     		BS170 MIL-STD-202, DS21802 pin diagram of bs170 BS170 PDF

    transistor MOSFET BS170

    Abstract: MOSFET BS170
    Text: & N a t i o n al A pril 1995 Semiconductor" BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


    OCR Scan     		BS170 MMBF170 500mA MMBF170 OT-23, transistor MOSFET BS170 MOSFET BS170 PDF

    BS170

    Abstract: BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170
    Text: BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been


    Original     		BS170 MMBF170 500mA BS170 BS170 application note mosfet bs170 transistor MOSFET BS170 sot23 BS170 BS170 AN equivalent of BS170 transistor BS170 EQUIVALENT FOR bs170 MMBF170 PDF