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    BROADBAND RF POWER AMP Search Results

    BROADBAND RF POWER AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    BROADBAND RF POWER AMP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CENTELLAX UATL30MC Datasheet 0.04 - 30GHz Broadband MMIC Medium-Power Amplifier Application The UATL30MC Broadband MMIC Medium-Power Amplifier is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By using specific


    Original     		UATL30MC 30GHz 40MHz. 5-20GHz: 30GHz. 5-20GHz, 22dBm 10x10mil PDF

    CC21T36K240G5

    Abstract: UATL30MC
    Text: CENTELLAX UATL30MC Datasheet 0.04 - 30GHz Broadband MMIC Medium-Power Amplifier Application The UATL30MC Broadband MMIC Medium-Power Amplifier is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By using specific


    Original     		UATL30MC 30GHz 40MHz. 5-20GHz: 20GHz 2390x920um 10x10mil SL1010X7R101M16VH 120pF CC21T36K240G5 PDF

    zo 103MA

    Abstract: SL1010 SL353 DC TO 20GHZ RF AMPLIFIER MMIC UATL30S1C
    Text: CENTELLAX UATL30S1C Datasheet 0.04 - 30GHz Broadband MMIC Medium-Power Amplifier Application The UATL30S1C Broadband MMIC Medium-Power Amplifier is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By using specific


    Original     		UATL30S1C 30GHz 40MHz. 5-20GHz: 24dBm 21dBm 04-30GHz zo 103MA SL1010 SL353 DC TO 20GHZ RF AMPLIFIER MMIC PDF

    UAPL65SC

    Abstract: Centellax PLFX MMIC POWER AMPLIFIER 65GHz Centellax uapl65sc PLFX Traveling Wave Amplifier sl202
    Text: CENTELLAX UAPL65SC Datasheet 0.04 - 65GHz Broadband MMIC Medium-Power Amplifier with PLFX Application The UAPL65SC Broadband MMIC Medium-Power Amplifier with PLFX is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By


    Original     		UAPL65SC 65GHz 40MHz. 04-50GHz 20x20mil SL2020X7R101M16VH 100pF 25x25mil Centellax PLFX MMIC POWER AMPLIFIER 65GHz Centellax uapl65sc PLFX Traveling Wave Amplifier sl202 PDF

    UAPL45SC

    Abstract: zo 103MA 40GHz power amplifier Traveling Wave Amplifier
    Text: CENTELLAX UAPL45SC Datasheet 0.04 - 45GHz Broadband MMIC Medium-Power Amplifier with PLFX Application The UAPL45SC Broadband MMIC Medium-Power Amplifier with PLFX is designed for broadband power applications in RF and microwave communications, test equipment and military systems. By


    Original     		UAPL45SC 45GHz 40MHz. 40GHz: 10x10mil SL1010X7R101M16VH 100pF 25x25mil zo 103MA 40GHz power amplifier Traveling Wave Amplifier PDF

    VK200 19 4B INDUCTOR

    Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor PDF

    EB-27 motorola

    Abstract: hf power combiner broadband transformers Indiana general ferrite core stackpole 57-1845-24b FERRITE TOROID Indiana General F684-1 57-1845-24b Design of H. F. Wideband Power Transformers BROADBAND TRANSFORMERS AND POWER ecom-2989 power combiner broadband transformers
    Text: Order this document by AN749/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN749 BROADBAND TRANSFORMERS AND POWER COMBINING TECHNIQUES FOR RF Prepared by: H. Granberg RF Circuits Engineering INTRODUCTION The following discussion focuses on broadband transformers for RF power applications with practical examples


    Original     		AN749/D AN749 EB-27 motorola hf power combiner broadband transformers Indiana general ferrite core stackpole 57-1845-24b FERRITE TOROID Indiana General F684-1 57-1845-24b Design of H. F. Wideband Power Transformers BROADBAND TRANSFORMERS AND POWER ecom-2989 power combiner broadband transformers PDF

    thermistor r5t

    Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
    Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF373S MRF373 31JUL04 31JAN05 thermistor r5t chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010 PDF

    MRF373

    Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
    Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF373 MRF373S MRF373) MRF373 DEVICEMRF373/D RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13 PDF

    MRF173

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz


    Original     		MRF173 MRF173. AN721, MRF173 PDF

    J133 mosfet transistor

    Abstract: mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


    Original     		MRF9002R2 MRF9002R2 J133 mosfet transistor mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15 PDF

    An Introduction to Broadband Impedance Transformation for RF Power Amplifiers

    Abstract: transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors
    Text: From January 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High Frequency Design BROADBAND MATCHING An Introduction to Broadband Impedance Transformation for RF Power Amplifiers By Anthony J. Bichler RF Micro Devices, Inc. T


    Original     		AN-721, An Introduction to Broadband Impedance Transformation for RF Power Amplifiers transistor substitution chart michael hiebel fundamentals of vector analysis broadband impedance transformation smith AN-721 MOTOROLA small signal transistors PDF

    MRF255 equivalent

    Abstract: mrf255 mosfet MRF255 MRF255PHT arco 461 mica trimmer ES211 "RF MOSFETs" 100 watt hf mosfet 12 volt 14 watt hf mosfet 12 volt vdd 2204B
    Text: MOTOROLA Order this document by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Effect Transistor N–Channel Enhancement–Mode 55 W, 12.5 Vdc, 54 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies


    Original     		MRF255/D MRF255 MRF255/D* DEVICEMRF255/D MRF255 equivalent mrf255 mosfet MRF255 MRF255PHT arco 461 mica trimmer ES211 "RF MOSFETs" 100 watt hf mosfet 12 volt 14 watt hf mosfet 12 volt vdd 2204B PDF

    UNELCO

    Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor PDF

    MOSFET J132

    Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
    Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF373/D MRF373 MRF373S MRF373S MRF373/D MOSFET J132 mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503 PDF

    alc 885

    Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200
    Text: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz


    Original     		MRF173/D MRF173 alc 885 "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200 PDF

    MRF255 equivalent

    Abstract: electrolytic capacitor 470 mrf255
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies


    OCR Scan     		MRF255 MRF255 equivalent electrolytic capacitor 470 PDF

    RF MOSFETs

    Abstract: motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field E ffect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz


    OCR Scan     		MRF173. AN721, MRF173 RF MOSFETs motorola bipolar transistor data manual application MOSFET transmitters fm amplifier RF CLASS B FET MOSFET PDF

    uhf tv power transistor 250w

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF176GV MRF176GU The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode 200/150 W, 50 V, 500 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . . designed for broadband commercial and military applications using push


    OCR Scan     		MRF176GV MRF176GU MRF176GV MRF176G MRF176 MRF176GU uhf tv power transistor 250w PDF

    J115 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		10pFD 50Vdc 1N5347B, RF177 J115 mosfet PDF

    J945

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		MarketinC14 10nFD 50Vdc 1N5347B 20Vdc RF177 J945 PDF

    SU 179 transistor

    Abstract: s227
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF5035 Advance Information The RF MOSFET Line Motorola Preferred Device RF Power Field Effect Transistor N-Channel Enhancement-Mode 35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and Industrial applications at frequen­


    OCR Scan     		MRF5035 MRF5035 AN215A, MRF5035. AN721, RF5035 SU 179 transistor s227 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		MRF177/D PDF

    sp 0937

    Abstract: VK200 inductor of high frequencies Nippon capacitors
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    OCR Scan     		MRF275L/D MRF275L sp 0937 VK200 inductor of high frequencies Nippon capacitors PDF