BDX63C Search Results

Contextual Info: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.

TRANSISTOR BDX

Abstract: BDX63A Transistor 63B BDX63 BDX63B BDX62 transistor BDX 65 BDX62A BDX62B BDX62C
Contextual Info: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.

BDY11

Abstract: BDY23 BDX65C
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

BDX63

Abstract: BDX63A BDX63B BDX63C
Contextual Info: BDX 63, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V

Contextual Info: r N AMER PHILIPS/DISCRETE 2SE D • 3 thS3i3i o a m M ? J BDX62; 62A BDX62B; 62(3 V T -33-3/ SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit fo r audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,

k 117

Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A
Contextual Info: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

pnp 3223

Abstract: BDX63 TRANSISTOR C 3223 Motorola Bipolar Power Transistor Data BDX53C MOTOROLA DX53
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C . designed for general-purpose amplifier and low-speed switching applications. • High DC Current Gain — hpE = 2500 Typ @ lc = 4.0 Adc • Collector Emitter Sustaining Voltage — @ 100 mAdc

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

BDX63

Abstract: BDX63A BDX63B BDX63C
Contextual Info: NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V IC RMS IC

BDX62

Abstract: transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63B BDX63C fxs 100 10
Contextual Info: N AMER PHILIPS/DISCRETE I I b b S B ' m 5SE D o o n i N ? 3 • BDX62; 62A BDX62B; 62 3 T - 33- 3 Í SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BDY23

Abstract: BDX63A
Contextual Info: Search Results Part number search for devices beginning "BDX27" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BDX27 PNP SOT9 40V 5A 40 250 1/1 50MHz 40W

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

bdx32

Abstract: bdx65b
Contextual Info: SEMELAB LTD 37E ]> Ö1331Ö7 0DD004b M •SMLB T - 3 3 -¿>/ Type No. Option'1*^ Polari'y Package v CEO BDX14 BDX16 BDX18 BDX20 BDX27 HI-REL HI-REL SCREEN SCREEN HI-REL PNP PNP PNP PNP PNP * * BDX28 BDX29 BDX30 BDX31 BDX32 HI-REL HI-REL HI-REL PNP PNP PNP

MN2488

Abstract: BU808DF T0126 BU724A BU801 2SD1764 T0-126 2SD947 BU810-ST SOT93
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl NPN copTMpoBKa no TOKy KonneKTopa Kofl: Tok BF420 BC517 BCV27 BCV47 BC618 BC879 BD879 2SD1521 2SD1764 2SD1765 2SD947 2SD986 BU724A TIP110 BU801 2SD1933 BD675A

BAX65

Abstract: BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106B BD107A
Contextual Info: SEMELAB LTD 37E D • A1331A7 GODDQTfi 1 J S E M E L A B MANUFACTURING E ■c Polarity Package VCEO cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T05 T05 45 45 64 64 0.6 0.6 0.1 0.1 j i r / PNP PNP PNP PNP PNP T05 T05 T05 T05 T05 64 32 32 64 32 0.1

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle