Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BDX18 Search Results

    SF Impression Pixel

    BDX18 Price and Stock

    SMC Corporation of America ZH20-BD-X185

    VACUUM FLOW UNIT, ZH SERIES | SMC Corporation ZH20-BD-X185
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ZH20-BD-X185 Bulk 5 Weeks 1
    • 1 $69.9
    • 10 $69.9
    • 100 $69.9
    • 1000 $69.9
    • 10000 $69.9
    		Get Quote

    SMC Corporation of America ZH30-BD-X185

    VACUUM FLOW UNIT, ZH SERIES | SMC Corporation ZH30-BD-X185
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ZH30-BD-X185 Bulk 5 Weeks 1
    • 1 $321.26
    • 10 $321.26
    • 100 $321.26
    • 1000 $321.26
    • 10000 $321.26
    		Get Quote

    SMC Corporation of America ZH10-BD-X185

    Vacuum Flow Unit, ZH SERIES | SMC Corporation ZH10-BD-X185
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ZH10-BD-X185 Bulk 1
    • 1 $140.91
    • 10 $140.91
    • 100 $140.91
    • 1000 $140.91
    • 10000 $140.91
    		Get Quote

    SMC Corporation of America ZH40-BD-X185

    VACUUM FLOW UNIT, ZH SERIES | SMC Corporation ZH40-BD-X185
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS ZH40-BD-X185 Bulk 5 Weeks 1
    • 1 $228.59
    • 10 $228.59
    • 100 $228.59
    • 1000 $228.59
    • 10000 $228.59
    		Get Quote

    BDX18 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDX18 Comset Semiconductors PNP SILICON TRANSISTOR EPITAXIAL BASE Original PDF
    BDX18 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=70 / Ic=15 / Hfe=20-70 / fT(Hz)=0.8M / Pwr(W)=117 Original PDF
    BDX18 Continental Device India TO-3 Power Package Transistors Scan PDF
    BDX18 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BDX18 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    BDX18 Diode Transistor Transistor Short Form Data Scan PDF
    BDX18 Diode Transistor Silicon Transistors / TO-63 Transistors Scan PDF
    BDX18 General Electric Silicon P-N-P epitaxial-base high-power transistor. -100V, 115W. - Pol=PNP / Pkg=TO3 / Vceo=70 / Ic=15 / Hfe=20-70 / fT(Hz)=0.8M / Pwr(W)=117 Scan PDF
    BDX18 Iskra Power Silicon Transistors / Switching Transistors Scan PDF
    BDX18 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDX18 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDX18 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDX18 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDX18 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDX18 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDX18 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDX18 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BDX18 RCA Solid State Power Transistor Directory 1976 Scan PDF
    BDX18 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
    BDX18 SGS-Thomson Transistor Datasheet Scan PDF

    BDX18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDX18N

    Abstract: No abstract text available
    Text: BDX18N Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDX18N O204AA) 31-Jul-02 BDX18N

    Untitled

    Abstract: No abstract text available
    Text: BDX18N Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDX18N O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BDX18N Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDX18N O204AA) 18-Jun-02

    BDX18

    Abstract: No abstract text available
    Text: BDX18 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDX18 O204AA) 31-Jul-02 BDX18

    BDX18A

    Abstract: No abstract text available
    Text: BDX18A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDX18A O204AA) 31-Jul-02 BDX18A

    BDX18

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BDX18 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High switching speed APPLICATIONS ·LF large signal power amplification ·Suitable for series and shunt regulators, high fidelity amplifiers and power switching circuits


    Original     		PDF BDX18 BDX18

    BDX18

    Abstract: BDX18N
    Text: BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Suitable for : Series and shunt regulators High Fidelity Amplifiers Power-switching circuits ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit


    Original     		PDF BDX18 BDX18N BDX18 BDX18N

    Untitled

    Abstract: No abstract text available
    Text: BDX18A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDX18A O204AA) 18-Jun-02

    BDX18

    Abstract: No abstract text available
    Text: BDX18 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDX18 O204AA) 16-Jul-02 BDX18

    Untitled

    Abstract: No abstract text available
    Text: BDX18A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDX18A O204AA) 16-Jul-02

    BDX18

    Abstract: BDX18N
    Text: BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Suitable for : Series and shunt regulators High Fidelity Amplifiers Power-switching circuits ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit


    Original     		PDF BDX18 BDX18N BDX18 BDX18N

    Untitled

    Abstract: No abstract text available
    Text: BDX18 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF BDX18 O204AA) 18-Jun-02

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    MJ2955

    Abstract: bdx18
    Text: File Number HARRI S BDX18, MJ2955 994 SEMICOND SECTOR 5bE » Silicon P-N-P EpitaxialHigh-Power Transistors 430 2 27 1 0040bflfl T4T H H A S 7 =3 3 -? - 3 TERMINAL DESIGNATIONS Rugged, Broadly Applicable Devices For Industrial and Commercial Use Features: • High dissipation capability


    OCR Scan     		PDF BDX18, MJ2955 0040bflfl RCA-BDX18 MJ2955 BDX18) 92CM-3D559RI BDX18 MJ2955. 2CS-29005

    MJ2955

    Abstract: MJ2955 300 watts amplifier BDX18 bdx18 me distan U007 L100 J BDX18 33z3
    Text: G E SOLID STATE 3875081 G E SOL ID S TATE Pro Electron Power Transistors _ 01 ]>F| 3fl7S0fll 0017557 T 01Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 Silicon P-N-P Epitaxial-Base High-Power Transistors File Number 994 TERMINAL DESIGNATIONS Rugged, Broadly A pplicable Devices


    OCR Scan     		PDF BDX18, MJ2955 O-220AB RCA-BDX18 MJ2955 BDX18 MJ295S. 92CS-2 001LECTOR-TO-EMITTER 290Q7 MJ2955 300 watts amplifier bdx18 me distan U007 L100 J BDX18 33z3

    MJ2955

    Abstract: BDX18 CDP055
    Text: TO-3 Power Package Transistore PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) VCBO v CE0 (V) (V) Vebo Pd (W) (A) (V) Min Tc=25°c Min Min BDX18 100 60 7 117 15 C D P05 5 50 50 5 50 10 MJ2955 100 60 7 117


    OCR Scan     		PDF BDX18 CDP055 MJ2955

    bdx18

    Abstract: No abstract text available
    Text: TO-3 Power Package Transistors PNP Electrical Characteristics (Ta=25’ C, Unless Otherwise Specified) Maximum Ratings Type No. Pd 'c (W) (A) @Tc=25°c V CBO V CEO V EB0 (V) Min (V) Min (V) Min BDX18 100 60 7 117 15 CDP055 50 50 5 50 10 M J2 9 55 100 60


    OCR Scan     		PDF BDX18 CDP055

    mj2955

    Abstract: TH 2267 j2955 BOX18 TY 2267 MJ295S BDX18
    Text: File Number BDX18, MJ2955 994 Silicon P-N-P Epitaxial-Base High-Power Transistors TERMINAL DESIGNATIONS Rugged, Broadly Applicable Devices For Industrial and Com m ercial Use Features: • High dissipation capability ■ Low saturation voltages • Maximum safe-area-of-operation


    OCR Scan     		PDF BDX18, MJ2955 RCA-BDX18 MJ2955 BOX18) MJ2955) J2955. 92CS-29005 92CS-29006 92CS-29007 TH 2267 j2955 BOX18 TY 2267 MJ295S BDX18

    BDX18

    Abstract: J BDX18
    Text: BDX18 BDX18 PNP POWER TRANSISTOR Power Linear and Switching Applications |-—B—1 5 2 Z UJ CE D— " » ^S p < • 05 c1, Q co zui 2 □ Z , I DIM A B C D E F C H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15


    OCR Scan     		PDF BDX18 400mA BDX18 J BDX18

    bdx32

    Abstract: bdx65b
    Text: SEMELAB LTD 37E ]> Ö1331Ö7 0DD004b M •SMLB T - 3 3 -¿>/ Type No. Option'1*^ Polari'y Package v CEO BDX14 BDX16 BDX18 BDX20 BDX27 HI-REL HI-REL SCREEN SCREEN HI-REL PNP PNP PNP PNP PNP * * BDX28 BDX29 BDX30 BDX31 BDX32 HI-REL HI-REL HI-REL PNP PNP PNP


    OCR Scan     		PDF 0DD004b BDX14 BDX16 BDX18 BDX20 BDX27 BDX28 BDX29 BDX30 BDX31 bdx32 bdx65b

    MJ2955

    Abstract: j2955
    Text: k aximum Ratings Electrical Characteristics Ta=25°C, Unless Otherwise Specified V : eo (V) V) (V) Pd (W) Min Min Min 8Tc=25“c BDX18 100 60 7 117 15 CDP05S 50 ¡¡o 5 50 10 M J2955 100 50 7 117 15 N O T E . IC£X O m CD < VC80 Type No. (A) bao (uA| Max


    OCR Scan     		PDF BDX18 CDP05S J2955 MJ2955 j2955

    MJ2955

    Abstract: BDX18 J BDX18 BDX18A
    Text: G E SOLID STATE 38 75 081 01 G E SOL ID S TATE Pro Electron Power Transistors _ ]>F| 3fl7S0fll 0017557 T 0 1 Ë" 17557 D r - i J ' - 2-? BDX18, MJ2955 File Number Silicon P -N -P Epitaxial-Base High-Pow er Transistors 994 TERMINAL DESIGNATIONS R u g g e d , B ro ad ly A p p lic a b le D evices


    OCR Scan     		PDF BDX18, MJ2955 O-220AB RCA-BDX18 MJ2955 BDX18 J BDX18 BDX18A

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF