l5 transistor PNP
Abstract: BDX54F
Text: BDX54F SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION
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BDX54F
BDX54F
O-220
O-220
l5 transistor PNP
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BDX53F
Abstract: BDX54F
Text: BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL
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BDX53F
BDX54F
BDX53F
O-220
BDX54F.
BDX54F
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BDX54F
Abstract: No abstract text available
Text: BDX54F SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION
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BDX54F
BDX54F
O-220
O-220
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BDX53F
Abstract: No abstract text available
Text: BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s t c u d o ) r
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BDX53F
BDX54F
O-220
BDX54F.
O-220
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BDX53F
Abstract: BDX54F
Text: BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL
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BDX53F
BDX54F
O-220
BDX53F
O-220
BDX54F.
BDX54F
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BDX54F
Abstract: BDX53F NPN Darlington IC schematic STMicroelectronics Darlington
Text: BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE • ■ ■ ■ APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL
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BDX53F
BDX54F
O-220
BDX53F
O-220
BDX54F.
BDX54F
NPN Darlington IC schematic
STMicroelectronics Darlington
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bdx53f
Abstract: BDX54E
Text: BDX53E/BDX53F BDX54E/BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n BDX53F AND BDX54F ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX53E, BDX53F are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220
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BDX53E/BDX53F
BDX54E/BDX54F
BDX53F
BDX54F
BDX53E,
O-220
BDX54E,
BDX54FB
O-220
BDX54E
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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fw26025
Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
Text: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250
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O-264
HD1530JL*
HD1750JL*
O-220
OT-223
O-220FP
OT23-6L
O-126
O-220FH
ISOWATT218
fw26025
FW26025A
fw26025a1 equivalent
fw26025a1
st5027
st1802fx
st2310fx
MD1803DFX
BUL312FP
BU808DFH
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BUX98PI
Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490
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2N3055
2N3439
2N3440
2N3771
2N3772
2N4923
2N5038
2N5153
2N5154
2N5191
BUX98PI
TIP147T
BU808DFI equivalent
2N3055 TO-220
2N3055 TO-218 Package
Fluorescent BALLAST MJE13007
TIP3055 TO-220
ST1803DHI equivalent
BU508aFI equivalent
BU808DFI
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DK53
Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
2SC4977
MJE102
BD699
2SA1046
BU808DFI equivalent
2n3055 replacement
MJ2955 replacement
BUH513
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BDX54F
Abstract: bdx54e
Text: f Z 7 S G S -T H O M S O N ^7# BDX53E/BDX53F BDX54E/BDX54F POWER DARLINGTONS D ES C R IPT IO N The BDX53E, BDX53F are silicon epitaxial base NPN transistors in monolithic Darlington configura tion and are mounted in Jedec T 0 -2 2 0 plastic package. They are intended for use in power linear
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BDX53E/BDX53F
BDX54E/BDX54F
BDX53E,
BDX53F
BDX54E
BDX54F
BDX53E
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON !LiM iO gS bdxs3F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPE . COMPLEMENTARY PNP - NPN DEVICES • MONOLITHIC DARLINGTON CONFIGURATION ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A P P L IC A T IO N S
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BDX54F
BDX53F
T0-220
BDX54F.
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BOX53C
Abstract: Bow94c box33c BOW94CH B0X54C BDXS38 BOX54B B0X54 BU508 225/B0X54C
Text: SELECTION GUIDE BY PART NUMBER DEVICE TYPE V cbo V ceo N PN PNP BD909 BD910 BD911 BD912 BDW51C BDW52C BDW83C BDWB4C BDW93B BDW93C BDW93CP1 BÎHS941B BOW94C BOW94CH e m m BOX33C BDX34B BDX34C BDX53A BDXS38 BD^33BFI BOX53C BDX53F BOX54BFI B0X54C BDX54F BDX67C
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O-220
O-22G
BD909
BD910
BD911
BD912
BDW51C
BDW52C
BOX53C
Bow94c
box33c
BOW94CH
B0X54C
BDXS38
BOX54B
B0X54
BU508
225/B0X54C
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NPN POWER DARLINGTON TRANSISTORS
Abstract: No abstract text available
Text: H Z ! S C S -T H O M S O N ^7# BDX53F BDX54F îmei s llLI îi{s)i[]©i C O I^ E M E N T ^ Y S IU C O N POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL
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BDX53F
BDX54F
O-220
BDX54F.
NPN POWER DARLINGTON TRANSISTORS
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Untitled
Abstract: No abstract text available
Text: ¿57 SG S-TH O M SO N MD ^ HLICTI3®lfflD©i BDX53E/BDX53F BDX54E/BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDX53F AND BDX54F ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION TheBDX53E, BDX53F are silicon epitaxial-base NPN power transistors in monolithic Darlington
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BDX53E/BDX53F
BDX54E/BDX54F
BDX53F
BDX54F
TheBDX53E,
T0-220
BDX54E,
BDX54FB
DQbS170
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DX54
Abstract: No abstract text available
Text: SGS-THOMSON MGMlLIOTIlMCt BDX53E/BDX53F BDX54E/BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDX53F AND BDX54F ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX53E, BDX53F are silicon epitaxial-base NPN power transistors in monolithic Darlington
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BDX53E/BDX53F
BDX54E/BDX54F
BDX53F
BDX54F
BDX53E,
T0-220
BDX54E,
BDX54FB
BDX53E
DX54
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Untitled
Abstract: No abstract text available
Text: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50
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BDW23
BDW24
BDW23A
BDW24A
BDW23B
BDW24B
BDW23C
BDW24C
BDX53E
BDX54E
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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T0220
Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254
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BC516
BCV26
MPSA64
BDX47
T0126
BSP61
OT223
TIP117
T0220
BD678
T0220
BDT62C
2SB1647
BD680
T0-220
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mje520
Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50
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BD433
MJE200
MJE520
BD435
2N4921
2IM5190
2IM6037
MJE521
MJE180
BD135
SGS1F444
SGSD00030
e13008
BUT23
2m3771
BUT62
BUW42AP
2n5337
BUW32AP
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BDX53E
Abstract: BUB06 ST BDX53C BDW23 BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
Text: 1989963 b l de CEN TR A L I SEMICONDUCTOR oocm ns a 61C 00195'^ W~ POWER DARLINGTON TRANSISTORS EPOXY it H le = le NO. Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mhz hFE @IC Min - Max NPN PNP Amps BDW23 BDW24 : 6.0 45 50 750 - 20,000
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t-33-29
T-33-33
BDW23
BDW24
BDW23A
BDW24A
BDW23B
BDW24B
BDW23C
BDW24C
BDX53E
BUB06
ST BDX53C
BDW24
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