BCV26 Search Results

BCV26

Abstract: to-202h
Contextual Info: Discrete POW ER & Signal Technologies S e m i c o n d u c t o r ' BCV26 & _ National BCV26 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings*

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-01-20 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4

SOT23 BCV 27

Abstract: fgs npn marking BCV BCV26 BCV27 BCV46 BCV47 marking BCV H
Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV26, BCV46 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type

BCV26

Abstract: BCV46 MAX4080
Contextual Info: • ^53^31 00 BM 53 5 304 H A P X N AUER P H I L I P S / D I S C R E T E L7E T> BCV26 BCV46 SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silico n planar d a rlin g to n tran sisto r in a plastic SO T23 envelope N-P-N co m plem ent is B C V 2 7 /4 7 . Q U IC K R E F E R E N C E D A T A

T0220

Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254

Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

BC516

Abstract: BC517
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 Darlington Transistors Type M axim um R atings N=NPN P=PNP BCP28 BCP29 BCP48 BCP49 BCV26 BCV27 BCV28 BCV29 BCV46 BCV47 BCV48 BCV49 BSP50 BSP51 BSP52 BSP60 BSP61 BSP62 PZTA13 PZTA14

Contextual Info: BCV26 IS OBSOLETE PLEASE USE MMBTA64 BCV46 IS CURRENTLY ACTIVE BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47

MARKING fd SOT23

Abstract: FD MARKING CODE SOT23 BCV26 BCV27 BCV46 BCV47
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCV26; BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 FEATURES PINNING • High current max. 500 mA

Contextual Info: DISCRETE SEMICONDUCTORS DAT BCV26; BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 FEATURES PINNING • High current max. 500 mA

FD MARKING CODE SOT23

Abstract: MARKING fd SOT23 BCV26 BCV27 BCV46 BCV47 sot23 marking JR
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS

transistor 102

Abstract: BCV27 BCV26
Contextual Info: BCV27 Darlington Transistor SOT-23 FEATURES .122 3.1 .118 (3.0) .016 (0.4) ♦ High collector current ♦ High current gain ♦ NPN Silicon Planar Darlington Transistor Top View .056 (1.43) .052 (1.33) 3 BCV26 is recommended. 2 .016 (0.4) .045 (1.15) .037 (0.95)

BCV26

Abstract: PNP DARLINGTON SOT-23
Contextual Info: N BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Marking Code FGs

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors FEATURES BCV26; BCV46 PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS

FD MARKING CODE SOT23

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCV26; BCV46 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 08 Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46 FEATURES

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs

Contextual Info: bbS3^31 0024535 304 « A P X N ANER PHILIPS/DISCRETE BCV26 BCV46 b?E D SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic S O T 2 3 envelope. N-P-N complement is BCV27/47. Q U IC K R E F E R E N C E D A T A BCV26 BCV46

BCV46

Abstract: BCV26 BCV27 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV27, BCV47 NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type

BCV26

Abstract: 12e8
Contextual Info: S E M IC O N D U C T O R tm BCV26 SOT-23 b Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted

BCV26

Abstract: BCV27 BCV46 BCV47
Contextual Info: BCV26, BCV46 PNP Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23

Contextual Info: BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSU E 3 - SEPTEMBER 1995 FEATURES * L o w saturation voltage C O M P LE M E N T A R Y TYPE - B C V 2 6 - BC V27 P A R T M A R K IN G D E T A IL S - 8 C V 2 6 - ZFD c V E BC V46 - BCV47 B C V 4 6 - ZFE

Contextual Info: BCV26 BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 – SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAILS – E C BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE B ABSOLUTE MAXIMUM RATINGS. PARAMETER