BD544 MS Search Results

BD543

Abstract: BD543C BD543A BD543B BD544 silicon power transistors 543C
Contextual Info: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD544 Series TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

Contextual Info: BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD543 Series TO-220 PACKAGE TOP VIEW 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

Contextual Info: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD544 Series TO-220 PACKAGE TOP VIEW 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

BD543

Abstract: BD544 BD544A BD544B BD544C
Contextual Info: BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD543 Series TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

Contextual Info: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD544 Series TO-220 PACKAGE TOP VIEW 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

BD544C

Abstract: BD544 BD544A BD543 BD544B 74 series IC free bd544 ms
Contextual Info: BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current B 1 ● 10 A Peak Collector Current C 2 ● Customer-Specified Selections Available

B0544

Abstract: BD544A BD543 BD544 BD544B BD544C 3D544 transistor s 544a
Contextual Info: /fiANSYS BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS ELECTRONICS LIMITED Designed for Complementary Use with the BD543 Series TO-220 PACKAGE TOP VIEW 70 W at 25°C Case Temperature 8 A Continuous Collector Current B C 10 A Peak Collector Current

BD543

Abstract: BD543A BD543B BD543C BD544
Contextual Info: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current B 1 ● 10 A Peak Collector Current C 2 ● Customer-Specified Selections Available

BD543

Abstract: BD543A BD543B BD543C BD544
Contextual Info: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current B 1 ● 10 A Peak Collector Current C 2 ● Customer-Specified Selections Available

B0543C

Contextual Info: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS Copyright 1997, Power innovations Limited, UK • Designed for Complementary Use with the BD544 Series • 70 W at 25°C Case Temperature • 8 A Continuous Collector Current • 10 A Peak Collector Current

BD543

Contextual Info: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD544 Series TO-220 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature

Contextual Info: BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD543 Series TO-220 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature

Contextual Info: BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD543 Series TO-220 PACKAGE TOP VIEW 70 W at 25°C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

Semiconductor 544a

Abstract: BD543 BD544 BD544A BD544B BD544C
Contextual Info: BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current B 1 ● 10 A Peak Collector Current C 2 ● Customer-Specified Selections Available

HEP transistors

Abstract: transistor s 544a B0544 544c
Contextual Info: BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, U K JU NE 1973 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with the BD543 Series • 70 W at 25“C Case Temperature • 8 A Continuous Collector Current

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power