Untitled
Abstract: No abstract text available
Text: r z 7 S G S -m O M S O N ^ 7 # [ïffloeœiiLnera «® BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low
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BC107
BC108
BC107
BC108
BC177.
BC107/BC108
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BC107-BC108-BC109
Abstract: BC108-BC109 BC107 Tr bc107 bc109 gain bc109 bc108 TO-92
Text: SGS-THOMSON IMDœisillLICTIËiiMÛS BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input
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BC107
BC108-BC109
BC107,
BC108
BC109
BC177,
BC178
BC179.
BC107-BC108-BC109
BC108-BC109
BC107 Tr
bc109 gain
bc108 TO-92
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing
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BC107
BC108
BC109
BC107
bb53c
DDS7S03
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bc1078
Abstract: bc107 curves Characteristic curve BC107 Transistor BC1078 audio BC108 BC109 BC107 Transistor BC107 7z08 BC109 characteristic
Text: I I N AUER P H I L I P S / D I S C R E T E b'lE » • bfc.SB'iai □DS7Mtm 733 M A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. The BC107 is primarily intended for use in driver stages of audio amplifiers and in signal processing
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BC107
BC108
BC109
BC109
7Z08551
bc1078
bc107 curves
Characteristic curve BC107
Transistor BC1078
audio BC108
Transistor BC107
7z08
BC109 characteristic
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NBC107
Abstract: PH BC107 BC 109B BC107 Tr BC109
Text: DISCRETE SEMICONDUCTORS BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Sep 03 PHILIPS Philips Semiconductors Product specification
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BC107;
BC108;
BC109
117047/00/04/pp8
NBC107
PH BC107
BC 109B
BC107 Tr
BC109
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bc177
Abstract: BC257
Text: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.
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BC177,
BC107,
BC257,
BC167,
BC307,
BC237,
BC320,
BC317,
O-92B
O-92F
bc177
BC257
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BC253C
Abstract: BC253B 305900 BC251B 2N3963 BC213L BC214 BC214KC BC251A BC252A
Text: ITT Semiconductors PNP Transistors P N P Sm all Sign a l Silico n Transistors Epoxy Package TO-92 and Metal Can (TO-18). For general purpose applications. Range complementary to BC107/BC171 series. O u tlin e D ra w in g M o . 73 ap p lie s fo r T O -92 types.
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BC107/8C171
300mW
BC251A
31230C
BC251B
1231A
BC252A
31232X
BC252B
31233H
BC253C
BC253B
305900
2N3963
BC213L
BC214
BC214KC
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BC108A
Abstract: bc109
Text: BC107 to 109 _ A .F. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in TO-18 metal packages w ith the collector connected to the case. PNP com plem ents are BC177, BC178 and BC179. QUICK REFERENCE D ATA Collector-emitter voltage VgE = 0
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BC107
BC177,
BC178
BC179.
BC107A
BC107B
BC108C
BC108A
BC108B
bc109
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BC253C
Abstract: ITT Semiconductor BC263C BC261B BC107 to92 BC107 characteristic BC107 itt kh472m x1y2 250v transistor ITT bc171 BC252A
Text: ITT Semiconductors PNP Transistors P N P Small Signal Silicon Transistors Epoxy Package TO-92 and Metal Can (TO-18). For general purpose applications. Range complementary to BC107/BC171 series. O u tlin e D ra w in g M o . 73 ap p lie s fo r T O -92 types.
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BC107/8C171
300mW
BC251A
31230C
BC251B
1231A
BC252A
31232X
BC252B
31233H
BC253C
ITT Semiconductor
BC263C
BC261B
BC107 to92
BC107 characteristic
BC107 itt
kh472m x1y2 250v
transistor ITT bc171
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BC107 characteristic
Abstract: BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic
Text: MOTOROLA SC XSTRS/R F 12E 0 I b3b?SSM G0ä b4S S 1 BC107, A, B* C thru BC109, A, B, C M A X IM U M RATINGS R a tin g Sym bol BC BC BC 107 108 109 U nit Collector-Emitter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VcBO 50 30 30 Vdc Em itter-Base Voltage
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BC107,
BC109f
O-206AA)
BC107 characteristic
BC109 MOTOROLA
BC108 motorola
BC107
BC109 characteristic
BC107 MOTOROLA
h22e
bc107a
BC109
BC108 characteristic
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bc1782
Abstract: No abstract text available
Text: BC177 to 179 7 V _ A.F. SILICON PLANAR EPITAXIAL TRANSISTORS Genera! purpose P-N-P transistors in TO -18 m etal package w ith the co lle cto r connected to the case. C om plem entary types fo r the BC107, BC108 and BC109. Q U IC K R E F E R E N C E D A T A
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BC177
BC107,
BC108
BC109.
BC178
BC179
bc1782
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ZO 109
Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230
Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.
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BC109
BC177,
BC178
BC179.
ZO 109
BC 107
bc107
bc 109
BC108
bc 108
zo 107
X10-4
bc 230
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Untitled
Abstract: No abstract text available
Text: BC107, A, B, C thru BC109, A, B, C MAXIMUM RATINGS Rating Symbol BC BC BC 107 108 109 Unit C o lle c to r-E m itte r V o lta g e VCEO 45 25 25 Vdc C o lle c to r-B a s e V o lta g e VCBO 50 30 30 Vdc E m itte r-B a s e V o lta g e VEBO 6 5 5 CASE 22-03, STYLE 1
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BC107,
BC109,
O-206AA)
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bc109c
Abstract: BC107 characteristic BC109C MOTOROLA bc108b BC107A TR BC c108b 109C
Text: BC107, A, B thru BC109C M A XIM U M RATINGS Rating C o lle c to r-E m itte r V o lta g e Symbol BC 107 BC 108 BC 109C Unit v CEO 45 25 25 V dc C o lle c to r-B a s e V olta g e v CBO 50 30 30 Vdc E m itte r-B a s e V olta g e v EBO 6 5 5 C o lle c to r C u rre n t — C o n tin u o u s
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BC107,
BC109C
bc109c
BC107 characteristic
BC109C MOTOROLA
bc108b
BC107A
TR BC
c108b
109C
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TRANSISTOR BC147
Abstract: BC148 transistor npn transistor bc148 TRANSISTOR BC149 BC158 transistor transistor BC118 TRANSISTOR BC135 transistor Bc117 transistor BC148 bc117 Transistor
Text: 53 IkeìuX T ran sisto rs Continued Notes <Y> <2> <4> 5 M inim um value Average value Max. unitateralized power gain Max. frequency o f oscillation W ith heat sink ^tot: Max. total dissipation in free air at 25°C ambient temp. Max. collector-to-base voltage, em itter
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ASZ20
100mc121
ASZ21
120mW
300mcn
BC107
300mW
300mc121
330mW
50mcnl
TRANSISTOR BC147
BC148 transistor
npn transistor bc148
TRANSISTOR BC149
BC158 transistor
transistor BC118
TRANSISTOR BC135
transistor Bc117
transistor BC148
bc117 Transistor
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TRANSISTOR BC 137
Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Text: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.
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023SbGS
BC107,
BC1071Â
Q62702-C680
Q60203-X107-A
Q60203-X107-B
Q60203-X108
BC108
Q60203-X108-A
Q60203-X108-B
TRANSISTOR BC 137
TRANSISTOR bc107 current gain
BC107 characteristic
transistor bc 138
transistor BC109
bc 104 npn transistor
XL08
bc109
BC107
Transistor BC107
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BC107B
Abstract: BC107 characteristic BC107B, MOTOROLA
Text: MOTOROLA Order this document by BC107B/D SEMICONDUCTOR TECHNICAL DATA Transistors BC107B NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 45 Vdc Collecto r-B ase Voltage v CBO 50 Vdc Em itter-Base Voltage Rating
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BC107B/D
BC107B
BC107B
BC107 characteristic
BC107B, MOTOROLA
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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ircD376
BD234
VT854,
VT855â
VT854*
iTT44,
BZX79-C24,
BZX83-C24,
BZX88-C24
sx3704
BRC157
BRC-116
Germanium Diode aa143
1n4148 ITT
TRANSISTOR BC147
BC107/spice model bf199
BY238
SN76226DN
tungsram
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2N3707 DIODE
Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed
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ZTX330,
ZTX331,
BCW20
BCW22
2N3707
2N929
ZTX107
ZTX108
ZTX1I09
BC107
2N3707 DIODE
2n4058
2N2475
BC107 equivalent
Competitive
BC108
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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OT-23
BSX19 equivalent
BC350
bc107
BFW63
bcw17
SHORT DATA ON 2N744
transistor BC287
2N3020
BC451
2N2868
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Untitled
Abstract: No abstract text available
Text: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN
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2N2221
BSX48
CIL352
BSX21
BFY76
BCY59-9
BCY59-8
BCY59-7
BCY59-10
BCY59
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bc177
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BC177 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177 is a silicon planar epitaxial PNP transistors in TO-18 metal case. It is suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers.
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BC177
BC177
BC107.
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BSX21
Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
Text: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN
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BCY59-9
BFY76
BSX21
BSX48
BSY79
CIL351
CIL352
BSX21
BC107C
BC10B
2N718 pin configuration
2N915
BC109C pin configuration
BC-108
2N2221A
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2N2894 FAIRCHILD SEMICONDUCTOR
Abstract: BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt 2N3209 2N5023 BSX29
Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors M etal C a n T018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S
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BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
2N2894 FAIRCHILD SEMICONDUCTOR
BC253C
2N4258
BC171
2N2907A FAIRCHILD SEMICONDUCTOR
bc252b
BC107 itt
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