Untitled
Abstract: No abstract text available
Text: bb53c!31 0015^62 b BCX51 BCX52 BCX53 QbE D N AMER PHILIPS/DISCRETE 7V r- 2^-23 SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages
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bb53c
BCX51
BCX52
BCX53
BCX54,
BCX55
BCX56
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Untitled
Abstract: No abstract text available
Text: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is
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BLX69A
bb53c
bb53131
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ECG116
Abstract: tv schematic diagram PHILIPS
Text: i PHILIPS E C G INC 17E ECG Semiconductors bb53ci20 ODOSHTb 1 ECG 1378 T —7 4 —0 5 —01 10 W AF Power Amplifier The ECG1378 is a monolithic integrated cir cuit intended for use as a low frequency class "AB" amplifier with 10% distortion at Vcc = ±12 V. It provides 12 W output power
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bb53c
ECG1378
ECG116
tv schematic diagram PHILIPS
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE t^ E D • bb53c131 D03bb70 174 BYV96D A IAPX BYV96E AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan
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bb53c
D03bb70
BYV96D
BYV96E
D02bb7b
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2N2222A 331
Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a
Text: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.
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bb53c
2N2222
2N2222A
2N2222
7Z85736
2N2222A 331
2n2222 h 331 transistors
2n2222 -331
2n2222 a 331
2n2222 331 transistors
2n2222 - 331
2n2222 h 331
2n2222+h+331+transistors
2n2222+a+331
2n2222a
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b lE bb53cl31 DDEflEbM DEI BU508A BU508D y v I> SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits o f colour television receivers. The BU508D has an integrated efficiency diode.
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bb53c
BU508A
BU508D
OT93A
BU508D
7Z88402
7Z8S40-
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Untitled
Abstract: No abstract text available
Text: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.
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bb53c
BAS16
BAW62;
7Z65148
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BUZ24
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies
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bb53c
BUZ24
bbS3T31
Q014bD2
T-39-13
BUZ24_
0D14b03
BUZ24
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53ci31 Oai45b3 4 ■ ” BUZ50B T'Sl' H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53c
Oai45b3
BUZ50B
Q0145b7
T-39-11
bbS3T31
00145bfl
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74LVC573D
Abstract: IX-33 74LVC573 74LVC573DB
Text: NAPC/PHILIPS SEIHCOND b3E D • bb53c]2i4 0003^33 S^E « S I C 3 Philips Semiconductors Objective Specification 74LVC573 Octal D-type transparent latch; 3-state QUICK REFERENCE DATA GND = 0 V; TOTb = 25 °C; t, = t, < 2.5 ns FEATURES • • • • • •
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bb53ci2i4
74LVC573
74LVC573
74LVC573D
IX-33
74LVC573DB
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APC UPS CIRCUIT DIAGRAM
Abstract: APC be 500 UPS CIRCUIT DIAGRAM ECG9924 APC UPS CIRCUIT BOARD UPS APC rs 500 CIRCUIT diagram APC UPS CIRCUIT DIAGRAM 500 UPS APC CIRCUIT diagram UPS APC CIRCUIT Internal circuit diagram of apc ups apc ups diagram
Text: PHILIPS E C G INC ECG ECG992 4 Independent Operational Amplifiers S e m ic o n d u c to rs Features • Wide single supply voltage range or dual supplies 4Vq bb53c12fl 000455b =1 • 17E 0 c t 0 36 V I4 13 12 II 10 9 e — r . 2 8 0 "< 7 .ll> MAX. I d c ± 2 V D C t0 ±18VdC
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bb53c
000455b
ECG992
18VdC
ECG992
0004S33
APC UPS CIRCUIT DIAGRAM
APC be 500 UPS CIRCUIT DIAGRAM
ECG9924
APC UPS CIRCUIT BOARD
UPS APC rs 500 CIRCUIT diagram
APC UPS CIRCUIT DIAGRAM 500
UPS APC CIRCUIT diagram
UPS APC CIRCUIT
Internal circuit diagram of apc ups
apc ups diagram
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910U
Abstract: No abstract text available
Text: 17E □ PHILIPS E C G INC • bb53ci2û 0Q04QÔ5 ECG1121 TV COLOR SYNC. CIRCUIT semiconductors F U N C T IO N S • 3.58M H z O se. • P h a se D et. • K ille r D et. • K ille r Amp. • B u r s t G a te P u lse • T in t C ontrol PIN A R R A N G E M E N T
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bb53c
0Q04Q
ECG1121
58MHz
ECQ1121
0G04QÖ
910U
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Untitled
Abstract: No abstract text available
Text: • bb53ci31 D025flfl7 342 HAPX N APIER PHILIPS/DISCRETE PMBTA05 PMBTA06 b?E I> J V SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended for surface mounted applications. They are primarily intended for use in telephony and professional communication equipment.
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bb53c
D025flfl7
PMBTA05
PMBTA06
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BFG540
Abstract: transistor N43
Text: Philips Semiconductors • bb53cl31 0D25011 253 « A P X Product specification N AMER PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES PINNING PIN High power gain • Low noise figure • High transition frequency
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bb53c
0D25011
BFG540;
BFG540/X;
BFG540/XR
BFG540
MATV/CAT155
BFG540
transistor N43
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PBYR12045TV
Abstract: No abstract text available
Text: DEVELOPMENT DATA Q bb53cm 2SE This data sheet contains advance information and specifications are subject to change w ithout notice. 00221*13 3 El PBYR12035TV PBYR12040TV PBYR12045TV D N AMER PHILIPS/DISCRETE T O Z -2J SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES
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bb53cm
PBYR12035TV
PBYR12040TV
PBYR12045TV
T-03-21
PBYR12045TV
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74LV373
Abstract: 74LV373D 74LV373DB 74LV373N
Text: NAPC/PHILIPS SENICON] b3E J> Philips Semiconductors WM bb53c124 00fl3fl0b b63 m S I Q 3 Product Specification Octal D-type transparent latch; 3-state QUICK REFERENCE DATA GND = 0 V; T ^ = 25 °C; t, = t, < 2.5 ns FEATURES • • • • • • • 74LV373
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bb53124
00fl3fl0b
74LV373
74LV373
74HC/HCT373.
74LV373D
74LV373DB
74LV373N
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Untitled
Abstract: No abstract text available
Text: N A PIER PHILIPS/DISCRETE b^E » • b b S B ' m D030E11 4b7 « A P X J V BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range o f broadband amplifier modules designed fo r mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 S2 load.
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D030E11
BGY32
BGY35
BGY33
BGY36
BGY32
BGY35
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BTY79-400R
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bb53^31 00S73A3 T77 H A P X B IY79 StHIhS b'lE » THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for use in power control circuits e.g. light and motor control and power switching systems. The series consistos of reverse polarity types (anode to stud) identified by a suffix R: BTY79-400R to
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00S73A3
BTY79-400R
1000R.
BTY79-400R
1000R
DD273aT
bb53T31
BTY79
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bry39
Abstract: BRY39 circuit
Text: N AMER PHILIPS/MSCRETE bTE 3> bb53R31 0057635 R6T Philips Semiconductors Data sheet status Preliminary specification date of Issue December 1990 BRY39 Programmable unijunction transistor QUICK REFERENCE DATA PARAMETER PIN cathode 2 cathode gate 3 anode gate
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bb53R31
BRY39
0D27fl3b
bry39
BRY39 circuit
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T1P31DF
Abstract: No abstract text available
Text: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed
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TIP31F;
TIP31BF;
T1P31DF
TIP32F,
TIP32AF,
TIP32BF,
TIP32CF
TIP32DF.
TIP31F
bb53331
T1P31DF
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Untitled
Abstract: No abstract text available
Text: 35E D I I bb53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a
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bb53T31
BR216
BR216
O-220AB
bh5BT31
T-25-05
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE febMTJl 0Q26566 206 b^E D IAPX BUX86 BUX87 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in TO-126 envelopes, fo r use in con verters, inverters, switching regulators, m otor control systems and switching applications.
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0Q26566
BUX86
BUX87
O-126
BUX86
bbS3T31
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BY711
Abstract: BY710 MAX1719
Text: N AMER PHIL IP S/DISCRET E b'ìE D • bbSBTBl OOSbSSM 3D3 H A P X BY710 BY711 A SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H.T. rectifier diodes in glass envelopes intended for use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics.
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BY710
BY711
BY710
7Z72471
bb53131
7Z67J02
BY711
MAX1719
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MSA685
Abstract: IEC134 TDF8704 TDF8704T
Text: NAPC/PHILIPS SEMICOND fc,3E D • £^53^24 QD7ä731 SQb « S I C 3 Philips Semiconductor» Video Products_ Preliminary specification 8-bit high-speed analog-to-digita converter TDF8704 FEA T U R E S APPLICATIO NS • 8-bit resolution
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0D73731
TDF8704
MSA685
IEC134
TDF8704
TDF8704T
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