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    MSM511665-10

    Abstract: MSM511665-80
    Text: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.


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    b724240 MSM511665 536-WORD 16-BIT MSM511665 W15/I015 Lj7BM240 MSM511665' VOH-W15/1015 MSM511665-10 MSM511665-80 PDF

    4 digits 12-segment led display

    Abstract: No abstract text available
    Text: O K I SEMICONDUCTOR GROUP 23E D • b75424D DODbSSS b O K I semiconductor_ MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIGIT/ 16-SEGMENT, 12-DIGIT GENERAL DESCRIPTION The MSC7110-xx and MSC7112-xx are general purpose display controllers for vacuum fluorescent


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    b75424D MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIGIT/ 16-SEGMENT, 12-DIGIT MSC7110-xx MSC7112-xx 4 digits 12-segment led display PDF

    MAX184

    Abstract: MAX525 MSM27C256HZB
    Text: 5ÖE D • b754240 O K I O K I s e m GG1333b BbO H O K I J SEM ICONDUCTOR GROUP ic o n d u c to r - r - ^ / s - a s " MSM27C256HZB 32,768-Word x 8-Bit ONE TIME PROM GENERAL DESCRIPTION The MSM27C256HZB is a 32,768-word x 8-bit electrically programmable read-only memory.


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    242M0 001333b MSM27C256HZB 768-Word MSM27C256HZB 28-pin 32-tead MAX184 MAX525 PDF

    thermistor resistance

    Abstract: No abstract text available
    Text: O K I SEMICONDUCTOR GROUP b75424ü 0006010 7 EBE D T-4T-07 1.3/im Edge-Emitting LED DIP Module OE352G-001,OE352G-002,OE352G-004 • DESCRIPTION OKI OE352G series are 1.3//m edge-emitting LED DIP modules with single mode fiber pigtail. Using the OKI EE-LED which features high coupling efficiency, single mode fiber output over 40/MI


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    b75424ü T-4T-07 OE352G-001 OE352G-002 OE352G-004 OE352G 40/MI 50/uW OL352G-004) 400Mb/s thermistor resistance PDF

    T-46-23-18

    Abstract: N-3715 msc23408 msc2340-xxys9
    Text: i 4bE D • b75424D 000^724 61Ô « 0 K I J O K I SEMICO ND U CT OR GROUF O K I semiconductor_ M S C 2 3 4 0 - X X Y S 9 / K S 9 _ T - V é - Z I - t f 4,194.304 Word x 9 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE GENERAL DESCRIPTION


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    b72424Ã MSC2340-XXYS9/KS9 MSM514100JS) MSM514100 T-46-23-18 b72424Q msc2340-xxys9/ks9 T-46-23-18 N-3715 msc23408 msc2340-xxys9 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4bE 1 m b754240 0011635 445 H O K I J O K I semiconductor_ t-sz - i3-o r MSM6568 OKI SEMICONDUCTOR GROUP LCD Dot Matrix Common Driver TAB GENERAL DESCRIPTION The MSM6568 is a LCD dot matrix common driver of a CMOS 1C which consists of a 160-bit


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    b754240 MSM6568 MSM6568 160-bit FFMSM6549 MSM6568a PDF

    MSC2321A-80YS18

    Abstract: MSC2331A-10YS18 001035
    Text: OKI 4bE D • b75424D 0010352 Ô31 * O K I J sem ico n d u cto r_ MSC2321A-XXYS18 O K I S E H I C 0 N D U C T 0 R GROUP 524,288 Word BY 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2321A-xxYS18 is a fully decoded, 524,288 word x 32 bit CMOS dynamic random access


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    b724240 MSC2321A-XXYS18 MSM514256AJS) MSM51C256JS) MSM514256AJS; -xxYS18 RAM-MSC2321A-XXYS18 MSC2321A-80YS18 MSC2331A-10YS18 001035 PDF

    LED BARGRAPH pin configuration

    Abstract: 093S b7am display 16 segments 16-SEGMENT 4 digits 7-segment led display cl
    Text: O K I S E MI C O N D U C T O R GROUP 23E D • b75424D DODbSSS b O K I semiconductor_ MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIGIT/ 16-SEGMENT, 12-DIGIT GENERAL DESCRIPTION The M SC 7 11 0-xx and M SC 7 11 2-xx are general p urpose display controllers for vacuum fluorescent


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    b7S424D MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIG1T/ 16-SEGMENT, 12-DIGIT MSC7110-xx MSC7112-xx LED BARGRAPH pin configuration 093S b7am display 16 segments 16-SEGMENT 4 digits 7-segment led display cl PDF

    MSM5116160

    Abstract: dq8e N4409
    Text: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er


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    MSM5116160 576-Word 16-Bit MSM5116160 42-pin 50/44-pin dq8e N4409 PDF

    transistor sl 431

    Abstract: ZIP40-P-475
    Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.


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    MSM514190/SL_ 144-Word 18-Bit MSM514190/SL theMSM514190/SL cycles/16ms, transistor sl 431 ZIP40-P-475 PDF

    OCV CM 1092

    Abstract: SP 1191 MSM6576
    Text: O K I Semiconductor MSM6576-XX_ Operatable at 0.9V and 7-level Detector 4-Bit Microcontroller GENERAL DESCRIPTION M SM 6576 is a 4-bit, low -pow er m icrocontroller that is manufactured in a C M O S silicon-gate process. The m icrocontroller can be started and operated at a low supply voltage of 0.9 V.


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    MSM6576-XX_ MSM6576 L72424G 0G24G13 OCV CM 1092 SP 1191 PDF

    MSM64162-XXX

    Abstract: MSM64162 sis 496 Ml17
    Text: O K I Semiconductor M S M 6 4 1 6 2 _ Built-in RC Oscillator type A/D Converter and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The M SM 64162 is a low pow er 4-bit m icrocontroller using O K I original C P U core n X -4 /2 0 . The M SM 64162 has the m inim u m instruction execution tim e o f 7.5 |is @ 400 kH z and has


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    MSM64162_ MSM64162 nX-4/20. 2016-byte 128-nibble MSM64162 b7e4E40 MSM64162-XXX sis 496 Ml17 PDF

    active suspension

    Abstract: m56v16 m56v1640010
    Text: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


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    MSM56V16400_ 152-Word MSM56V16400 cycles/64 b7E424G DD2Q377 active suspension m56v16 m56v1640010 PDF

    MSM531021B

    Abstract: No abstract text available
    Text: O K I Semiconductor M SM 531021B 131,072-Word x 8-Bit Mask ROM DESCRIPTION i S ^ M 5310218 is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531021B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro­


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    MSM531021B 072-Word MSM531021B PDF

    Piezo sounder

    Abstract: TONE/VOLUME CONTROL CIRCUIT MSM6895 MSM7502 MSM7502GS-BK MSM7543 RM01
    Text: O K I Semiconductor MSM7502 Multi-Function PCM CODEC G E N E R A L D E S C R IP T IO N The M SM 7502, developed especially for low -pow er and m ulti-function applications in touch­ tone telephone sets and digital telephone term inals o f digital PBXs, is a single +5 V pow er supply


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    MSM7502_ MSM7502, MSM7543 MSM7502 Piezo sounder TONE/VOLUME CONTROL CIRCUIT MSM6895 MSM7502GS-BK RM01 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The


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    MSM511001B 576-Word MSM511001B R1001B D0177fiD PDF

    A5 GNC

    Abstract: TSOP32-P-4QO-K 51V17400 5116100
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


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    MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64m A5 GNC TSOP32-P-4QO-K 51V17400 5116100 PDF

    m51171

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM51V17180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynam ic RA M organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is O K I's CM O S silicon gate process technology.


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    MSM51V17180 576-Word 18-Bit MSM51V17180 cycles/32ms m51171 PDF

    RTSE200

    Abstract: No abstract text available
    Text: O K I Semiœnductor MSM65512/65P512 Oki Original High Perform ance C M O S 8-Bit M icrocontroller GENERAL DESCRIPTION The MSM65512 is a high-performance 8-bit microcontroller that employs Oki's original nX-8/50 CPU core. With a minimum instruction execution time of 400 ns 10MHz clock , the MSM65512 is


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    MSM65512/65P512 MSM65512 nX-8/50 10MHz MSM65P512, 2424Q GG23543 b724240 RTSE200 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I S E M I C O N D U C T O R GR O U P S3E D b 7 S 4 S M Q OOOTTfifl 1 T -41-07 84/im LED ¿iv*—T-i- -V ' .• . . ^ •>>;’ Sölili E804D/0E805D • DESCRIPTION The OE804D, OE805D are 840 nm AIGaAs Double Heterostructure LEDs developed as light sources'for fiber-optic communications.


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    84/im E804D/0E805D OE804D, OE805D OE804D QE805D b754240 0E805D T-41-07 PDF

    fluorescent Display driver

    Abstract: No abstract text available
    Text: _ SÔE D • b 7 2 M E M G O O l M M b ô 74R H O K I J O K I Semiconauctor M S L 917 O K I SEMICONDUCTOR CROUP — f - S 2 - [$- 1 9 8-BIT PARALLEL-IN PARALLEL-OUT GENERAL DESCRIPTION Input may be driven directly by the TTL or CMOS. The vacuum fluorescent display tube


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    MSL917 MSL917 b754240 DD14471 fluorescent Display driver PDF

    MSM5116180-70

    Abstract: MSM5116180-80
    Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


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    MSM5116180_ 576-Word 18-Bit MSM5116180 cycles/64ms MSM5116180-70 MSM5116180-80 PDF

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


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    MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K PDF

    001472

    Abstract: No abstract text available
    Text: Sfl E D • b7EMEM0 001M712 446 MOKIJ -S 2 / M 5 -Æ O K I MSC7125-XX ? SEMI CONDUCTOR GROUP 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-xx is a Bi-CMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-xx drives displays with up to


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    b7EME40 MSC7125-XX MSC7125-xx 16-bit SEG36-40 SEG1-35 001472 PDF