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    TDK Corporation C1005JB1E224K050BC

    CAP CER 0.22UF 25V JB 0402
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    DigiKey () C1005JB1E224K050BC Cut Tape 14,110 1
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    C1005JB1E224K050BC Digi-Reel 14,110 1
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    Panasonic Electronic Components EEU-EB1E221SJ

    CAP ALUM 220UF 20% 25V RADIAL TH
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    DigiKey () EEU-EB1E221SJ Cut Tape 2,787 1
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    EEU-EB1E221SJ Ammo Pack 1,000 1,000
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    Mouser Electronics EEU-EB1E221SJ 3,068
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    Newark EEU-EB1E221SJ Bulk 1,000
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    Master Electronics EEU-EB1E221SJ 4,000
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    TDK Corporation C2012JB1E225K125AC

    CAP CER 2.2UF 25V JB 0805
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    DigiKey () C2012JB1E225K125AC Digi-Reel 2,171 1
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    C2012JB1E225K125AC Cut Tape 2,171 1
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    C2012JB1E225K125AC Reel 2,000 2,000
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    Chip One Stop C2012JB1E225K125AC Cut Tape 43,070 0 Weeks, 1 Days 50
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    Kyocera AVX Components TCOB1E226M8R-EB1

    B- CASE / 226- CAP CODE / POLY
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    DigiKey TCOB1E226M8R-EB1 Reel 2,000 2,000
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    TDK Corporation C2012JB1E225M125AC

    CAP CER 2.2UF 25V JB 0805
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    DigiKey C2012JB1E225M125AC Digi-Reel 1,995 1
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    Bristol Electronics C2012JB1E225M125AC 9,300
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    B1E2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    403D

    Abstract: MBRA120ET3
    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    MBRA120ET3 MBRA120ET3/D 403D MBRA120ET3 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    2N3800

    Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
    Contextual Info: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­


    OCR Scan
    29B52595F13 52595F09 2N3800 germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817 PDF

    403D

    Abstract: MBRA120ET3
    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    MBRA120ET3 r14525 MBRA120ET3/D 403D MBRA120ET3 PDF

    aff11

    Contextual Info: 1 1234567895ABC5DEF55 5 55 5 1 1 225245 5 8585 12345625 A 5 2234563781 9A6B17B21 CDB271 EF19AAA1 233271 9A6B17BD1 CDB271 FA151CDB71 723A3221 9A612B71 CDB21 4A1 !A1 1 2!C23456728


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    1234567895ABC5DEF 9A6B17B21 CDB271 9A6B17BD1 1CDB71 9A612B71 CDB21 123456789A88B889BCD4E6FDC34DD68 88B88 aff11 PDF

    INCOMING RAW MATERIAL INSPECTION

    Abstract: smd led 5050 0.5 w datasheet INCOMING RAW MATERIAL INSPECTION procedure uei310 smd led 5050 datasheet smd 6 led 5050 datasheet airgap Vs Al Value in Ferrite Core TOROIDS Design Considerations smd led 5050 smd transistor A6t
    Contextual Info: Soft Ferrites THOMSON-CSF PASSIVE COMPONENTS A Committed International Strategy “Provide worldwide an innovative range of components and effective solutions focused on the needs of customers and the evolution of market applications.” “Ensure the growth of the company and the satisfaction of shareholders


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    PDF

    dmbra120et3

    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    MBRA120ET3 dmbra120et3 PDF

    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    MBRA120ET3 MBRA120ET3/D PDF

    4593

    Contextual Info: 4 DRAWING MADE IN THIRD ANGLE PR O JEC TIO N THIS DRAWING IS UNPUBLISHED COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL LÛC ,1 9 INTERNATIO NAL RIG H T5 G RESERVED. D IS T R EVISIO N S 14 ZONE LTR D ES C R IPTIO N R E V . RDRW. 8 SM PKG


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    B-152 IL-T-10727 AMP26463 US128A DEPT1123 DWG1123 15TRAND 4593 PDF

    D49E

    Abstract: C886 2A E09A 81aa s m b692 B088 k B688 A992 D882 p01 b882 e09a
    Contextual Info: 字符叠加器芯片EA200 济南怡安科技有限公司 ————————————————————————————————————————————— 通用字符叠加器芯片 EA200 技术说明书 一产品特性


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    EA200 D49E C886 2A E09A 81aa s m b692 B088 k B688 A992 D882 p01 b882 e09a PDF

    SMA CASE 403D-02 footprint

    Contextual Info: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    MBRA120ET3G MBRA120ET3/D SMA CASE 403D-02 footprint PDF

    Contextual Info: MBRA120E, NRVBA120E Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


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    MBRA120E, NRVBA120E MBRA120ET3/D PDF

    B1E2

    Abstract: 403D
    Contextual Info: MBRA120ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    MBRA120ET3 B1E2 403D PDF

    Contextual Info: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    MBRA120ET3G MBRA120ET3/D PDF

    72d9

    Contextual Info: 2&' 1 1 62E61 1 1 1 36D"5391 23435671839A5BCDBE41 13 13 13 13 13 13 13 13 13 13 13 343 33D441234F3 3434! "4


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    111234516789AB9CD4891EA9F397 D8451 23435671839A5BCDBE41 1234561789AB4CBDE4F D441234F3 249BB4 64D6231 1234561789AB4574 988D7 38E1FC 72d9 PDF