MBRA120ET3G Search Results
MBRA120ET3G Price and Stock
onsemi MBRA120ET3GDIODE SCHOTTKY 20V 1A SMA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBRA120ET3G | Cut Tape | 8,306 | 1 |
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MBRA120ET3G | Reel | 8 Weeks | 10,000 |
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MBRA120ET3G | 90,798 |
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MBRA120ET3G | 20,000 | 5,000 |
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MBRA120ET3G | 20,000 | 8 Weeks | 5,000 |
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MBRA120ET3G | Cut Tape | 10,000 | 5 |
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MBRA120ET3G |
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MBRA120ET3G | 1,105 |
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MBRA120ET3G | 1 |
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MBRA120ET3G | 10,000 |
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MBRA120ET3G | 8 Weeks | 15,000 |
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MBRA120ET3G | 9 Weeks | 5,000 |
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MBRA120ET3G | 10 Weeks | 5,000 |
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MBRA120ET3G | 25,000 |
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MBRA120ET3G | 88,786 |
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MBRA120ET3G Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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MBRA120ET3G |
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Schottky Barrier Diodes | Original | |||
MBRA120ET3G |
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1A 20V Low Leakage Schottky Rectifier | Original |
MBRA120ET3G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MBRA120ET3GContextual Info: TH97/10561QM MBRA120ET3G TW00/17276EM IATF 0060636 SGS TH07/1033 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PRV : 20 Volts Io : 1.0 Ampere SMA 5.3 ± 0.35 FEATURES : * Highly Stable Oxidation Passivated Junction * Guardring for Over - Voltage Protection * Optimized for Low Leakage Current |
Original |
TH97/10561QM MBRA120ET3G TW00/17276EM TH07/1033 UL94V-O MBRA120ET3G | |
SMA CASE 403D-02 footprintContextual Info: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
Original |
MBRA120ET3G MBRA120ET3/D SMA CASE 403D-02 footprint | |
Contextual Info: Certificate TH97/10561QM MBRA120ET3G Certificate TW00/17276EM SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PRV : 20 Volts Io : 1.0 Ampere SMA 5.4 ± 0.2 * Highly Stable Oxidation Passivated Junction * Guardring for Over - Voltage Protection * Optimized for Low Leakage Current |
Original |
TH97/10561QM MBRA120ET3G TW00/17276EM UL94V-O | |
Contextual Info: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
Original |
MBRA120ET3G MBRA120ET3/D | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor | |
Jamicon capacitor
Abstract: SKR220M2AFBB 1206zC106K jamicon electrolytic capacitors jamicon ST-4EG-103 lvr03r 3 phase invertor schematic MC33297 TDK TSL0709
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KIT33927EKEVBE KT33927UG Jamicon capacitor SKR220M2AFBB 1206zC106K jamicon electrolytic capacitors jamicon ST-4EG-103 lvr03r 3 phase invertor schematic MC33297 TDK TSL0709 | |
Contextual Info: User's Guide SBOU078 – June 2009 PGA2505EVM This document provides the information needed to set up and operate the PGA2505EVM evaluation module EVM and accompanying software. For a detailed description of the PGA2505 device, please refer to the product data sheet available from the Texas Instruments web site at www.ti.com. Additional |
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SBOU078 PGA2505EVM PGA2505EVM PGA2505 | |
J200 mosfet
Abstract: Jamicon capacitor jamicon np capacitor u101b Jamicon capacitor np jamicon MC33937A KIT33937AEKEVBE Jamicon 47uf miniature 2.1mm DC power jack connector
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KT33937AUG KIT33937AEKEVBE J200 mosfet Jamicon capacitor jamicon np capacitor u101b Jamicon capacitor np jamicon MC33937A Jamicon 47uf miniature 2.1mm DC power jack connector | |
Contextual Info: MBRA120E, NRVBA120E Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high |
Original |
MBRA120E, NRVBA120E MBRA120ET3/D |