42756 regulator
Abstract: 42756 C207 capacitor j146 1300 transistor
Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with
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PTVA123501EC
PTVA123501EC
H-36248-2
42756 regulator
42756
C207 capacitor
j146
1300 transistor
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c102 TRANSISTOR
Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
c102 TRANSISTOR
NFM18PS105R0J3
tl111
TRANSISTOR C802
TL204
TL231
c801
TL-205A
tl113
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MCR03J
Abstract: 0805 X7R ROHM MCH215 683j CAPACITOR 25X1 CMM1333 DCS-1800 IS-136 CMM1333-AK-OOTT
Text: 9 SSÍSRiTSK =• CMM1333 P re lim in a ry Product Inform ation D ecem ber 1997 1 of 6 1.85 to 1.91 GHz 5V, 31 dBm, PCS/PCN Power Amplifier Features □ 35% Linear Power Added Efficiency □ 31 dBm Output Power (IS-136 TDMA) □ 29 dBm Output Power (J-STD-18 CDMA)
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CMM1333
IS-136
J-STD-18
MCR03J
0805 X7R ROHM MCH215
683j CAPACITOR
25X1
CMM1333
DCS-1800
CMM1333-AK-OOTT
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Untitled
Abstract: No abstract text available
Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550979A
R09DS0031EJ0200
IEC61000-4-2,
NE5550979A
NE5550979A-A
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TL225
Abstract: ATC100A6R2CW150X
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
TL225
ATC100A6R2CW150X
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TL113
Abstract: tl201 TL217 w3 smd transistor transistor c111
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
PG-SON-10
TL113
tl201
TL217
w3 smd transistor
transistor c111
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bipolar transistor ghz s-parameter
Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in
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HBFP-0450
HBFP-0450
OT-343
SC-70)
031-inch
59257503E-13
292E-1
bipolar transistor ghz s-parameter
1565E
LL2012-F
5e19
bipolar transistor s-parameter
COND10
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Untitled
Abstract: No abstract text available
Text: PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design,
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PTVA093002TC
PTVA093002TC
300-watt
50-ohm
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ATC100A101JT
Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm
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NE5550979A
R09DS0031EJ0200
IEC61000-4-2,
HS350
NE5550979A
ATC100A101JT
Waka 01K0790-20
ATC100A3R3BW
GRM1882C1H101JA01
GRM31CR72A105KA01B
R-4775
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Untitled
Abstract: No abstract text available
Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced
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PTVA123501EC
PTVA123501FC
PTVA123501EC
PTVA123501FC
H-36248-2
H-37248-2
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TRANSISTOR C802
Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
TRANSISTOR C802
LM7805 c SMD
V4 MARKING
p 4712
transistor c803
atc100a200jw
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RF Transistor s-parameter
Abstract: HBFP-0450 ADS MODEL HBFP0450
Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium
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HBFP-0450
OT-343
SC-70)
031-inch
5968-2788E
RF Transistor s-parameter
HBFP-0450 ADS MODEL
HBFP0450
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R1766
Abstract: No abstract text available
Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550979A
R09DS0031EJ0300
IEC61000-4-2,
NE5550979A
NE5550979A-A
R1766
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0805 X7R ROHM MCH215
Abstract: CMM1333 DCS-1800 IS-136 PB-CMM1333-AK 1009 so-8 MCR03J ATC100A3R MCH215C472KK
Text: 9 CELERÈTSK CMM1333 P relim inary Product Inform ation D ecem ber 1 9 9 7 1 of 6 1.85 to 1.91 GHz 5V, 31 dBm, PCS/PCN Power Amplifier Features □ 35% Linear Power Added Efficiency □ 31 dBm Output Power (IS-136 TDMA) □ 29 dBm Output Power (J-STD-18 CDMA)
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CMM1333
IS-136
J-STD-18
0805 X7R ROHM MCH215
CMM1333
DCS-1800
PB-CMM1333-AK
1009 so-8
MCR03J
ATC100A3R
MCH215C472KK
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AN1955
Abstract: AN1987 MHV5IC1810NR2 J9-33 336 Z11 J1165
Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage
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MHV5IC1810N
MHV5IC1810N
MHV5IC1810NR2
AN1955
AN1987
MHV5IC1810NR2
J9-33
336 Z11
J1165
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm
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NE5550279A
R09DS0033EJ0200
NE55502ine
WS260
HS350
R09DS0033EJ0200
NE5550279A
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c102 TRANSISTOR
Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200
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PTFA220081M
PTFA220081M
PG-SON-10
c102 TRANSISTOR
c103 TRANSISTOR
c106 TRANSISTOR
TRANSISTOR c105
TRANSISTOR c104
c103 m TRANSISTOR
p 4712
NFM18PS105R0J3
c105 TRANSISTOR
tl113
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Untitled
Abstract: No abstract text available
Text: PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced
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PTVA123501EC
PTVA123501FC
PTVA123501EC
PTVA123501FC
H-36248-2
H-37248-2
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C801
Abstract: 1/db3 c801
Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS
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PTFA220121M
PTFA220121M
12-watt
PG-SON-10
C801
1/db3 c801
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 1, 3/2011 RF LDMOS Wideband Integrated Power Amplifier MHV5IC1810NR2 The MHV5IC1810N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage
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MHV5IC1810N
MHV5IC1810NR2
MHV5IC1810N
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42756 regulator
Abstract: No abstract text available
Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power ampliier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with
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Original
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PTVA123501EC
PTVA123501EC
H-36248-2
42756 regulator
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
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NE5550279A
R09DS0033EJ0200
NE5550279A
NE5550279A-A
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ATC100A100JW
Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm
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NE5550279A
R09DS0033EJ0100
NE5550279A
NE5550279A-A
WS260
HS350
ATC100A100JW
GRM188B31C105KA92
ATC100A3R9BW
atc100a150
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PDF
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Untitled
Abstract: No abstract text available
Text: 9 ~ ze s L S B ir m K CMM1333 Prelim inary Product Inform ation S eptem ber 1996 1 o f 6 1.85 to 1.91 GHz 5V, 31 dBm, PCS/PCN Power Amplifier Features □ 35% Linear Power Added Efficiency □ 31 dBm Output Power (IS-136 TDMA) □ 29 dBm Output Power (J-STD-18 CDMA)
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OCR Scan
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CMM1333
IS-136
J-STD-18
CMM1333
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PDF
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