R09DS0031EJ0300 Search Results
R09DS0031EJ0300 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
R1766Contextual Info: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) |
Original |
NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766 | |
Panasonic R1766Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm |
Original |
NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766 |