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    AT&T 100A Search Results

    AT&T 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJH65S04DPQ-A0#T0 Renesas Electronics Corporation IGBT 650V 100A Single Visit Renesas Electronics Corporation
    RJP1CS06DWA-80#W0 Renesas Electronics Corporation IGBT 1250V 100A Wafer Visit Renesas Electronics Corporation
    RJP65S06DWT-80#X0 Renesas Electronics Corporation IGBT 650V 100A Chip Visit Renesas Electronics Corporation
    RJP1CS26DWA-80#W0 Renesas Electronics Corporation IGBT 1250V 100A Wafer Visit Renesas Electronics Corporation
    RJP1CS26DWS-80#W0 Renesas Electronics Corporation IGBT 1250V 100A Sawn Visit Renesas Electronics Corporation
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    AT&T 100A Price and Stock

    ROHM Semiconductor RQ7E100ATTCR

    MOSFETs Pch -30V -10A Small Signal Power MOSFET. RQ7E100AT is low on-resistance MOSFET for switching.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RQ7E100ATTCR 3,025
    • 1 $1.31
    • 10 $1.05
    • 100 $0.731
    • 1000 $0.548
    • 10000 $0.495
    		Buy Now

    ROHM Semiconductor RQ3E100ATTB

    MOSFETs RQ3E100AT is the high reliability transistor, suitable for switching applications.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RQ3E100ATTB 2,503
    • 1 $0.84
    • 10 $0.687
    • 100 $0.508
    • 1000 $0.369
    • 10000 $0.315
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    Tektronix Inc TSG-4100-ATT

    Function Generators & Synthesizers 5W RF Attenuator 6GHz; 30dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TSG-4100-ATT
    • 1 $280
    • 10 $280
    • 100 $280
    • 1000 $280
    • 10000 $280
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    KEMET Corporation T110A474M100AT7200

    Tantalum Capacitors - Solid Leaded 100V 0.47uF 20% ESR=12Ohms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics T110A474M100AT7200
    • 1 $22.84
    • 10 $21.04
    • 100 $16.59
    • 1000 $16.59
    • 10000 $16.59
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    KEMET Corporation T110B225K100AT7200

    Tantalum Capacitors - Solid Leaded 100V 2.2uF 10% ESR=3Ohms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics T110B225K100AT7200
    • 1 $39.06
    • 10 $35.81
    • 100 $32.55
    • 1000 $32.55
    • 10000 $32.55
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    Find more AT&T 100A price and stock on Findchips.com

    AT&T 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RHRG3040

    Abstract: 100ns RHRG1550CC RHRU100120 RHRD440 RHRD440S RHRD640 RHRD640S RHRP1540 RHRP3040
    Text: 15A 30A 30A 50A 75A 50A 75A 100A S E M I C O N D U C T O R ITALICS = Future Product Offerings; VF at IF AVG , TJ = 25oC; TRR at IF(AVG), dIF/dt = 100A/µsec TJ = 25oC; † TRR at IF = 1A RHRP8120 RHRP15120 RHRP30120 RHRG30120 RHRG50120 RHRG75120 RHRU50120 RHRU75120 RHRU100120


    Original     		PDF RHRP8120 RHRP15120 RHRP30120 RHRG30120 RHRG50120 RHRG75120 RHRU50120 RHRU75120 RHRU100120 100ns RHRG3040 RHRG1550CC RHRU100120 RHRD440 RHRD440S RHRD640 RHRD640S RHRP1540 RHRP3040

    Untitled

    Abstract: No abstract text available
    Text: CFM 201S Series OPEN FRAME & ENCLOSED 2 0 0 W AT T S - A C / D C S I N G L E O U T P U T FEATURES • • • • • • Universal Input 90 ~ 264Vac Active PFC Meets EN61000-3-2 Conductive EMI Meets CISPR/FCC Class B High Efficiency at 92% Typical Remote Voltage Sense


    Original     		PDF 264Vac EN61000-3-2 90-264Vac A/115Vac A/230Vac 240Vac 4242VDC 115Vac CFM201S240 150mV

    Q817C

    Abstract: q817 DSS2-60AT2 IPS18 IPS-DK18 FERRITE core ee TRANSFORMER dss2 IPS18C 1N4148 1N4743A
    Text: D E S I G N K I T / E VA L U AT I O N S Y S T E M – A P P L I C AT I O N T O O L B R I E F N E W A P P L I C A T I O N T O O L B R I E F IPS-DK18 / EVPS001 Schematic EI/EE CORE FERRITE TRANSFORMER 13MM L1 Design Kit and Evaluation System: 5W to 10W Ultra-Green Power Supply


    Original     		PDF IPS-DK18 EVPS001 330uH DSS2-60AT2 180pF 1N4148 100uF 10MEG A/600V IXTY1R4N60P Q817C q817 DSS2-60AT2 IPS18 FERRITE core ee TRANSFORMER dss2 IPS18C 1N4148 1N4743A

    ISO 7588

    Abstract: No abstract text available
    Text: Relay Products Shortform Catalog d broa y l e em extr ny n a a ffers on in m ive o s t i c , at at rodu applic , Altern Vehicle P y r er fo ela l nce TE R f relays Applia tive Pow ndustria eo t, I rna ets. rang t mark ve, Alte uipmen y Eq ren oti e ke diffe , Autom uilding e of th


    Original     		PDF

    DF378F

    Abstract: DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris
    Text: HRP2540 S E M I C O N D U C T O R Power Rectifier/Power Surge Suppressor April 1995 Features Package • Low Forward Voltage Drop 1.1V Max at 100A JEDEC TO-220AB A • High Reverse Energy Capability K A • Controlled Maximum Avalanche Voltage (40V Max at 40A)


    Original     		PDF HRP2540 O-220AB TA9673) 25oC/W NR231A DF103B DF378F 09kgf DF378F DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris

    NE5534

    Abstract: ne5534 application note decibel meter 2181C LF351 2181a compressor audio use transistor NE5534 applications 2180C 2181B
    Text: T H AT Corporation APPLICATION NOTE 100A Basic Compressor/Limiter Design Abstract THAT Corporation’s 2252 RMS-Level Detector and 2180/2181 Series Voltage-Controlled Amplifiers VCAs are ideal basic building blocks for compressor/limiter designs. This application note


    Original     		PDF

    beta transistor 2N2222

    Abstract: NPN transistor 2n2222 beta value beta dc of transistor 2N2222 2N2222 transistor 2N2907 NPN Transistor 2N2222 2N2222 to-3 package Datasheet 2N2222 transistor 2N2222 pnp 2n2222 similar
    Text: EL2021 CT ENT ODU E PR PLACEM er at T E L t E O OBS ENDED R port Cen m/tsc up sil.co M S M l O a ic er EC echn www.int NO R Data November 1993, Rev. F r our T Sheet o t c L I a t con -INTERS 1-888 FN7027 Monolithic Pin Driver Features The EL2021 is designed to drive


    Original     		PDF EL2021 FN7027 EL2021 beta transistor 2N2222 NPN transistor 2n2222 beta value beta dc of transistor 2N2222 2N2222 transistor 2N2907 NPN Transistor 2N2222 2N2222 to-3 package Datasheet 2N2222 transistor 2N2222 pnp 2n2222 similar

    g20n60b3d

    Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060
    Text: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC


    Original     		PDF HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. g20n60b3d MOSFET 40A 600V LD26 RHRP3060

    decibel meter

    Abstract: 2181C 2252 rms 2180C 2181B LF351 NE5534 LF351 OPERATION Signal Path designer
    Text: Design Note 00A formerly Application Note 100A T H AT Corporation Basic Compressor/Limiter Design Abstract THAT Corporation’s 2252 RMS-Level Detector and 2180/2181 Series Voltage-Controlled Amplifiers (VCAs) are ideal basic building blocks for compressor/limiter designs. This application note


    Original     		PDF

    NZM7-40

    Abstract: FAZ-XHI001 moeller nzm7 IEC 947-2 VDE 0660 100a vde 0636 AC-22B VDE 0660 iec 947-2 DC21B moeller MCB NZM7
    Text: 12/037 Moeller HPL0211-2001/2002 FAZ tripping characteristics at 30 °C: R to IEC/EN 60 947 1.05 1.30 1.13 1.45 FAZ tripping characteristics at 30 °C: B, C, D to IEC/EN 60 898 Specified non-tripping current I nt = 1.13 ҂ I n for t > 1 h Specified tripping current


    Original     		PDF HPL0211-2001/2002 NZM7-40 FAZ-XHI001 moeller nzm7 IEC 947-2 VDE 0660 100a vde 0636 AC-22B VDE 0660 iec 947-2 DC21B moeller MCB NZM7

    G20N60B3D

    Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
    Text: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated


    Original     		PDF HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. RHRP3060 1-800-4-HARRIS G20N60B3D BVces LD26 igbt 600V 45UH

    TRANSISTOR noise figure measurements

    Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
    Text: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER


    OCR Scan     		PDF 2N6680 HFET-1101) HFET-1102 2N6680) HFET-1102) HFET-1102 TRANSISTOR noise figure measurements Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite

    MG25N1JS1

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG25N1JS1 HIGH POWER S W I T C H I N G A P P L I C AT ION S. M O T O R C O N T R O L A P P L I C AT ION S. . High Input Impedance . High Speed : tf= 1 . Ous M a x . t r r = 0 . 5 n s ( M a x .) . Low Saturation Voltage:


    OCR Scan     		PDF MG25N1JS1 1000U MG25N1JS1

    PHN174

    Abstract: No abstract text available
    Text: Fast R ecovery D io d es ~ Stud & flat base types Type V RRM ^F AV Range a t L ase W > M ax(at t case) I F Max. Typica R everse FRecovered Charge (at Tcase) and Typic:al Reverse Recovery (i Tj Max. 10m s (50% Chord) V r=s 60% 100°C ^FSM (1) ^RRM (Note 3)


    OCR Scan     		PDF PHN174 PHN174

    Untitled

    Abstract: No abstract text available
    Text: INT ERN AT IO NAL RECTIFIER 4T Dl F 4f i554S2 0004744 S Data Sh eet No. PD-3.067 IN T E R N A T IO N A L R E C T I F I E R I O R -r*ss-£Q 1410A, 1 100A RMS Hockey Puk Thyristors 900PE, 700PE SERIES Description The 700PE and 900 P E series o f converter type hockey puk thyristors


    OCR Scan     		PDF i554S2 900PE, 700PE

    cti dro

    Abstract: S014B
    Text: SM J320C30, SM J320C31 DIGITAL SIGNAL PROCESSORS SG U S 014B - FEBRUARY 1991 - REVISED JUNE 1996 * -SS^C to Op er at i n g T emp er at u r e Range, QML P r o c e s s i n g • Two A d d r e s s G e n e r a t o r s With E i g h t A u x i l i a r y R e g i s t e r s and Two A u x i l i a r y


    OCR Scan     		PDF J320C30, J320C31 cti dro S014B

    MG15N6ES1

    Abstract: MG15N6ES
    Text: GTR MODULL SILICON N CHANNEL IGBT HIGH POWER S W I T C H I N G APP LI C AT IO NS . M OT OR C O NT RO L APPL IC AT I ON S. . The Electrodes are Isolated from Case . 6 IGBTs are Built-in to 1 Package. . Enhancement-Mode. . Low Saturation Voltage : v C E s a t = 5V ( M a x . ) (IC=15A)


    OCR Scan     		PDF MG15N6ES1 MG15N6ES1 MG15N6ES

    N4 TAM

    Abstract: No abstract text available
    Text: SGS-THOMSON TS3V904 OKDDtgMHILIKSTn^OR!] DCS 3V INPUT/OUTPUT RAI L TO RAIL QUAD OPERATIONAL AMPLIFIER WITH S T A N D B Y POSITION DEDICATED TO 3.3V OR BATTERY SU P PLY (specified at 3V and 5V) RAIL TO RAIL IN PU T AN D O U T P U T VO LTAG E R AN G E S


    OCR Scan     		PDF TS3V904 DIP16 N4 TAM

    Untitled

    Abstract: No abstract text available
    Text: Ti li Surging Ideas T V S Diode Application Note TEL: 805-498-2111 SI97-03 F A X : 805-498-3804 Calculating Clamping Voltage at Different Peak Pulse Currents Transient voltage suppressor data sheets define clamping voltage at a specified maximum peak pulse current level.


    OCR Scan     		PDF SI97-03 LC01-6 LC01-6 10/lOOOps

    CA3169

    Abstract: CA3242 CA3252 CA3262 CA3272
    Text: THOnSON/ DISTRIBUTOR SäE D • TD2bfl73 OGGSb'iB öQM « T C S K _ Automotive Circuits Quad-Gated Power Drivers For Interfacing Low -Level Logic to H ig h-C urren t Loads Electrical Characteristics at T a = 2 5 °C , V q C ~ 5V l+ Max. VCE sat (IC = 7 0 0 mA,


    OCR Scan     		PDF D2bfl73 100mA) 600mA) CA3262 CA3272* CA3242 80etation CA3169 O-220 Vcc-14V CA3252 CA3272

    Untitled

    Abstract: No abstract text available
    Text: /Z T S C S -T H O M S O N ÖMflD 0 ®[l[LIi®M R!lD®@ T S 3 V 902 3V INPUT/OUTPUT RAIL TO RAI L DUAL CMOS OPERATIONAL AMPLIFIER WITH S T A N D B Y POSITION) • DEDICATED TO 3.3V OR BATTERY SUPPLY (specified at 3V and 5V) ■ RAIL TO RAIL INPUT AND OUTPUT


    OCR Scan     		PDF 200fi

    20n60b3d

    Abstract: 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c
    Text: HARRIS IGBT PRODUCT LINE Selection Guide co co IGBTs co HARRIS IGBT PRODUCT LINE Continued Selection Guide NO TE S: 3 -4 1 • 'c 9 0 = m axim um continuous current rating at T c = +90°C. 2. ! q M = m axim um pulsed current rating. 3. t F m easured a t Tc = +150°C.


    OCR Scan     		PDF -220A 60B3D 20n60b3d 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c

    TIL702

    Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
    Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or


    OCR Scan     		PDF LCC4230-D EPN4050 TIL702 TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6

    TG12N60C3D

    Abstract: g12n60c3d TG12N60 g12n G12N60
    Text: HGTG12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .


    OCR Scan     		PDF HGTG12N60C3D 210ns HGTG12N60C3D TG12N60C3D g12n60c3d TG12N60 g12n G12N60