AT&T 100A Search Results

TRANSISTOR noise figure measurements

Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
Contextual Info: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER

RHRG3040

Abstract: 100ns RHRG1550CC RHRU100120 RHRD440 RHRD440S RHRD640 RHRD640S RHRP1540 RHRP3040
Contextual Info: 15A 30A 30A 50A 75A 50A 75A 100A S E M I C O N D U C T O R ITALICS = Future Product Offerings; VF at IF AVG , TJ = 25oC; TRR at IF(AVG), dIF/dt = 100A/µsec TJ = 25oC; † TRR at IF = 1A RHRP8120 RHRP15120 RHRP30120 RHRG30120 RHRG50120 RHRG75120 RHRU50120 RHRU75120 RHRU100120

Contextual Info: CFM 201S Series OPEN FRAME & ENCLOSED 2 0 0 W AT T S - A C / D C S I N G L E O U T P U T FEATURES • • • • • • Universal Input 90 ~ 264Vac Active PFC Meets EN61000-3-2 Conductive EMI Meets CISPR/FCC Class B High Efficiency at 92% Typical Remote Voltage Sense

MG25N1JS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG25N1JS1 HIGH POWER S W I T C H I N G A P P L I C AT ION S. M O T O R C O N T R O L A P P L I C AT ION S. . High Input Impedance . High Speed : tf= 1 . Ous M a x . t r r = 0 . 5 n s ( M a x .) . Low Saturation Voltage:

Q817C

Abstract: q817 DSS2-60AT2 IPS18 IPS-DK18 FERRITE core ee TRANSFORMER dss2 IPS18C 1N4148 1N4743A
Contextual Info: D E S I G N K I T / E VA L U AT I O N S Y S T E M – A P P L I C AT I O N T O O L B R I E F N E W A P P L I C A T I O N T O O L B R I E F IPS-DK18 / EVPS001 Schematic EI/EE CORE FERRITE TRANSFORMER 13MM L1 Design Kit and Evaluation System: 5W to 10W Ultra-Green Power Supply

ISO 7588

Contextual Info: Relay Products Shortform Catalog d broa y l e em extr ny n a a ffers on in m ive o s t i c , at at rodu applic , Altern Vehicle P y r er fo ela l nce TE R f relays Applia tive Pow ndustria eo t, I rna ets. rang t mark ve, Alte uipmen y Eq ren oti e ke diffe , Autom uilding e of th

DF378F

Abstract: DF103B NR231A rectifier three phase 40a alternator exploded view power circuit of three phase control rectifier HRP2540 washer lock Transient Voltage Suppression Devices, Harris
Contextual Info: HRP2540 S E M I C O N D U C T O R Power Rectifier/Power Surge Suppressor April 1995 Features Package • Low Forward Voltage Drop 1.1V Max at 100A JEDEC TO-220AB A • High Reverse Energy Capability K A • Controlled Maximum Avalanche Voltage (40V Max at 40A)

PHN174

Contextual Info: Fast R ecovery D io d es ~ Stud & flat base types Type V RRM ^F AV Range a t L ase W > M ax(at t case) I F Max. Typica R everse FRecovered Charge (at Tcase) and Typic:al Reverse Recovery (i Tj Max. 10m s (50% Chord) V r=s 60% 100°C ^FSM (1) ^RRM (Note 3)

100C

Abstract: VS21 lock washer .073
Contextual Info: Series 100A/C Sealed Miniature Toggle Switches SPECIFICATIONS: ( ql y //A C O N TA C T RATING: Refer to "Contact Material Options" for more info. ELECTRICAL LIFE: 50,000 m ake-and-break cycles at full load. C O N TA C T R ESISTANCE: 10m nm ax. initial @ 2-4V D C

Contextual Info: INT ERN AT IO NAL RECTIFIER 4T Dl F 4f i554S2 0004744 S Data Sh eet No. PD-3.067 IN T E R N A T IO N A L R E C T I F I E R I O R -r*ss-£Q 1410A, 1 100A RMS Hockey Puk Thyristors 900PE, 700PE SERIES Description The 700PE and 900 P E series o f converter type hockey puk thyristors

cti dro

Abstract: S014B
Contextual Info: SM J320C30, SM J320C31 DIGITAL SIGNAL PROCESSORS SG U S 014B - FEBRUARY 1991 - REVISED JUNE 1996 * -SS^C to Op er at i n g T emp er at u r e Range, QML P r o c e s s i n g • Two A d d r e s s G e n e r a t o r s With E i g h t A u x i l i a r y R e g i s t e r s and Two A u x i l i a r y

NE5534

Abstract: ne5534 application note decibel meter 2181C LF351 2181a compressor audio use transistor NE5534 applications 2180C 2181B
Contextual Info: T H AT Corporation APPLICATION NOTE 100A Basic Compressor/Limiter Design Abstract THAT Corporation’s 2252 RMS-Level Detector and 2180/2181 Series Voltage-Controlled Amplifiers VCAs are ideal basic building blocks for compressor/limiter designs. This application note

MG15N6ES1

Abstract: MG15N6ES
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT HIGH POWER S W I T C H I N G APP LI C AT IO NS . M OT OR C O NT RO L APPL IC AT I ON S. . The Electrodes are Isolated from Case . 6 IGBTs are Built-in to 1 Package. . Enhancement-Mode. . Low Saturation Voltage : v C E s a t = 5V ( M a x . ) (IC=15A)

N4 TAM

Contextual Info: SGS-THOMSON TS3V904 OKDDtgMHILIKSTn^OR!] DCS 3V INPUT/OUTPUT RAI L TO RAIL QUAD OPERATIONAL AMPLIFIER WITH S T A N D B Y POSITION DEDICATED TO 3.3V OR BATTERY SU P PLY (specified at 3V and 5V) RAIL TO RAIL IN PU T AN D O U T P U T VO LTAG E R AN G E S

g20n60b3d

Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060
Contextual Info: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC

Contextual Info: Ti li Surging Ideas T V S Diode Application Note TEL: 805-498-2111 SI97-03 F A X : 805-498-3804 Calculating Clamping Voltage at Different Peak Pulse Currents Transient voltage suppressor data sheets define clamping voltage at a specified maximum peak pulse current level.

CA3169

Abstract: CA3242 CA3252 CA3262 CA3272
Contextual Info: THOnSON/ DISTRIBUTOR SäE D • TD2bfl73 OGGSb'iB öQM « T C S K _ Automotive Circuits Quad-Gated Power Drivers For Interfacing Low -Level Logic to H ig h-C urren t Loads Electrical Characteristics at T a = 2 5 °C , V q C ~ 5V l+ Max. VCE sat (IC = 7 0 0 mA,

Contextual Info: /Z T S C S -T H O M S O N ÖMflD 0 ®[l[LIi®M R!lD®@ T S 3 V 902 3V INPUT/OUTPUT RAIL TO RAI L DUAL CMOS OPERATIONAL AMPLIFIER WITH S T A N D B Y POSITION) • DEDICATED TO 3.3V OR BATTERY SUPPLY (specified at 3V and 5V) ■ RAIL TO RAIL INPUT AND OUTPUT

decibel meter

Abstract: 2181C 2252 rms 2180C 2181B LF351 NE5534 LF351 OPERATION Signal Path designer
Contextual Info: Design Note 00A formerly Application Note 100A T H AT Corporation Basic Compressor/Limiter Design Abstract THAT Corporation’s 2252 RMS-Level Detector and 2180/2181 Series Voltage-Controlled Amplifiers (VCAs) are ideal basic building blocks for compressor/limiter designs. This application note

20n60b3d

Abstract: 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c
Contextual Info: HARRIS IGBT PRODUCT LINE Selection Guide co co IGBTs co HARRIS IGBT PRODUCT LINE Continued Selection Guide NO TE S: 3 -4 1 • 'c 9 0 = m axim um continuous current rating at T c = +90°C. 2. ! q M = m axim um pulsed current rating. 3. t F m easured a t Tc = +150°C.

TIL702

Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or

TG12N60C3D

Abstract: g12n60c3d TG12N60 g12n G12N60
Contextual Info: HGTG12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .

NZM7-40

Abstract: FAZ-XHI001 moeller nzm7 IEC 947-2 VDE 0660 100a vde 0636 AC-22B VDE 0660 iec 947-2 DC21B moeller MCB NZM7
Contextual Info: 12/037 Moeller HPL0211-2001/2002 FAZ tripping characteristics at 30 °C: R to IEC/EN 60 947 1.05 1.30 1.13 1.45 FAZ tripping characteristics at 30 °C: B, C, D to IEC/EN 60 898 Specified non-tripping current I nt = 1.13 ҂ I n for t > 1 h Specified tripping current

G20N60B3D

Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
Contextual Info: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated