IGBT THEORY AND APPLICATIONS 400V
Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
Text: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page
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AN-1086
1628/D.
IGBT THEORY AND APPLICATIONS 400V
TEK 370A
tesec
IGBT THEORY AND APPLICATIONS
bj transistor igbt
high voltage pnp transistor 700v
jfet curve tracer
short circuit tracer schematic
bipolar transistor tester
AN10861
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K1 transistor
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.
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FMMT413
J-STD-020
MILSTD-202,
DS33083
K1 transistor
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NT 407 F TRANSISTOR
Abstract: NT 407 F power transistor motorola bipolar transistor MJE8503A Motorola Bipolar Power Transistor Data bipolar transistor td tr ts tf
Text: MOTOROLA Order this document by MJE8503A/D SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
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MJE8503A/D
MJE8503A*
MJE8503A
MJE8503A/D*
NT 407 F TRANSISTOR
NT 407 F power transistor
motorola bipolar transistor
Motorola Bipolar Power Transistor Data
bipolar transistor td tr ts tf
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Untitled
Abstract: No abstract text available
Text: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)
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OCR Scan
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O-257
O-254
SNG30620
SNG30620A
SNG20640
SNG20648A
SNG40635
SNG40648A
SNG40660A
SNG40675
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transistor R2U
Abstract: SSTA63 marking B25 transistor b25
Text: PNP Darlington transistor Die no. B-25 These are epitaxial planar PNP silicon Darlington transistors. Features • Dimensions Units : mm SST3 available in a SST3 (SST, SOT-23) package, see page 300 • collector-to-emitter breakdown voltage, BVCES = 30 V (min)
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OCR Scan
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OT-23)
SSTA63
100MHz
200MHz
300MHz
transistor R2U
marking B25
transistor b25
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Untitled
Abstract: No abstract text available
Text: SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 Features 1 BVCES < 80V Ic=100µA) External dimensions (Unit : mm) SSTA28 2.9±0.2 MMSTA28 SMT3 RAT T146 3000 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Unit V V V A W
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SSTA28
MMSTA28
SSTA28
SC-59
OT-346
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INDUCTION HEATING
Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
Text: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)
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HGT1N30N60A4D
HGT1N40N60A4D
HGTP3N60C3
HGTP3N60C3D
SGP6N60UF
SGP6N60UFD
HGTP3N60B3
SGF23N60UFD
SGF15N60RUFD
SGF40N60UF
INDUCTION HEATING
induction heating ic
high power Induction Heating
FGK60N6S2D
HGT1S12N60C3S
SGS5N150UF
HGT1S5N120BNDS
SGS13N60UFD
SGH10N120RUF
HGT1N30N60A4D
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2N6718
Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
Text: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100
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O-237
2N6722
2N6723
TN2102
TN2219A
TN2905A
TN3019
TN3020
TN3053
TN3724
2N6718
2N6719
ATX smps troubleshooting
2N6714
2N6715
2N6716
2N6717
2N6720
2N6721
2N6722
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FGPF4633
Abstract: FGH40N60SFD fgpf50n33 FGA25N120 FGH60N60 fga70n33 fgd4536 FGH60N60SFD FGH40N60 fgh80n60
Text: FAIRCHILD IGBTs, JFETs and Power MOSFETs Products may be RoHS compliant. Check mouser.com for RoHS status. *Kinked Leads ♦ Surface Mount Device MOUSER STOCK NO. Mfr. For quantities greater than listed, call for quote. Package Mfr. Part No. BVCES IC Min V (A)
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O-220F
512-FGPF4633TU
512-FGD4536TM
512-HGTP7N60B3D
O-252
512-HGT1S20N60C3S9A
512-FGP20N60UFDTU
512-FGAF40N60UFDTU
FGPF4633
FGH40N60SFD
fgpf50n33
FGA25N120
FGH60N60
fga70n33
fgd4536
FGH60N60SFD
FGH40N60
fgh80n60
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transistor R2U
Abstract: transistor b25 B25-12 transistor
Text: PNP Darlington transistor Die no. B-25 Dimensions Units : mm These are epitaxial planar PNP silicon Darlington transistors. SST3 Features • • 1.9±0.Z available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCes = 30 V (min)
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OCR Scan
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OT-23)
SSTA63
transistor R2U
transistor b25
B25-12 transistor
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transistor 13003L
Abstract: APT13003LZ
Text: A Product Line of Diodes Incorporated Green APT13003L 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 0.8A high Continuous Collector Current Lead-Free Finish; RoHS Compliant Notes 1 & 2
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APT13003L
MIL-STD-202,
200mg
DS36306
transistor 13003L
APT13003LZ
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GU13005S
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green APT13005S 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 3.2A high Continuous Collector Current Lead-Free Finish; RoHS Compliant Notes 1 & 2
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APT13005S
O220F-3
MIL-STD-202,
400mg
340mg
O220F-3:
1500mg
DS36309
GU13005S
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green APT27 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 0.8A high Continuous Collector Current Lead-Free Finish; RoHS compliant Notes 1 & 2
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APT27
MIL-STD-202,
200mg
DS36301
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BC548 BH
Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) TYPE NO. BVCBO BVCEO BVEBO *BVCES ICBO @ *I CEV @ VCB (V) (V) (V) (V) (nA) MIN MIN MIN MAX hFE @ VCE @ IC (V) (mA) VCE (SAT) @ IC toff Cob fT (pF) (MHz)
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OT-23
350mW
CMPT8099
CMPT2222A
CMPT2222AE
CMPT3904
CMPT3904E
CMPT4401
BC548 BH
BC547
NPN Transistor BC547B
npn bc338 signal transistor
transistor MPSA77
BC546B SOT23 transistor
low noise pnp
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MMSTA28
Abstract: SSTA28 T116 T146
Text: SSTA28 / MMSTA28 Transistors NPN general purpose transistor SSTA28 / MMSTA28 zFeatures 1 BVCES < 80V Ic=100µA) zExternal dimensions (Unit : mm) SSTA28 2.9±0.2 MMSTA28 SMT3 RAT T146 3000 2.9±0.2 1.1 +0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 Unit V V V A
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SSTA28
MMSTA28
SSTA28
SC-59
OT-346
MMSTA28
T116
T146
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Untitled
Abstract: No abstract text available
Text: IGBT IGBT + SOFT RECOVERY/ULTRA FAST A.P. RECTIFIER PACKAGE TO-254 TO-258 DEVICE TYPE BVCES VOLTS SNGD20620 600 SNGD20620A tf * l rr * 1 Reverse Diode nsec VCE (sat) VOLTS nsec 20 2.6 570 130 75 600 20 3.1 310 130 75 SNGD20640 600 40 2.0 800 150 125 SNGD20648A
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OCR Scan
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SNGD20620
SNGD20640
SNGD21034
SNGD20648A
O-258
SNGD20620A
O-254
40A/nsec,
flZS40EE
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NPN EBC SOT-23
Abstract: SOT-23 EBC NPN transistor ECB TO-92
Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003
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PJP110A
O-220
PJP168A
PJ13003
PJ13005
PJ13007
NPN EBC SOT-23
SOT-23 EBC
NPN transistor ECB TO-92
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BUS47
Abstract: BUS47A
Text: MOTOROLA SC -CXSTRS/R 6 3 6 7 2 54 F3- "Tt MOTOROLA SC XSTRS/R D-E~Jt.3t.7a5M 98D 8 0 7 2 1 F - MOTOROLA NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS (BVCEOI 150 WATTS 850 - 1000 V (BVCES) The BUS 4 7 and BUS 4 7 A transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall
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OCR Scan
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Bb725M
BUS47
BUS47A
100Khz)
250Vdc,
30jis,
BUS47A
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bus98a
Abstract: BUS98 1N4937 BUV20 MJE200 MJE210 buv20 equivalent
Text: MOTOROLA Order this document by BUS98/D SEMICONDUCTOR TECHNICAL DATA Designer's BUS98 BUS98A Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850 – 1000 V (BVCES)
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BUS98/D*
BUS98/D
bus98a
BUS98
1N4937
BUV20
MJE200
MJE210
buv20 equivalent
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STGB3NB60SDT4
Abstract: No abstract text available
Text: £jj Low drop, standard speed IGBTs - frequency up to 1kHz Part number BVces M STGB3NB60SDT4 STGD3NB60SDT4 STGD3NB60SD-1 STGF7NB60SL STGP10NB60SFP STGF10NB60SD STGD7NB60ST4 STGB10NB60ST4 STGP10NB60S STGP10NB60SD STGF20NB60S STGW35NB60SD STGE200NB60S 600 600
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OCR Scan
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00Irt
stgb3nb60sdt4
stgd3nb60sdt4
stgd3nb60sd-1
stgf7nb60sl
to-220fp
stgp10nb60sfp
stgf10nb60sd
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SGL40N150
Abstract: SGH80N60UFD SGH40N60UFD IGBT Guide SGL60N90D F 10 L 600
Text: IGBT Selection Guide SAMSUNG IGBT • High Performance Low Vce(sat ,High Speed) - Power Conversion Application PKG DEVICE Bvces [V] Ic [A] Vce(s)[V] (Min.) (Tc=100°C) (Typ.) Tf [ns] (Typ.) D-PAK SGR6N60UF 600 3 2.1 80 D2- PAK SGW6N60UF 600 3 2.1 80 SGW13N60UF
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OCR Scan
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SGR6N60UF
SGW6N60UF
SGW13N60UF
SGW23N60UF
O-220
SGP6N60UF
SGP13N60UF
SGP23N60UF
SGP40N60UF
SGH40N60UF
SGL40N150
SGH80N60UFD
SGH40N60UFD
IGBT Guide
SGL60N90D
F 10 L 600
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JE8503
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 6.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
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OCR Scan
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JE8503A*
MJE8503A
MJE8503A
JE8503
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Transistor 3-354
Abstract: TRANSISTOR 3356 BUS98 BUS96 ad 142 transistor bus98a C 3355 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850-1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high-voltage, high-speed,
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OCR Scan
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BUS98
BUS98A
BUS98A
Transistor 3-354
TRANSISTOR 3356
BUS96
ad 142 transistor
C 3355 transistor
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BD139 fall time
Abstract: TRANSISTOR REPLACEMENT GUIDE transistor cross reference BUS98 2n3055 motor control circuits BU108 MJ10021 equivalent buv48 equivalent MJ2268 Motorola transistors MJE1100 TO 127
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 850 – 1000 V (BVCES) The BUS98 and BUS98A transistors are designed for high–voltage, high–speed,
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BUS98
BUS98A
BUS98A
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
BD139 fall time
TRANSISTOR REPLACEMENT GUIDE
transistor cross reference
2n3055 motor control circuits
BU108
MJ10021 equivalent
buv48 equivalent
MJ2268
Motorola transistors MJE1100 TO 127
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