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    AS29F Search Results

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    Adam Technologies Inc SAS-29-F-VSMT-LK

    I/O Connectors CONNECTOR, SAS CONNECTOR
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    Adam Technologies Inc SAS-29-F-VT-DR-A

    I/O Connectors CONNECTOR, SAS CONNECTOR
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    Mouser Electronics SAS-29-F-VT-DR-A
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    Adam Technologies Inc SAS-29-F-VT-LK

    I/O Connectors CONNECTOR, SAS CONNECTOR
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    Mouser Electronics SAS-29-F-VT-LK
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    Adam Technologies Inc SAS-29-F-VT

    I/O Connectors CONNECTOR, SAS CONNECTOR
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    Mouser Electronics SAS-29-F-VT
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    Adam Technologies Inc SAS-29-F-VT-DR-B

    I/O Connectors CONNECTOR, SAS CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SAS-29-F-VT-DR-B
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    AS29F Datasheets (199)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AS29F002B-120LC Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-120PC Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-120PI Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-120SC Alliance Semiconductor EEPROM Parallel Async Original PDF
    AS29F002B-120T1C Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-120T1I Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-120TC Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-120TI Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-55LC Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-55PC Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-55T1C Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-55TC Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-70LC Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-70LI Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-70PC Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-70PI Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-70SC Alliance Semiconductor EEPROM Parallel Async Original PDF
    AS29F002B-70T1C Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-70T1I Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    AS29F002B-70TC Alliance Semiconductor 5V 256 x 8 CMOS Flash EEPROM Original PDF
    ...

    AS29F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    29F002

    Abstract: A1317 AS29F002B-120SC
    Text: High Performance 256Kx8 5V CMOS Flash EEPROM AS29F002 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)


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    PDF AS29F002 29F002 A1317 AS29F002B-120SC

    Untitled

    Abstract: No abstract text available
    Text: FLASH AS29F040 Austin Semiconductor, Inc. 512K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS A18 A16 A15 A12 A7 A6 A5


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    PDF MIL-STD-883 AS29F040 32-PIN 150ns AS29F040DCG-55/Q AS29F040DCG-60/Q AS29F040DCG-70/Q AS29F040DCG-90/Q

    smd diode marking a4h

    Abstract: 32-PIN AS29F040 5962-9669203HUA
    Text: FLASH AS29F040 Austin Semiconductor, Inc. 512K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS A18 A16 A15 A12 A7 A6 A5


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    PDF AS29F040 32-PIN MIL-STD-883 150ns F040DCG-55/Q AS29F040DCG-60/Q AS29F040DCG-70/Q AS29F040DCG-90/Q smd diode marking a4h AS29F040 5962-9669203HUA

    smd diode marking a4h

    Abstract: 5962-9669204HUA AS29F040ECA a4h smd AS29F040 cross reference SMD MARKING CODE A12 32-PIN AS29F040 5962-9669204H
    Text: FLASH AS29F040 512K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2


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    PDF AS29F040 32-PIN MIL-STD-883 150ns protDCG-55/Q AS29F040DCG-60/Q AS29F040DCG-70/Q AS29F040DCG-90/Q smd diode marking a4h 5962-9669204HUA AS29F040ECA a4h smd AS29F040 cross reference SMD MARKING CODE A12 AS29F040 5962-9669204H

    AS29F010

    Abstract: Flash 32-PIN 5962-9669002HYA as29f010cw-70
    Text: FLASH AS29F010 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMO- 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7


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    PDF AS29F010 32-PIN MIL-STD-883 16Kbyte AS29F010 Flash 5962-9669002HYA as29f010cw-70

    1702 eprom programmer

    Abstract: TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702
    Text: High Performance 512Kx8 5V CMOS Flash EEPROM AS29F040 512K×8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512K×8 • Sector architecture - 30 mA maximum read current - 60 mA maximum program current - 50 µA typical standby current


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    PDF AS29F040 32-pin 1702 eprom programmer TAA 761 A HV Component Associates 512K8 1702 eprom 1702 EPROM data sheet AS29F040-120LC as29f040-55lc AS29F040-70LC eprom 1702

    29f400

    Abstract: flash 29f400 1702 eprom MD 202 1702 eprom programmer AN 5011 P HV Component Associates 512KO J-Squared Technologies 29F400-90
    Text: High Performance 512Kx8/256K×16 5V CMOS Flash EEPROM AS29F400 512K×8/256K×16 CMOS Flash EEPROM Preliminary information Features • Organization: 512K×8 or 256K×16 • Sector architecture • Low power consumption - 35 mA maximum read current - 60 mA maximum program current


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    PDF 8/256K AS29F400 48-pin 44-pititute 29f400 flash 29f400 1702 eprom MD 202 1702 eprom programmer AN 5011 P HV Component Associates 512KO J-Squared Technologies 29F400-90

    Untitled

    Abstract: No abstract text available
    Text: High performance 1Mx8 5V CMOS Flash EEPROM AS29F080 1 Megabit×8 CMOS Flash EPROM Preliminary information Features • Organization: 1M×8 • Sector architecture • Low power consumption - 30 mA maximum read current - 50 mA maximum program current - 1 µA typical standby current RESET = 0


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    PDF AS29F080 40-pin 44-pin 40-pin AS29F080-55TC AS29F080-70TC AS29F080-70TI AS29F080-90TC AS29F080-90TI AS29F080-120TC

    Untitled

    Abstract: No abstract text available
    Text: FLASH AS29F040 Austin Semiconductor, Inc. 512K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS A18 A16 A15 A12 A7 A6 A5


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    PDF MIL-STD-883 AS29F040 32-PIN 150ns AS29F040CW-90/Q AS29F040CW-120/Q AS29F040CW-150/Q 5962-9669204HXA

    smd a5

    Abstract: AS29F010D
    Text: FLASH AS29F010 Austin Semiconductor, Inc. 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMORY 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690


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    PDF MIL-STD-883 AS29F010 32-PIN 16Kbyte impleme5962-9669004HYA 5962-9669003HYA 5962-9669002HYA 5962-9669001HYA smd a5 AS29F010D

    32-PIN

    Abstract: AS29F010
    Text: FLASH AS29F010 128K x 8 FLASH PIN ASSIGNMENT Top View UNIFORM SECTOR 5.0V FLASH MEMO- 32-PIN Ceramic DIP (CW) 32-pin Flatpack (F) 32-pin Lead Formed Flatpack (DCG) AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883 • SMD 5962-96690 NC A16 A15 A12 A7


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    PDF AS29F010 32-PIN MIL-STD-883 16Kbyte secto62-9669004HUA 5962-9669003HUA 5962-9669002HUA 5962-9669001HUA AS29F010

    7 segment display 5611

    Abstract: 29F010 single 7 segment display 5611 9224 AS29F011 HV Component Associates taa 723 uA 723 h AS29F010 29F010-70
    Text: High Performance 128Kx8 CMOS Flash EEPROM AS29F010 AS29F011 5V 128K×8 CMOS Flash Memory FEATURES • Organization:131,072 words × 8 bits • JEDEC standard write cycle commands • Sector Erase architecture – protects data from accidental changes – Four 32K × 8 sectors


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    PDF AS29F010 AS29F011 32-pin 7 segment display 5611 29F010 single 7 segment display 5611 9224 AS29F011 HV Component Associates taa 723 uA 723 h AS29F010 29F010-70

    datasheet 29f200

    Abstract: 8282 ADDRESS LATCH HV Component Associates 29f200-90 AS29F200T
    Text: High Performance 256Kx8/128×16 5V CMOS Flash EEPROM AS29F200 2 Megabit 5V CMOS Flash EEPROM Preliminary information Features • Organization: 256K×8 or 128K×16 • Sector architecture • Low power consumption - One 16K; two 8K; one 32K; and three 64K byte sectors


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    PDF AS29F200 datasheet 29f200 8282 ADDRESS LATCH HV Component Associates 29f200-90 AS29F200T

    Device-List

    Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
    Text: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera


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    PDF LabTool-48 AC29LV400B AC29LV400T M6759 M8720 AS29F040 Device-List NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)


    OCR Scan
    PDF AS29F200 256KX8/128Kx 256Kx8 AS29F200B-70TC AS29F200B-70TI AS29F200T-70TC AS29F200T-70TI AS29F200B-70SC AS29F200B-70SI AS29F200T-70SC

    A1317

    Abstract: AS29 120PI
    Text: Preliminary information •■ AS29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )


    OCR Scan
    PDF AS29F002 256KX8 256Kx8 mo2B-120T1C AS29F002B-120T1I AS29F002T1-120T1C AS29F002T1-120T1I 32-pin AS29F002B-55PC AS29F002B-70PC A1317 AS29 120PI

    ITT 435

    Abstract: .5555b 29F002 18-SO AS29 a37al 1L400 29F002-S5 itt435 120PI
    Text: « H ig h p e rfo rm a n ce 256K X 8 5 V CMOS Flash EEPROM AS29F002 A 2J>6Kx8 CMOS Flash EEPROM Prelim inary inform ation Features • O r g a n iz a tio n : 2 5 6 K x 8 • S e c to r a r c h ite c tu r e - O n e 16K; tw o 8K; o n e 32K ; a n d th re e 64K b y te secto rs


    OCR Scan
    PDF AS29F002 Z56KX8 256KX8 256Kx8 HardwS29F002TI -I20T1I 32-pin AS29F002B-S5PC AS29F002B-70PC AS29F002B-70PI ITT 435 .5555b 29F002 18-SO AS29 a37al 1L400 29F002-S5 itt435 120PI

    29f200-90

    Abstract: 29F200 flash tcp 8111 D370 344c1 es 3880 fm AS29F200T
    Text: H igh Performance 256K x8/128 « I6 X AS29F200 Kl SV CMOS Flash FFPROM 2 M e g a b i t 5 V CMOS i-lash EEPROM Preliminary information Features • O rg a n iza tio n : 25 6 K x 8 o r 1 2 8 K x l 6 • Sector a rch itectu re - O n e 1 6K ; tw o 8K ; o n e 3 2 K ; a n d th r e e 6 4 K b y te s e c to rs


    OCR Scan
    PDF AS29F200 256Kx8/128 128Kxl6 29f200-90 29F200 flash tcp 8111 D370 344c1 es 3880 fm AS29F200T

    Untitled

    Abstract: No abstract text available
    Text: High Performance 512KX8 / 2 5 6 KX16 5V CMOS Flash EEPROM •■ | | AS29F400 II 5 Ï2 K X 8 /2 5 6 K X 1 6 CMOS Flash EEPROM Preliminary information Features • O rg a n iza tio n : 5 1 2 K X 8 o r 2 5 6 K x l 6 • L o w p o w e r c o n s u m p tio n


    OCR Scan
    PDF 512KX8 AS29F400 -90SI -120SI S29F400B -150SC 29F400B -150SI 29F400T-70SC S29F400T

    Untitled

    Abstract: No abstract text available
    Text: High Performance 128Kx8 CMOS Flash KEPROM II AS29F010 AS29F011 5 \ 128KxX CMOS Flash Memory FEATU RES • Organization: 131,072 words x 8 bits • JEDEC standard write cycle commands • Sector Erase architecture - protects data from accidental changes - Four 32K x 8 sectors


    OCR Scan
    PDF 128Kx8 AS29F010 AS29F011 128KxX 32-pin 0DDD337

    ym 238

    Abstract: hy 214 29F002
    Text: H ig h P e rfo rm a n ce « 256K X 8 AS29F002 II 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash FEPROM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 35 m A m a x im u m read current


    OCR Scan
    PDF AS29F002 256KX8 256Kx8 ym 238 hy 214 29F002

    AS4C1M16FS

    Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
    Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423


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    PDF AS29F002 j4S29F03 AS29F040 AS29F080 AS29F200 AS29F400 AS291X008 AS29LL800 AS29LV002 AS29LV008 AS4C1M16FS 1Mx16 flash 3.3v 1Mx8 SRAM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29F080 A 5V 1Mx 8 CM O S Flash EEPROM Features • Organization: 1Mx 8 • Sector architecture - Sxteen 64Kbyte sectors - Equal sector architecture - Erase any combination o f sectors or full chip • Sngle 5.0±0.5V pow er supply for read/ write operations


    OCR Scan
    PDF AS29F080 64Kbyte 10x20 40-pin AS29K 80-55TC 80-70TC 80-70T[

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29F040 5V 512Kx8 CM OS Flash EE PROM Features • Organization: 51 2 K x8 • Sector architecture - Eight 64K byte sectors - Erase any com bination of sectors or full chip • Single 5.0 ± 0 .5 V pow er supply for read/w rite operations


    OCR Scan
    PDF AS29F040 512Kx8 32-pin AS29F040-55TC AS29F040-55TI AS29F040-70TC AS29F040-70TI AS29F040-90TC AS29F040-90TI AS29F040-120TC