AOT-0603P-B01A
Abstract: AOT-0603P-B01AZ AOT0603P-B01-V 10E10 10E4 10E6 10E8 3050B aot-0603p diode 47-16
Text: APPROVAL SHEET AOT MODEL NAME AOT PART NUMBER CUSTOMER NAME DATE VERSION MAKER Prepared SMD LED : Blue Color AOT-0603P-B01AZ General Customer 2005/June 2 CUSTOMER Checked Approved AOT HEAD QUARTER No. 13, Gongye 5th. Road, Hsinchu Industrial Park, Hukou Shiang,
|
Original
|
AOT-0603P-B01AZ
2005/June
AOT-0603P-B01A
AOT-0603P-B01AZ
AOT0603P-B01-V
10E10
10E4
10E6
10E8
3050B
aot-0603p
diode 47-16
|
PDF
|
AOT260L
Abstract: No abstract text available
Text: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of
|
Original
|
AOT260L/AOB260L
O-263
AOT260L
|
PDF
|
aot 128
Abstract: No abstract text available
Text: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of
|
Original
|
AOT260L/AOB260L
O-263
aot 128
|
PDF
|
AOB260L
Abstract: No abstract text available
Text: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of
|
Original
|
AOT260L/AOB260L
O-263
AOB260L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of
|
Original
|
AOT260L/AOB260L
|
PDF
|
AOT 127A
Abstract: aot 127 aot 128 AOT474 AOTF474
Text: AOT474/AOTF474 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOT F 474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low R DS(ON) and excellent
|
Original
|
AOT474/AOTF474
474/L
O220FL
474/AOT
OTF474
AOT 127A
aot 127
aot 128
AOT474
AOTF474
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TRM5712AN OC-12 Transmitter Description The TRM5712AN is a lightwave transmitter for OC-12. Features • Complied with SONET/SDH standard • Fabry-Perot laser diode • Operation from IMb/s to 622.08Mb/s at 1.3 |am wavelength • 50Î2, AC-coupled interface
|
OCR Scan
|
TRM5712AN
OC-12
TRM5712AN
OC-12.
08Mb/s
|
PDF
|
BUZ24
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor • • • BUZ 24 N channel Enhancem ent mode Avalanche-rated Type In s BUZ 24 100 V I 'd 32 A ^DS on P a c k a g e 1> Ordering Code 0.06 i i TO-204 AE C 67078-S 1003-A2 Maxim um Ratings Sym bol Parameter Continuous drain current, Tc = 27 "C
|
OCR Scan
|
O-204
67078-S
1003-A2
BUZ24
BUZ24
|
PDF
|
TDA 4400
Abstract: TDA4400 4410 Demodulator 4410 8 pin TC 4410 TDA4410 tda video
Text: TDA 4400 • TDA 4410 'W Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendungen: Bild-ZF-Verstärker für Farb- und Schwarz-Weiß-Fernsehempfänger TDA 4400 bei PNP-Tunern TDA 4410 bei NPN-Tunern Applications: Video IF-amplifier for colour and monochrome television receivers.
|
OCR Scan
|
|
PDF
|
transistor marking YD ghz
Abstract: EHT07317
Text: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,
|
OCR Scan
|
Q62702-F1215
P-SOT143-4-1
EHT07327
transistor marking YD ghz
EHT07317
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Infineon b i i c l ü ç i i es P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz jp = 0.55 dB; Ga - 15.7 dB @ 3 V; 1 0 m A ;/= 1.8 GHz • Suitable for PCS CDMA and UMTS applications
|
OCR Scan
|
P-SOT343-4-1
Q62702-G0116
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P re lim ina ry Spec MITSUBISHI LSIs MH1 V645C W XPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard
|
OCR Scan
|
V645C
4194304-BIT
1048576-BIT
64-BIT)
1Mx64bit
1048576-word
64-bit
MIT-DS-0030-1
24/Mar
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PACIFIC DISPLAY DEVICES LCD Component Data Sheet Model Number: 12864-15 128 x 64 Dot COG X-FSTN Graphic LCD Assembly With SSD-1805 Graphic Controller SPI Serial Interface Only LED or EL Panel Backlighting Option CONTENTS 1. GENERAL INFORMATION 1.1 1.2 1.3
|
Original
|
SSD-1805
|
PDF
|
bosch Knock sensor
Abstract: cc196 CC195 bosch Knock cc196 CC195 Knock Sensor IC bosch piezoelectric sensor bosch cc195 bosch Knock sensor CC196 bosch window motor knock sensor Bosch
Text: 20-PPR-1999 CC195 16:33 FROM BOSCH SAT SALES TO 901132799527 P. 02 Specification English extract CC195 Knock Sensor IC Specification Version 6.9a This specification is the property of Bosch and must be maintained in confidence and not discfoeed to others without the prior written consent of Bosch. Bosch makes no warranties
|
OCR Scan
|
20-PPR-1999
CC195
CC195
4JL25
FM-13.
S15kHz
dB12kHz
816kHz
24kHz
bosch Knock sensor
cc196
bosch Knock cc196
CC195 Knock Sensor IC
bosch piezoelectric sensor
bosch cc195
bosch Knock sensor CC196
bosch window motor
knock sensor Bosch
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: HOLTEK n r HT27C010 OTP CMOS 128Kx8-Bit EPROM Features • • • • • • • O perating voltage: +5.0V P rogram m ing voltage - Vpp=12.5V±0.2V - Vcc=6.0V±0.2V H igh-reliability CMOS technology L atch-up im m unity to 100mA from -1.0V to Vcc+l.OV CMOS an d TTL com patible I/O
|
OCR Scan
|
HT27C010
128Kx8-Bit
100mA
-70ns,
-90ns
-120ns
32-pin
|
PDF
|
VOGT p8
Abstract: tic 2160 triac kaschke fi 270 uaa145 EQUIVALENT UAA145 "direct replacement" TDA1086T telefunken transistor Kaschke Components CQY40 UAA146
Text: Allgemeines General Seite Page • H I Schaltungen fur Rundfunkempfanger Circuits for radio receivers Seite Page Schaltungen fur die Signalverarbeitung in Fernsehempfangern Circuits for the signal processing in television receivers Seite ■ Page ■ Schaltungen fur Bedienungssysteme in Rundfunk- und
|
OCR Scan
|
|
PDF
|
VQ25
Abstract: IC CHIP 5270 SN54ABT540 SN74ABT540
Text: SN54ABT540, SN74ABT540 OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS SCBS188A- FEBRUARY 1991 - REVISED JULY 1994 State-of-the-Art EPIC-llB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds
|
OCR Scan
|
SN54ABT540,
SN74ABT540
SCBS188A-
MIL-STD-883C,
JESD-17
-32-mA
Ioh-64-mA
SN54ABT540.
SN74ABT540
VQ25
IC CHIP 5270
SN54ABT540
|
PDF
|
Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM65511 OKI ORIGINAL HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION M S M 6 5 5 1 1 is a high-performance 8-bit single-chip controller that employs Oki's original nX-8/50 CPU core. W ith a minimum instruction execution time of 400 ns 10M Hz dock , the M S M 6 5 5 1 1 is
|
OCR Scan
|
MSM65511
nX-8/50
MSM65P512,
16-bit
|
PDF
|
H21LO
Abstract: No abstract text available
Text: HM5113165 Series 128M EDO DRAM 8-Mword x 16-bit 4k refresh HITACHI ADE-203-838B(Z) Rev. 2.0 Jul. 10, 1998 Description The Hitachi HM5113165 Series is 128M-bit dynamic RAM organized as 8,388,608-word x 16-bit. It has realized high performance and low power by employing CMOS process technology. HM5113165 Series
|
OCR Scan
|
HM5113165
16-bit)
ADE-203-838B
128M-bit
608-word
16-bit.
50-pin
40HITACHI
H21LO
|
PDF
|
TI-907
Abstract: TI907 N80C51BH LS001323
Text: ADVANCED MICRO DEVICES 13E D o E 5 7 5 E S QGETlSfl 1 | 8 0 C 51B H /8 0 C 31BH CMOS Single-Chip Microcontroller DISTINCTIVE CHARACTERISTICS • • • • • • CMOS versions of 8051 and 8031 80C51 = 80C31 + 4K bytes ROM 128 bytes of RAM 32 programmable I/O lines
|
OCR Scan
|
oE575ES
80C51BH/80C31BH
80C51
80C31
16-bit
80C51
80C31
2TCLCL-117
10TCLCL-133
WF020900
TI-907
TI907
N80C51BH
LS001323
|
PDF
|
cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
|
OCR Scan
|
AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LTC3452 Synchronous Buck-Boost MAIN/CAMERA White LED Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO High Efficiency: ≥85% Over Entire Li-Ion Battery Range Wide VIN Range: 2.7V to 5.5V Independent MAIN/CAMERA Current Control
|
Original
|
LTC3452
425mA
20-Lead
LT3466
LT3479
3452f
|
PDF
|
AOT-2015
Abstract: CD 5888 ic power bank high power white led driver circuit diagram LTC3452 aot 128 Edd 44 jedec package MO-220 LED power INDUCTOR tdk BOBBIN
Text: LTC3452 Synchronous Buck-Boost MAIN/CAMERA White LED Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO High Efficiency: ≥85% Over Entire Li-Ion Battery Range Wide VIN Range: 2.7V to 5.5V Independent MAIN/CAMERA Current Control
|
Original
|
LTC3452
425mA
20-Lead
LT3466
LT3479
3452f
AOT-2015
CD 5888 ic
power bank
high power white led driver circuit diagram
LTC3452
aot 128
Edd 44
jedec package MO-220
LED power INDUCTOR
tdk BOBBIN
|
PDF
|
A76 battery
Abstract: TC514100APL ZIP20-P-400A
Text: 4,194,30^ W O R D X 1 BIT D Y N A M IC RA M This is advanced information and specifica tions are subject to change without notice. * D ESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as
|
OCR Scan
|
TC514100APL/AJL/ASJL/AZL
300/350mil)
TC514100APL/AJL/ASJL/AZL.
a512K
TC5141OOAPL/A
L/AZL-60
A76 battery
TC514100APL
ZIP20-P-400A
|
PDF
|
