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    10E6 Search Results

    10E6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK110E65Z Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOSⅥ Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    467-5010-E64 Amphenol Communications Solutions VHDM-HSD™, Backplane connectors, Vertical Orientation, Press Fit Termination, 5 Row HSD, 10 positions, right, E-Key, 5.15mm (0.202in), Header. Visit Amphenol Communications Solutions
    467-8110-E64 Amphenol Communications Solutions VHDM-HSD™, Backplane connectors, Vertical Orientation, Press Fit Termination, 5 Row HSD, 10 positions, left, adv mate, E-Key, 5.15mm (0.202in), Header. Visit Amphenol Communications Solutions
    492-5110-E62 Amphenol Communications Solutions VHDM-HSD™, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row HSD, 10 positions, left, E-Key, 6.25mm (0.246in), Header. Visit Amphenol Communications Solutions
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    10E6 Price and Stock

    Infineon Technologies AG BGSA14M3N10E6327XTSA1

    RF SWITCH SP4T
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    DigiKey BGSA14M3N10E6327XTSA1 Cut Tape 12,000 1
    • 1 $0.54
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    BGSA14M3N10E6327XTSA1 Digi-Reel 12,000 1
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    • 100 $0.2932
    • 1000 $0.24935
    • 10000 $0.23181
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    BGSA14M3N10E6327XTSA1 Reel 12,000 12,000
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    Avnet Americas BGSA14M3N10E6327XTSA1 Reel 12,000 12 Weeks 12,000
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    Mouser Electronics BGSA14M3N10E6327XTSA1 11,975
    • 1 $0.54
    • 10 $0.377
    • 100 $0.294
    • 1000 $0.25
    • 10000 $0.232
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    Infineon Technologies AG BGS22W2L10E6327XTSA1

    IC RF SWITCH DPDT 2GHZ TSLP10-1
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    DigiKey BGS22W2L10E6327XTSA1 Cut Tape 8,203 1
    • 1 $0.65
    • 10 $0.505
    • 100 $0.4239
    • 1000 $0.38044
    • 10000 $0.36937
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    BGS22W2L10E6327XTSA1 Reel 7,500 7,500
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    EBV Elektronik BGS22W2L10E6327XTSA1 143 Weeks 7,500
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    Infineon Technologies AG BGSC2341ML10E6327XTSA1

    ANTENNA DEVICES PG-TSLP-10
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    DigiKey BGSC2341ML10E6327XTSA1 Cut Tape 6,629 1
    • 1 $0.72
    • 10 $0.512
    • 100 $0.4022
    • 1000 $0.34486
    • 10000 $0.33054
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    BGSC2341ML10E6327XTSA1 Digi-Reel 6,629 1
    • 1 $0.72
    • 10 $0.512
    • 100 $0.4022
    • 1000 $0.34486
    • 10000 $0.33054
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    Rochester Electronics BGSC2341ML10E6327XTSA1 433,871 1
    • 1 $0.3208
    • 10 $0.3208
    • 100 $0.3016
    • 1000 $0.2727
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    KEMET Corporation T510E687M006ATE012

    CAP TANT 680UF 20% 6.3V 2924
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    DigiKey T510E687M006ATE012 Cut Tape 1,402 1
    • 1 $13.37
    • 10 $10.134
    • 100 $8.1221
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    T510E687M006ATE012 Digi-Reel 1,402 1
    • 1 $13.37
    • 10 $10.134
    • 100 $8.1221
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    T510E687M006ATE012 Reel 1,000 500
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    TTI T510E687M006ATE012 Reel 1,000 500
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    ComSIT USA T510E687M006ATE012 365
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    Avnet Abacus T510E687M006ATE012 Reel 12 Weeks 500
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    SOURIAU-SUNBANK UTS6JC10E6P

    CONN PLUG MALE 6P GOLD SLDR CUP
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    DigiKey UTS6JC10E6P Bag 170 1
    • 1 $27.06
    • 10 $22.998
    • 100 $19.5504
    • 1000 $17.45428
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    RS UTS6JC10E6P Bulk 22 1
    • 1 $26.16
    • 10 $24.06
    • 100 $20.92
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    TTI UTS6JC10E6P Each 25
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    • 1000 $16.91
    • 10000 $16.58
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    Interstate Connecting Components UTS6JC10E6P 22
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    UTS6JC10E6P
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    10E6 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10E6 Nihon Inter Electronics 600 V, diode Original PDF
    10E6 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    10E6 Nihon Inter Electronics SILICON RECTIFIER DIODE Scan PDF

    10E6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10E6

    Abstract: No abstract text available
    Text: s DIODE 10E6 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage


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    DIODE GOC 24

    Abstract: DIODE GOC 15 PM7A 731 zener diode DIODE GOC 23 RECTIFIER DIODES Motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Hybrid Power Module M H PM 7A 10E60D C 3 Integrated Power Stage for 230 VAC Motor Drive Motorola Preferred Device Th is V e rsaP ow er module integrates a 3 -p h a se inverter, 3 -p h a se rectifier, brake, and temperature se n se in a single


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    1250C, BAV99LT1 MHPM7A10E60DC3 DIODE GOC 24 DIODE GOC 15 PM7A 731 zener diode DIODE GOC 23 RECTIFIER DIODES Motorola PDF

    10E8

    Abstract: No abstract text available
    Text: A. Material is .018" 0.46mm thick, red static dissipative vinyl. Surface resistance on both sides is 10E6 - 10E8 ohms, per ANSI/ESD S4.1 B. Two ground points, 10mm (.395") female sockets, riveted to material. C. Common point ground cord, with 1 megohm resistor, 15'


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    101C-4046 TB-2011. 10E8 PDF

    66200

    Abstract: No abstract text available
    Text: Color Dissipative Top Layer Description: Dual Layer mat is a .060" thick, 2-layer, dissipative dual layer rubber material. It is designed to provide a path to ground and eliminate static charge generation when used as Made in the United States of America a worksurface table mat, shelf liner, and cart liner. The surface resistance 1 x 10E6 < 1


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    D-3575

    Abstract: FED-STD-101 10E8 1021BA D3575-91 D3575
    Text: - Features - • Portable ESD worksurface that can also be used to transport populated, unsoldered circuit boards - • Static dissipative foam RTT 10E6 - 10E8 ohms laminated to Protektive Pak impregnated corrugated material for greater durability


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    D3575-91 DS111-1993 1021BA D2575-91 D-3575 FED-STD-101 10E8 1021BA D3575 PDF

    12100

    Abstract: NA 36 foam STM11
    Text: Description: Desco’s conductive foam is a non-abrasive, open-cell closed cell in cross linked polyurethane foam compounded for permanent ESD Control Properties. The black conductive foam’s Rtt range of 10E3 to 10E6 allows it to be used with ESD susceptible products. Desco’s conductive foam is available in 3 designs:


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    10E8

    Abstract: No abstract text available
    Text: Description: 0.125" Desco’s Statfree J material is a 0.125" thick, dissipative cellular foam rubber. It is designed to provide a path to ground and eliminate static charge generation when used as a worksurface table mat, shelf liner, and cart liner. The surface resistance 10E6 - 10E8 ohms Rtt meets ANSI/


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    techn00 PM-114 10E8 PDF

    10E6

    Abstract: No abstract text available
    Text: s DIODE 10E6 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage


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    TLC2425

    Abstract: TLE24251
    Text: TLE2425, TLE2425Y PRECISION VIRTUAL GROUNDS SLOSD65B - MARCH 1991 - REVISED AUGUST 1995 Excellent Regulation Characteristics - Output Regulation -4 5 nV Typ at l0 = 0 to -1 0 mA +15 nV Typ at Iq - 0 to +10 mA - Input Regulation = 1.5 ¿iV/V Typ Low-lmpedance Output. . . 0.007512 Tÿp


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    TLE2425, TLE2425Y SLOSD65B O-226AA TLE2425 prec065B VCM83 20MEG 25KEG 030E3 TLC2425 TLE24251 PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high


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    MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G OD-123 MBR0540T1/D PDF

    FED-STD-101

    Abstract: No abstract text available
    Text: Features • • • • • • Made in America Item No. D SPECIFICATIONS Properties Electrostatic Decay Surface Resistance Surface Resistance, Low R.H. Cut-off High-Voltage Discharge Resistance Static Shielding Charged Device Model CDM Safety Corrosivity


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    2002/95/EC FED-STD-101, D4060 CS-17 FED-STD-101 PDF

    NRVBS2040LT3G

    Abstract: 403A-0 MBRS2040LT3G
    Text: MBRS2040LT3G, NRVBS2040LT3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation


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    MBRS2040LT3G, NRVBS2040LT3G AEC-Q101 MBRS2040LT3/D 403A-0 MBRS2040LT3G PDF

    RC14M30K

    Abstract: RM20M12K UTS712D10P32 souriau 841 UTS7142G1P UTS0124P UTS78D4P32 UTS61412S AWG 24 multi strand copper wire UTS6JC147S
    Text: UTS Series Dynamic IP68/69K • UV Resistant • UL/IEC Compliant Overview UTS Series Cable assembly . 14 2 contacts . 20 2 + ground contacts . 28


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    IP68/69K SL105. sl46D2. INDUTSCA07EN RC14M30K RM20M12K UTS712D10P32 souriau 841 UTS7142G1P UTS0124P UTS78D4P32 UTS61412S AWG 24 multi strand copper wire UTS6JC147S PDF

    10E5-10E6

    Abstract: FTMS-101C
    Text: Manufacturer of ESD Static Control Products Part Number: 73774 SMOCK, STATSHIELD, JACKET, CUFFS, BLUE, 6XLARGE • RTG < 3.5 x 10E7 ohms meets required limit of ANSI/ESD S20.20-2007 Groundable Static Control Garment System tested per ANSI/ESD STM2.1 and ESD TR53


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    2-year/100 101C/4046 10E5-10E6 FTMS-101C PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC2210 Micrel MIC2210 Dual µCap LDO with Open-Drain Driver Final General Description Features The MIC2210 is a dual µCap low dropout regulator with an open-drain driver and power-on reset circuit. The first regulator is capable of sourcing 150mA, while the second regulator can source up to 300mA and includes a power-on reset


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    MIC2210 MIC2210 150mA, 300mA 150mA 100mA) PDF

    Untitled

    Abstract: No abstract text available
    Text: MIC2213 Micrel MIC2213 Sequenced Portable Power Management IC Final General Description Features The MIC2213 is a dual µCap low dropout regulator with an open-drain driver and power-on reset circuit. The first regulator is capable of sourcing 150mA, while the second regulator can source up to 300mA. A power-on reset function


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    MIC2213 MIC2213 150mA, 300mA. 150mA PDF

    RC SERVO digital CIRCUIT

    Abstract: SSI32H116 t418 32H569
    Text: SSI 32H567 siiamMkm Servo Demodulator June, 1989 DESCRIPTION sponse and sync separatorthreshold. Its high perform­ ance analog/digital circuitry is capable of supporting servo frame rates of up to 500 KHz. The SSI 32H567 Servo Demodulator is a bipolar de­


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    32H567 32H101 32H116, 32H568 32H569 28-Pin 28-PI 32H567, RC SERVO digital CIRCUIT SSI32H116 t418 PDF

    DMP14

    Abstract: NJM2777 NJM2777D NJM2777M NJM2777V SSOP14
    Text: NJM2777 電子ボリューム付ヘッドホンアンプ •外形 ■概要 概要 NJM2777は電子ボリューム機能付ヘッドホンアンプICです。ボ リュームによる利得調整範囲は+20dBから-80dBで、ミュート機能 も内蔵しており、DC電圧で制御します。TV等のヘッドフォン出力


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    NJM2777 NJM2777IC 20dB-80dB NJM2777D NJM2777M NJM2777V DIP14, DMP14, SSOP14 DMP14 NJM2777 NJM2777D NJM2777M NJM2777V SSOP14 PDF

    LP3883

    Abstract: T05D national semiconductor Linear on smps 4.5V to 100V input regulator
    Text: LP3883 3A Fast-Response Ultra Low Dropout Linear Regulators General Description Features The LP3883 is a high-current, fast-response regulator which can maintain output voltage regulation with minimum input to output voltage drop. Fabricated on a CMOS process, the


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    LP3883 LP3883 T05D national semiconductor Linear on smps 4.5V to 100V input regulator PDF

    TLV2272

    Abstract: 17PM K011 04V 709 operational amplifier MO-200 TLV2262 TLV2262A TLV2262AID TLV2262AIP TLV2262AIPWLE TLV2262ID
    Text: TLV2262, TLV2262A, TLV2262Y Advanced LinCMOS RAIL-TO-RAIL DUAL OPERATIONAL AMPLIFIERS • • • • Output Swing Includes Both Supply Rails Low N oise. . . 12 nV/VHz Typ at f = 1 kHz Low Input Bias C urrent. . . 1 pA Typ


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    TLV2262, TLV2262A, TLV2262Y SLOS129B-AUGUST TLV2262 TLV2262A -10E6 83E-6 34E-9 TLV2272 17PM K011 04V 709 operational amplifier MO-200 TLV2262AID TLV2262AIP TLV2262AIPWLE TLV2262ID PDF

    Untitled

    Abstract: No abstract text available
    Text: TLE2425 PRECISION VIRTUAL GROUND SLOS065D – MARCH 1991 – REVISED APRIL 2002 D D D D 2.5-V Virtual Ground for 5-V/GND Analog Systems High Output-Current Capability Sink or Source . . . 20 mA Typ Micropower Operation . . . 170 µA Typ Excellent Regulation Characteristics


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    TLE2425 SLOS065D TLE2425MJG TLE2425MJGB TLE2425MLP SLFJ003, PDF

    Transistor BC 1078

    Abstract: TSS400-S1 LCD tlc 771 TSS400CFN-S1 abe 630 K-Line L line BC 557 PNP TRANSISTOR circuits D4071 digital pressure sensor conditional circuit 44-PIN
    Text: TSS400-S1 uPOWER PROGRAMMABLE HIGH-PRECISION SENSOR SIGNAL PROCESSOR SLMS001 -D 407 1, JANUARY 1993 * Onboard Ratiometric Current Source Programmable From 0.15 mA x SV^d/V to 2.4 mA x (SVDD/V) Two Independent Crystal Controlled Timers (32.768 kHz) Internal MOS Oscillator Serves as System


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    TSS400-S1 SLMS001 -D4071, 12-Bit 56-Segment TSS400 TSS400-S1) D4071, D100Q75 Transistor BC 1078 TSS400-S1 LCD tlc 771 TSS400CFN-S1 abe 630 K-Line L line BC 557 PNP TRANSISTOR circuits D4071 digital pressure sensor conditional circuit 44-PIN PDF

    Dow Corning DC 896

    Abstract: iscsi sanyo ccb AA17 AB17 AC16 AD17 MPC8536E MPC8536EEC MPC8536AVT
    Text: Freescale Semiconductor Data Sheet: Product Preview Document Number: MPC8536EEC Rev. 2, 09/2009 MPC8536E PowerQUICC III Integrated Processor Hardware Specifications • High-performance, 32-bit e500 core, scaling up to 1.5 GHz, that implements the Power Architecture™


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    MPC8536EEC MPC8536E 32-bit 36-bit 64-bit cache--32-Kbyte 32-Kbyte cache--512-Kbyte 64-bit/32-bit Dow Corning DC 896 iscsi sanyo ccb AA17 AB17 AC16 AD17 MPC8536E MPC8536EEC MPC8536AVT PDF

    09813

    Abstract: No abstract text available
    Text: 14234 Kit Includes items: 09813 and 09864 For Grounding ESD Mats Key: A. 10mm .395 in. male snap to attach to mat. B. Molded in black thermoplastic elastomer. C. Wire High flex strand copper, 20 gauge, with PVC insulation. 09813 - Wire insulation Color: Black


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