TC514100APL Search Results

A76 battery

Abstract: TC514100APL ZIP20-P-400A
Contextual Info: 4,194,30^ W O R D X 1 BIT D Y N A M IC RA M This is advanced information and specifica­ tions are subject to change without notice. * D ESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as

AZL-70

Abstract: R/Detector/"detect18 ic"/"CD"/TC5141OOAPL/AJL/ad1149
Contextual Info: râ m "« S 70, TC514100APL/ÄJL/ASJL/AZL-8 0 TC5141OOAPL/AJL/ASJL/AZL-10 PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon gate process technology as

TC5141

Abstract: TC514100 a71j
Contextual Info: 4,194,304 W O R D X 1 BIT D YN A M IC RAM This is advanced information and specifica­ tions are subject to change without notice. * DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as

Contextual Info: 42 E TOSHIBA CLOGIC/MEMORY 4 ,1 9 4 ,3 0 4 W O R D X clGci 72 MÔ □02 QCHÔ =1 E l TOSE PRELIMINARY f BIT D Y N A M IC RA M ^ 4 - 2 3 - y r . DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as

AZL-70

Abstract: TC514100APL TC514100 tc3141
Contextual Info: 4,194,304 WORD x 1 BIT DYNAMIC RAM PRELIMINARY D E S C R IP T IO N T he TC514100APL/AJL/ASJL/AZL is th e new generation dynam ic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon g ate process technology as

Contextual Info: 4,1 94 ,3 0 4 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as

Contextual Info: 4 ,1 9 4 ,3 0 4 W O R D X This is advanced information and specifica- T -4 4 - 2 3 - 1r tions are subject to change without notice. 1 BIT D Y N A M IC R A M DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by

Contextual Info: 4 , 1 9 4 ,3 0 4 W O R D 1 BIT D Y N A M I C R A M X * T h is is ad van ced in fo rm atio n and sp e cifica­ tions are subject to change w ith o u t notice. DESCRIPTION T h e T C 5 1 4 1 0 0 A P L /A J L /A S J L /A Z L is th e n e w g e n e r a tio n d y n a m ic R A M o r g a n iz e d 4 ,1 9 4 ,3 0 4 w ords by

ASJ-10

Abstract: ATR10 ATR80
Contextual Info: - 230C M O S X Ä m £ tt £ CO -f- >• D y y ft tt TRAC max ns TRCY min (ns) TCAD min (ns) TAH min (ns) TP min ¡ns) n C 3 m R A M ( 4 1 9 4 TDH mir (ns) TRWC nin (ns) V D D or V C C (V) 4 X 1 ) Â m M HCÏ min (ns) 3 I DD max (mA) CL O CM 4 M I DD STANDBY