AMD 29F016B Search Results
AMD 29F016B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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AM29F016B-SContextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology |
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Am29F016B Am29F016 Icc41° AM29F016B-S | |
AM28F080
Abstract: AMD Series D flash memory card
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150ns AM28F080 AMD Series D flash memory card | |
Am28F016
Abstract: 29f016b Am28F080 PCMCIA pinout sram pcmcia flash card PCMCIA FLASH CARD 10MB PCMCIA SRAM Card AMD marking CODE flash output data flash card pcmcia AMD Series D flash memory card
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150ns 23-Dec-98 27-May-99 30-May-00 1-Aug-00 Am28F016 29f016b Am28F080 PCMCIA pinout sram pcmcia flash card PCMCIA FLASH CARD 10MB PCMCIA SRAM Card AMD marking CODE flash output data flash card pcmcia AMD Series D flash memory card | |
FLASH TRANSLATION LAYER FTL
Abstract: Am28F016 Am28F080
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150ns 23-Dec-98 28-Jul-99 FLASH TRANSLATION LAYER FTL Am28F016 Am28F080 | |
tsop 48 PIN SOCKET
Abstract: TSOP 48 socket
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150ns 29F016B EEPROM-200ns tsop 48 PIN SOCKET TSOP 48 socket | |
Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C |
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Am29F016B 20-year 29F016 44-pin | |
Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single pow er supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C |
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Am29F016B 20-year 29F016 48-pin 40-pin 44-pin | |
Contextual Info: PRELIMINARY AMD£I A m 2 9 F 0 1 6 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35|im process technology |
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Am29F016 48-pin 40-pin Am29F016B TSR040â | |
29f016b
Abstract: amd 29f016b
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Am29F016B 29F016B 29f016b amd 29f016b | |
29f016b
Abstract: AM29F016B
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29F016 16-038-TS48 TSR048 DA104 29F016B 040--40-Pin TSR040--40-Pin 16-038-TSOP-1AC TSR040 29f016b AM29F016B | |
am29f016b-75
Abstract: 29f016b
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Am29F016 CS39S 20-year Am29F016B am29f016b-75 29f016b | |
Contextual Info: PRELIMINARY AMDZ1 Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program/erase cycles per sector guaranteed ■ Package options |
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Am29F016B 48-pin 40-pin Am29F016 44-pin twHwi-12- | |
AM29F016BContextual Info: PR ELIM IN ARY AMDZ1 Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Typical 1,000,000 w rite/erase cycles (minimum 100,000 cycles guaranteed) |
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Am29F016B 48-pin 40-pin 29F016 44-pin 16-038-S044-2 AM29F016B 29F016B |