AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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AMD ORDERING AM29F010B PACKAGE
Abstract: AMD AM29F010B PACKAGE known good die AMD AM29F010B-120 AM29F010B-90 AMD ORDERING AM29F010B AMD Package type am29f010b AM29F010 known good AM29F010 die
Text: Am29F010B Known Good Die Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29F010B
AMD ORDERING AM29F010B PACKAGE
AMD AM29F010B PACKAGE
known good die AMD
AM29F010B-120
AM29F010B-90
AMD ORDERING AM29F010B
AMD Package type am29f010b
AM29F010 known good
AM29F010 die
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Untitled
Abstract: No abstract text available
Text: Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements
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Am29F017B
Am29F016C
20-year
40-pin
48-pin
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AM29F017D-120
Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Text: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F017D
AM29F017D-120
AM29F017D-150
AM29F017D-70
AM29F017D-90
SA10
SA11
SA12
SA13
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CS39S
Abstract: No abstract text available
Text: Am29LV200B Known Good Wafer Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV200B
CS39S
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AM29F080B-120
Abstract: AM29F080B-150 AM29F080B-75 AM29F080B-90 SA10 df83
Text: Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device
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Am29F080B
Am29F080
AM29F080B-120
AM29F080B-150
AM29F080B-75
AM29F080B-90
SA10
df83
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AM29LV008BB-120
Abstract: AM29LV008BB-70R AM29LV008BB-90 AM29LV008BT-120 AM29LV008BT-70R AM29LV008BT-90 SA10 SA11
Text: Am29LV008B Data Sheet The Am29LV008B is not offered for new designs. Please contact a Spansion representative for alternates. The following document contains information on Spansion memory products. Although the document is marked with the name of the company that originally developed the specification, Spansion will
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Am29LV008B
21524D6
AM29LV008BB-120
AM29LV008BB-70R
AM29LV008BB-90
AM29LV008BT-120
AM29LV008BT-70R
AM29LV008BT-90
SA10
SA11
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AM29F017D-120
Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Text: Am29F017D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with Am29F016C and Am29F017B ■ 5.0 V ± 10%, single power supply operation
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Am29F017D
Am29F016C
Am29F017B
AM29F017D-120
AM29F017D-150
AM29F017D-70
AM29F017D-90
SA10
SA11
SA12
SA13
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AM29F016D-120
Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
Text: Am29F016D Data Sheet The Am29F016D is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any
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Am29F016D
21444E5
AM29F016D-120
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
SA14
SA15
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AM29F080B-90
Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA10-SA1 am29f080b-90ei
Text: Am29F080B Data Sheet Am29F080B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
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Am29F080B
21503G8
AM29F080B-90
SA10
SA11
SA12
SA13
SA14
SA15
SA10-SA1
am29f080b-90ei
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Untitled
Abstract: No abstract text available
Text: Am29LV200B Known Good Wafer Data Sheet Retired Product Am29LV200B Known Good Wafer Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.
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Am29LV200B
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AM29LV200BB-70
Abstract: AM29LV200BT-70
Text: SUPPLEMENT Am29LV200B Known Good Die 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revision 1 DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV200B
8-Bit/128
16-Bit)
AM29LV200BB-70
AM29LV200BT-70
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am29f040b
Abstract: No abstract text available
Text: Am29F040B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F040B
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Untitled
Abstract: No abstract text available
Text: Am29F017D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only. The following document contains information on Spansion memory products.
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Am29F017D
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AM29F200BB-90
Abstract: AM29F200BT-90
Text: SUPPLEMENT Am29F200B Known Good Die 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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Am29F200B
8-Bit/128
16-Bit)
Am29F200A
ACN2016)
AM29F200BB-90
AM29F200BT-90
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L800BB90V
Abstract: No abstract text available
Text: Am29LV800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications ■ Manufactured on 0.32 µm process technology
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Am29LV800B
8-Bit/512
16-Bit)
Am29LV800
L800BB90V
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AM29LV008BB-120
Abstract: AM29LV008BB-70R AM29LV008BB-90 AM29LV008BT-120 AM29LV008BT-70R AM29LV008BT-90 SA10 SA11
Text: Am29LV008B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and
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Am29LV008B
Am29LV008
AM29LV008BB-120
AM29LV008BB-70R
AM29LV008BB-90
AM29LV008BT-120
AM29LV008BT-70R
AM29LV008BT-90
SA10
SA11
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known good die AMD
Abstract: No abstract text available
Text: SU PPLEM EN T Am29F200B Known Good Die AMDH 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% fo r read and w rite o perations — Minimizes system level power requirements
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Am29F200B
8-Bit/128
16-Bit)
Am29F200A
CS39S
known good die AMD
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am29f040b
Abstract: No abstract text available
Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F040B
Am29F040
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24SA27
Abstract: AM29F017B
Text: AM D Ì1 A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ Minim um 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125 C
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29F016C
29F017B
24SA27
AM29F017B
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology
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Am29F080B
Am29F080
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C
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Am29F016B
20-year
29F016
44-pin
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F080B
20-year
Am29F080
40-pin
44-pin
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications ■ — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation
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Am29F017B
Am29F016C
20-year
48-pin
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