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    AM29F016B Price and Stock

    AMD AM29F016B-90SC

    Flash Memory - Parallel - 5V - 16M-Bit - 2M x 8 - 90ns - 44-Pin SOP Package.
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    Onlinecomponents.com AM29F016B-90SC 4
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    AMD AM29F016B-120EC

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    AM29F016B Datasheets (146)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Am29F016B Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory Original PDF
    Am29F016B Advanced Micro Devices Am29F016B KGD (Known Good Die) Supplement Original PDF
    Am29F016B Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory Original PDF
    Am29F016B Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory Die Revision 1 Original PDF
    AM29F016B-1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 Original PDF
    Am29F016B-120DGC1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 Original PDF
    AM29F016B-120DGC1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 2 Original PDF
    AM29F016B-120DGI1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 2 Original PDF
    Am29F016B-120DGI1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 Original PDF
    AM29F016B-120DPC1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 2 Original PDF
    Am29F016B-120DPC1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 Original PDF
    Am29F016B-120DPI1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 Original PDF
    AM29F016B-120DPI1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 2 Original PDF
    Am29F016B-120DTC1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 Original PDF
    AM29F016B-120DTC1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 2 Original PDF
    Am29F016B-120DTI1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 Original PDF
    AM29F016B-120DTI1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 2 Original PDF
    Am29F016B-120DWC1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 Original PDF
    AM29F016B-120DWC1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 2 Original PDF
    AM29F016B-120DWI1 Advanced Micro Devices 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 2 Original PDF
    ...

    AM29F016B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    known good die AMD

    Abstract: ACN2016 AMD 21551
    Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 2 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology


    Original     		PDF Am29F016B ACN2016) known good die AMD ACN2016 AMD 21551

    Untitled

    Abstract: No abstract text available
    Text: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device


    Original     		PDF Am29F016B Am29F016 20-year 48-pin 40-pin 44-pin

    SA10

    Abstract: SA11 AM29F016B-90
    Text: PRELIMINARY Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology


    Original     		PDF Am29F016B Am29F016 sector20 16-038-TSOP-1 TSR040--40-Pin TSR040 SA10 SA11 AM29F016B-90

    25820

    Abstract: AM29F016B
    Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology


    Original     		PDF Am29F016B 25820

    SA10

    Abstract: SA11
    Text: PRELIMINARY Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology


    Original     		PDF Am29F016B Am29F016 SA10 SA11

    Untitled

    Abstract: No abstract text available
    Text: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device


    Original     		PDF Am29F016B Am29F016

    25820

    Abstract: AM29F016B Die Attach and Bonding Guidelines AM29F016B KNOWN GOOD known good die AMD AMD 21551
    Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology


    Original     		PDF Am29F016B 25820 Die Attach and Bonding Guidelines AM29F016B KNOWN GOOD known good die AMD AMD 21551

    amd AM29F016

    Abstract: am29f016b-75
    Text: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device


    Original     		PDF Am29F016B Am29F016 amd AM29F016 am29f016b-75

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F016U08SJ08-XX 8MB FLASH SIMM, based on AMD Am29F016B Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F016U08SJ08-XX is a 5.0V flash memory SIMM, composed of four CMOS 16Mbit


    Original     		PDF AVEF29F016U08SJ08-XX Am29F016B AVEF29F016U08SJ08-XX 16Mbit 80-pin, 120ns

    PAL PATTERN GENERATOR

    Abstract: SO44-2 SA10 SA11
    Text: PRELIMINARY Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology


    Original     		PDF Am29F016B Am29F016 sectF016B 16--Temporary PAL PATTERN GENERATOR SO44-2 SA10 SA11

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


    Original     		PDF Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13

    AM29F017D-120

    Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
    Text: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29F017D AM29F017D-120 AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13

    Am29F016B

    Abstract: HMF2M32M4GL Flash-ROM Module
    Text: HANBit HMF2M32M4GL FLASH-ROM MODULE 8MByte 2M x 32-Bit , 72pin-SIMM, 5V Part No. HMF2M32M4GL GENERAL DESCRIPTION The HMF2M32M4GL is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 2M x 8bit FROM mounted on a 72 -pin, single-sided, FR4-printed circuit


    Original     		PDF HMF2M32M4GL 32-Bit) 72pin-SIMM, HMF2M32M4GL x32bit HMF2M32M4GL-75 32bit 72Pin-SIMM Am29F016B Flash-ROM Module

    AM29F017D-120

    Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
    Text: Am29F017D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with Am29F016C and Am29F017B ■ 5.0 V ± 10%, single power supply operation


    Original     		PDF Am29F017D Am29F016C Am29F017B AM29F017D-120 AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C


    OCR Scan     		PDF Am29F016B 20-year 29F016 44-pin

    AM29F016B

    Abstract: No abstract text available
    Text: PR ELIM IN ARY AMDZ1 Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Typical 1,000,000 w rite/erase cycles (minimum 100,000 cycles guaranteed)


    OCR Scan     		PDF Am29F016B 48-pin 40-pin 29F016 44-pin 16-038-S044-2 AM29F016B 29F016B

    29f016b

    Abstract: amd 29f016b
    Text: AMDa Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ M anufactured on 0.32 \im process technology


    OCR Scan     		PDF Am29F016B 29F016B 29f016b amd 29f016b

    AM29F016B-S

    Abstract: No abstract text available
    Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology


    OCR Scan     		PDF Am29F016B Am29F016 Icc41° AM29F016B-S

    Untitled

    Abstract: No abstract text available
    Text: SUPPLEM ENT Am29F016B Known Good Die AMDZ1 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology


    OCR Scan     		PDF Am29F016B

    100Nm

    Abstract: AMD 21551
    Text: S U P P LLT .1EH] AMD£I Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory- -Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements


    OCR Scan     		PDF Am29F016B 100Nm AMD 21551

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single pow er supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C


    OCR Scan     		PDF Am29F016B 20-year 29F016 48-pin 40-pin 44-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMDZ1 Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program/erase cycles per sector guaranteed ■ Package options


    OCR Scan     		PDF Am29F016B 48-pin 40-pin Am29F016 44-pin twHwi-12-

    Untitled

    Abstract: No abstract text available
    Text: AMD* Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision t DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Minimum 100,000 write/erase cycles guaranteed


    OCR Scan     		PDF Am29F016B

    AM29F032B 04h

    Abstract: 19945 AM29F010
    Text: Am29Fxxx, 5.0 Volt-only Flash AMD* Device Bus Operations, Command Definitions, and Write Operations Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29Fxxx, 5.0 volt-only family of Flash


    OCR Scan     		PDF Am29Fxxx Am29F010A Am29F100 AM29F032B 04h 19945 AM29F010