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    19945 Search Results

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    19945 Price and Stock

    TE Connectivity 119945-E

    IBRIDGE 2MM F CRIMP TERMINAL SN
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    DigiKey 119945-E Cut Tape 30,123 1
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    119945-E Reel 20,000 10,000
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    Master Electronics 119945-E 8,684
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    New Advantage Corporation 119945-E 20,000 1
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    Sager 119945-E 10,000
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    TE Connectivity 5-2301994-5

    CONN JACK 1PORT PCB
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    DigiKey 5-2301994-5 Tray 2,074 1
    • 1 $7.89
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    Newark 5-2301994-5 Bulk 2,171 20
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    Avnet Abacus 5-2301994-5 15 Weeks 1,200
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    TE Connectivity 2301994-5

    CONN JACK 1PORT PCB
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    DigiKey 2301994-5 Cut Tape 246 1
    • 1 $11.24
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    2301994-5 Reel 160 80
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    Avnet Americas 2301994-5 Reel 18 Weeks, 1 Days 320
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    Newark 2301994-5 Bulk 4,130 80
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    RS 2301994-5 Bulk 1
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    TTI 2301994-5 Reel 320
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    Interstate Connecting Components 2301994-5
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    Avnet Abacus 2301994-5 15 Weeks 320
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    2301994-5 17 Weeks 80
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    Master Electronics 2301994-5
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    Neutron USA 2301994-5 50
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    Sager 2301994-5 80
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    TE Connectivity DCPT-19-9-45-SP

    HEATSHRINK 0.748" GRN/YLW METER
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    DigiKey DCPT-19-9-45-SP 125 1
    • 1 $17.7
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    • 100 $10.5838
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    Phoenix Contact 1019945

    CIRCUIT BRAKER 30A
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    DigiKey 1019945 Box 12 1
    • 1 $31.43
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    TTI 1019945 Each 1
    • 1 $29.33
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    • 100 $26.67
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    Master Electronics 1019945
    • 1 $35.48
    • 10 $32.83
    • 100 $28.89
    • 1000 $28.21
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    Neutron USA 1019945 12
    • 1 $92.95
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    Sager 1019945 1
    • 1 $36.67
    • 10 $35.2
    • 100 $31.43
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    19945 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1994513 Phoenix Contact Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLOCK 2POS 45DEG 3.5MM PCB Original PDF

    19945 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AM29F032B 04h

    Abstract: 19945 AM29F010
    Text: Am29Fxxx, 5.0 Volt-only Flash AMD* Device Bus Operations, Command Definitions, and Write Operations Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29Fxxx, 5.0 volt-only family of Flash


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    Am29Fxxx Am29F010A Am29F100 AM29F032B 04h 19945 AM29F010 PDF

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology


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    Am29F080B Am29F080 PDF

    VESD05A1B-02V-GS08

    Abstract: No abstract text available
    Text: VESD05A1B-02V Vishay Semiconductors ESD-Protection Diode in SOD-523 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 20 kV contact discharge > 30 kV air discharge • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz • Leakage current < 0.1 µA (VR = 5 V)


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    VESD05A1B-02V OD-523 2002/95/EC 2002/96/EC VESD05A1B-02V-GS08 18-Jul-08 VESD05A1B-02V-GS08 PDF

    epcos 565-2

    Abstract: B57540G0103F000 B57540G0104F000 565-2 EPCOS EPCOS B25 160 131850 263640 EPCOS b57540 B57540G0502F000 10311
    Text: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57540 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


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    B57540 epcos 565-2 B57540G0103F000 B57540G0104F000 565-2 EPCOS EPCOS B25 160 131850 263640 EPCOS b57540 B57540G0502F000 10311 PDF

    B57550G0103F000

    Abstract: 13844 B57550G0104H000 B57550G0202G000 B57550G0202F000 263640 33260 B57550 B57550G0103J000 533390
    Text: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57550 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


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    B57550 B57550G0103F000 13844 B57550G0104H000 B57550G0202G000 B57550G0202F000 263640 33260 B57550 B57550G0103J000 533390 PDF

    2SA1241

    Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
    Text: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )


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    2SA1241) 2SA1241 2SC3076 2SA1241 V10Urns a1241 A 1241 transistor 2sa1241 1241 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ Package options


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    Am29F080B 40-pin 29F080 44-pin 29F080B PDF

    AM29F080B-120

    Abstract: AM29F080B-150 AM29F080B-75 AM29F080B-90 SA10 df83
    Text: Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device


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    Am29F080B Am29F080 AM29F080B-120 AM29F080B-150 AM29F080B-75 AM29F080B-90 SA10 df83 PDF

    Untitled

    Abstract: No abstract text available
    Text: VESD05A1B-02Z Vishay Semiconductors ESD Protection Diode in SOD923 Features • Small SOD923 package • Low leakage current e3 • ESD immunity acc. to IEC 61000-4-2 ± 20 kV • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


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    VESD05A1B-02Z OD923 OD923 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    AM29F080B-90

    Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA10-SA1 am29f080b-90ei
    Text: Am29F080B Data Sheet Am29F080B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been


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    Am29F080B 21503G8 AM29F080B-90 SA10 SA11 SA12 SA13 SA14 SA15 SA10-SA1 am29f080b-90ei PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — M inimizes system level power requirem ents ■ M anufactured on 0.35|xm process technology


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    Am29F080B 40-pin 29F080 44-pin 29F080B 16-038-TSOP-1 TSR040â PDF

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


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    Am29F080B 20-year Am29F080 40-pin 44-pin PDF

    D4457N

    Abstract: 22202 d4457n m3.2 9373 9398-4 D2228N D5807N D798N D8019N 2u 45 diode
    Text: M3.2U - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM ~ 60 Veff 35 V 200 V ~ ~ ~ ~ ~ + Kühlblöcke für Wasserkühlung mit offener Isolation Temp. tA [°C] M3_2v11 Satzstrom Id [A] Verlustl. Pd Wasserm. vL


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    D798N D2228N D4457N D5807N D8019N D4457N 22202 d4457n m3.2 9373 9398-4 D2228N D5807N D798N D8019N 2u 45 diode PDF

    SA13

    Abstract: SA14 SA10 SA11 SA12
    Text: PRELIMINARY Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology


    Original
    Am29F080B Am29F080 SA13 SA14 SA10 SA11 SA12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am29F080B Data Sheet Am29F080B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been


    Original
    Am29F080B 21503G7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am29F080B Data Sheet Am29F080B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been


    Original
    Am29F080B 21503G8 PDF

    Am29F080B

    Abstract: No abstract text available
    Text: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


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    Am29F080B 20-year Am29F080 40-pin 44-pin PDF

    Am29F080B

    Abstract: No abstract text available
    Text: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Typical 1,000,000 w rite/erase cycles (minimum 100,000 cycles guaranteed)


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    Am29F080B 40-pin 29F080 44-pin 29F080B PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ — Embedded Erase algorithm automatically


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    Am29F080B Am29F080 40-Pin TSR040â PDF

    AM29F080B-120

    Abstract: AM29F080B-150 AM29F080B-90 SA10 SA11 SA12 SA13
    Text: Am29F080B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am29F080B AM29F080B-120 AM29F080B-150 AM29F080B-90 SA10 SA11 SA12 SA13 PDF

    Untitled

    Abstract: No abstract text available
    Text: •I 1017247 0020137 H7fl TO SH IB A SEMICONDUCTOR TOSHIBA LED LAMP T L Y H 1 9 0 P InGaAlP YELLOW LIGHT EMISSION TECHNICAL DATA O P A N E L CIRCUIT INDICATOR UNIT : mm 10mm DIAMETER • InGaAlP Yellow LED • All Plastic Mold Type. • Colorless Clear Lens


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    TLYH190P PDF

    TSZ3G44S

    Abstract: toshiba TLC TSZ3J44S
    Text: TOSHIBA SOLID STATE AC RELAY SEMICONDUCTOR TOSHIBA TECHNICAL T S Z 3 G 4 4 S #T S Z 3 J 4 4 S DATA TSZ3G44S Unit in mm OPTICALLY ISOLATED, NORMALLY OPEN SSR. COMPUTER PERIPHERALS MACHINE TOOL CONTROLS PROCESS CONTROL SYSTEMS TRAFFIC CONTROL SYSTEMS • •


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    TSZ3G44S TSZ3G44S) TSZ3J44S 24Vrms, 200Vrms, 100Vrms, toshiba TLC TSZ3J44S PDF

    263640

    Abstract: 74264 B57560G0103F000 164 20 8525 533390 70216 820810 EPCOS 1786 B57560G0202 B57560G0104F000
    Text: NTC thermistors for temperature measurement Glass-encapsulated sensors, standard type Series/Type: Date: B57560 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original
    B57560 263640 74264 B57560G0103F000 164 20 8525 533390 70216 820810 EPCOS 1786 B57560G0202 B57560G0104F000 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program/erase cycles per sector guaranteed ■ Package options


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    Am29F080B 40-pin Am29F080 44-pin PDF