AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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PDF
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Untitled
Abstract: No abstract text available
Text: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for
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Am29LV081
20-year
Am29LV081B-100
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PDF
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Am29LV080
Abstract: No abstract text available
Text: ADVANCE INFORMATION AM DO Am29LV080 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS Extended operating voltage range Ready/Busy output — 2.7 to 3.6 V for read and write operations — Hardware method for detection of program or
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Am29LV080
40-pin
44-pin
02575Sfl
G03M351
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PDF
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20510D
Abstract: No abstract text available
Text: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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OCR Scan
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Am29LV004
20510D
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
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Am29LV033C
63-ball
40-pin
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PDF
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29F032B
Abstract: m29f032b
Text: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology
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OCR Scan
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Am29F032B
20-year
29F032B
29F032B
m29f032b
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PDF
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Am29DL400BT
Abstract: No abstract text available
Text: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,
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Am29DL400B
16-Bit)
44-Pin
16-038-S044-2
Am29DL400BT
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Optim ized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and w rite operations for
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Am29LV081
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PDF
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T1A16
Abstract: 29LV116
Text: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and
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Am29LV116B
ar116B
T1A16
29LV116
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PDF
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AM29F032
Abstract: am29f032b-120 AM29F032B-90
Text: AM D il Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F032B
20-year
40-pin
44-pin
AM29F032
am29f032b-120
AM29F032B-90
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PDF
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24SA27
Abstract: AM29F017B
Text: AM D Ì1 A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ Minim um 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125 C
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29F016C
29F017B
24SA27
AM29F017B
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PDF
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology
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Am29F080B
Am29F080
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PDF
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29LV008
Abstract: No abstract text available
Text: — P R E L IM IN A R Y — AMD Cl Am29LV008T/Am29LV008B 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • ■ ■ Single power supply operation ■ — Extended voltage range: 2.7 to 3.6 volt read and write operations for battery-powered
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Am29LV008T/Am29LV008B
29LV008
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PDF
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29LV033C
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
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OCR Scan
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Am29LV033C
63-ball
40-pin
29LV033C
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PDF
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032XM
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce
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OCR Scan
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Am29LV033C
63-ball
40-pin
032XM
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PDF
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Untitled
Abstract: No abstract text available
Text: Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements
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Am29F017B
Am29F016C
20-year
40-pin
48-pin
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PDF
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29DL400BT-70
Abstract: No abstract text available
Text: PRELIMINARY AMDil Am29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank,
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Am29DL400B
8-Bit/256
16-Bit)
29DL400BT-70
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ Package options
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OCR Scan
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Am29F080B
40-pin
29F080
44-pin
29F080B
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PDF
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AM29F017D-120
Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Text: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F017D
AM29F017D-120
AM29F017D-150
AM29F017D-70
AM29F017D-90
SA10
SA11
SA12
SA13
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PDF
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AM29LV033C-120
Abstract: AM29LV033C-70 AM29LV033C-90 SA10 SA11 L033C AM29LV033C
Text: Am29LV033C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV033C
AM29LV033C-120
AM29LV033C-70
AM29LV033C-90
SA10
SA11
L033C
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PDF
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AM29F080B-120
Abstract: AM29F080B-150 AM29F080B-75 AM29F080B-90 SA10 df83
Text: Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device
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Am29F080B
Am29F080
AM29F080B-120
AM29F080B-150
AM29F080B-75
AM29F080B-90
SA10
df83
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PDF
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AM29F017D-120
Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Text: Am29F017D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with Am29F016C and Am29F017B ■ 5.0 V ± 10%, single power supply operation
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Am29F017D
Am29F016C
Am29F017B
AM29F017D-120
AM29F017D-150
AM29F017D-70
AM29F017D-90
SA10
SA11
SA12
SA13
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PDF
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SA10
Abstract: SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18
Text: Am29LV116D 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications ■ Manufactured on 0.23 µm process technology
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Original
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Am29LV116D
Am29LV116B
20-year
40-pin
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
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PDF
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AM29F016D-120
Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
Text: Am29F016D Data Sheet The Am29F016D is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any
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Am29F016D
21444E5
AM29F016D-120
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
SA14
SA15
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PDF
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