Untitled
Abstract: No abstract text available
Text: SA5.0 THRU SEM ICONDUCTOR TECHNICAL DATA FORWARDBTIERNATONAI ELECIKQNK&LID. SA170CA TECHNICAL SPECIFICATIONS O F TRANSIENT VOLTAGE S U P P R E S S O R VOLTAGE RANGE - 5.0 to 170 Volts PEAK PULSE POWER - 500 Watts FEATURES * Glass passivated junction T 500 Watts Peak Pulse Power capability on
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SA170CA
DO-15
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ajlj
Abstract: L826-1E4M-P5
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO DEL FUSE INC. AND SHALL NOT DE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF DEL FUSE INC. LEDI PDLARITY PIN 13 PIN 14 CDLDR + GREEN - RoHS 2002/95/EC LED2 POLARITY PIN 15 PIN 16 CDLDR
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2002/95/EC
100kHz
100MHz
2MHz-30MHz
60MHz-80MHz
350juH
240PCS
L8261E4MP5-F
ajlj
L826-1E4M-P5
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Untitled
Abstract: No abstract text available
Text: THIRD AMOLE M E T R I C SCALE DIMENSIONS IN mm # £ 3 NO TES. A TO DETERMÍNEDIMENSIONS TAKE 2 x N = NR. OF POS. FOR EXAMPLE: 2x10 POS. N x 2,54 =25.4 mm. FOR ORDERNR. USE OASIC NR. + NR. OF POS. FOR E X A M P L E . ^ 54 2 , Ieüh r tn Ifiar m / Bi mi HtH
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HV-100
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2n11
Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
Text: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10
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2N910
2N911
2N912
2N956-
2N1052
2N1053
2N1054
2N1055
CBR30
0000S23
2n11
2N1116
2N1117
2N1420
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K174YH7
Abstract: k2651 K159HT1 TBA120 k157 tba810 K159 K174YP1 K798 K140y
Text: HHTETPAJlbHblE MMKPOCXEMbI T om III 5 CCCP MOCKBA K a T a j i o r „ M H T e r p a jib H b ie M H K p o c x e M b i“ conep>KHT TexHM HeCKHe X a p ü K T e p H C T H K M H H T e r p a jlb H b lX M M K p o e x e M , KOT o p b ie 3 K c n o p T n p y e T C o b c t c k h h
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C0103.
K119YC
K174YH7
k2651
K159HT1
TBA120
k157
tba810
K159
K174YP1
K798
K140y
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BTI ML-1 94V-0
Abstract: 94V-0 BTI ML-1 TRANSISTOR SMD MARKING CODE ALG horizontal transistor tt 2206 smd transistor marking 44s MEC 1300 nu ALG B7 smd transistor transistor horizontal tt 2206 jj-02 94v-0 gm 5766 lf
Text: A F C T A B L E \_ J/i \L -\S lH Y iiK C O H N E C T iO N o f c o n t e n t s PRODUCT LINE SERIES NUMBERS SP E C fW JSn S TABLE OF CONTENTS .I~ IV OPEN FRAME SOCKETS
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KS0086
Abstract: No abstract text available
Text: PRELIMINARY 80CH COM/SEG DRIVER FOR DOT MATRIX LCD KS0086 INTRODUCTION 100QFP The KS0086 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. In case of segment driver, it can be interfaced as 1-bit serial or 4-bit parallel by controller. In case of common
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KS0086
100QFP
KS0086
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS2180A T1 Transceiver FEATURES PIN ASSIGNMENT • Single chip DS1 rate transceiver • Supports common framing standards - 12 frames/superframe “193S” - 24 frames/superframe “193E” • Three zero suppression modes - B7 stuffing
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DS2180A
2bl4130
0D12034
DS2180AQ
2bl413D
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lts 543 pin configuration
Abstract: lts 543 pin diagram lts 543 series pin diagram AUK 534 lts 542 pin diagram LTS 543 dmo 565 r lts 543 data sheet AUK 548 lts 542
Text: Philips Semiconductors Preliminary specification Drive processor for DCC systems SAA3323 FEATURES fD IG IT A L • Operating supply voltage: 2.7 to 3.6 V croc: • Low power dissipation: 84 mW typ • Single chip digital equalizer, tape formatting and error
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SAA3323
10-tap
CLK24
CLK24
7110fl2b
lts 543 pin configuration
lts 543 pin diagram
lts 543 series pin diagram
AUK 534
lts 542 pin diagram
LTS 543
dmo 565 r
lts 543 data sheet
AUK 548
lts 542
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DRAM "deep trench" capacitor
Abstract: No abstract text available
Text: ».ISrtM IJ*. l.'VlALllf- r tr r U L n ttJ IU H S M E M O R IE S Johann Hanw * WcJf Henkel * KjrMwtrct Hwnlngr The 64M-bit DRAM: A Ä m f i A U . , , « rl r iI tM^ lr rI il ui i tr wy l u : « rW' ll iI iI £nJ hF r « - - I - l— - m i im m I \ J I L I IV /
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64M-bÃ
64M-bit
-ii-1111
DRAM "deep trench" capacitor
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2N4248
Abstract: 2N4249 2N4250 2N4250A 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910
Text: bl SEMICONDUCTOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 V CB V CE V EB hFE at le VCE V V V min ma mA V V 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75 0.6 0.4 0.15 — — 120 c
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2N4389
O-106
2N5055
2N5140
T0-106
2N5141
2N5228
2N5910
2N4248
2N4249
2N4250
2N4250A
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2SJ167
Abstract: 2SK1061
Text: TOSHIBA 2SK1061 T O SH IB A FIELD EFFECT T R A N SIST O R SILICO N N C H A N N E L M O S TYPE 2 S K 1 061 Unit in mm HIGH SPEED SW IT C H IN G A PP LIC A T IO N S A N A L O G SW ITCH A PP LIC A T IO N S 4.2MAX. INTERFACE A PP LIC A T IO N S Excellent Switching Times
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2SK1061
2SJ167
55MAX.
2SJ167
2SK1061
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Untitled
Abstract: No abstract text available
Text: REVISIONS SYM ZONE ECN, ERN NO. B DATE 0 2 /0 3 /0 5 PROPOSAL APPRD. C.B. THIS IS A CAD DRAWING. DO NOT MANUALLY REVISE. • CONTACT FINISH/GOLD THICKNESS NO DIGIT=STANDARD 15 MICROINCHES [0 .3 8 MICRONS] GOLD G = 5 0 MICROINCHES [1 .2 7 MICRONS] GOLD ORDERING CODE:
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---------25SM
B25SWâ
FCC17
E09SMâ
E09SWâ
FCC17
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NJL5171K
Abstract: C07S
Text: C3H3 NJL5171K/71K F W A i t i t i <nm9\-LE0£ N JL5 17 1 K / 7 1 K F l i , ? S lS JfO T S i 7 * ì : h ' > > í O L " f > 7 -í > < 7 S 'J 'g í • Í S > t S Í 7 * t- V 7 L ' ^ í ’ T -T o & • ^ S / J ' fSl;! * ¡SíiW ’í 1- 1 . 6 5 m m X 2 . 6 m m X 4 . 4 m m )
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NJL5171K/71KF
NJL5171K/71KF
NJL5171K
C07S
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Untitled
Abstract: No abstract text available
Text: S C IE N T IF IC / M IN I-C IR C U IT S 4 TE D • flQ b flflll DOD1 4 7 R 2 1 2 * S C C broadband, high dynamic range Frequ ncy Mix©rs # TUF-860MH LEV EL 13 +13 dBm LO, up to +9 dBm RF T -7 4 -0 9 -0 1 computer-automated perform ance data typical production unit
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TUF-860MH
13dBm
16dBm
TUF-860M
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Untitled
Abstract: No abstract text available
Text: KM4 13 2 G 2 7 1 ELECTRONICS Graphic Memo ry 128K x32B itx2B ank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG’S high performance
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KM4132G271
4132G271)
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X2816
Abstract: 6502 CPU architecture block diagram TF 6221 HEN LED display rm65 Seiki STP H 200 R6530 hall marking code A04 vacuum tube applications data book National Semiconductor Linear Data Book Futaba 9 bt 26
Text: $5.00 1984 DATA B O O K Second Edition Rockwell International Semiconductor Products Division Rockwell International Corporation 1984 All Rights Reserved Printed in U.S.A. Order No. 1 March, 1984 Rockwell Semiconductor Products Division is headquartered in Newport Beach,
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