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    ACRIAN INC Search Results

    ACRIAN INC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    GCM033C70J104KE02J Murata Manufacturing Co Ltd 0201 (0603M) X7S (EIA) 6.3Vdc 0.1μF±10% Visit Murata Manufacturing Co Ltd
    GRT155R61A106ME13J Murata Manufacturing Co Ltd 0402 (1005M) X5R (EIA) 10Vdc 10μF±20% Visit Murata Manufacturing Co Ltd
    GRT21BD72A225KE13K Murata Manufacturing Co Ltd 0805 (2012M) X7T (EIA) 100Vdc 2.2μF±10% Visit Murata Manufacturing Co Ltd
    KC355QD7LF224KH01K Murata Manufacturing Co Ltd X7T (EIA) 1000Vdc 0.22μF±10% Visit Murata Manufacturing Co Ltd

    ACRIAN INC Datasheets Context Search

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    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


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    PDF namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet

    Acrian

    Abstract: UTV120 linear amplifier 470-860 acrian inc UTV040 470-860 mhz Power amplifier w UTV-040 UTV-040-2 acrian utv040
    Text: 0182998 ACRIAN 97D IN C T? ACRIAN INC GENERAL 0 1543 dF ^ T ' - S 3 ' - e J | oiaa^fl 00015113 UTV-040 D E S C R IP T IO N 4 WATTS - 25 VOLTS 470-860 MHz The UTV-040 is specifically designed for Class A UHF Band IV and V TV applications providing 4 Watts power output at


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    PDF GOOIS43 UTV-040 04Q-3 Acrian UTV120 linear amplifier 470-860 acrian inc UTV040 470-860 mhz Power amplifier w UTV-040-2 acrian utv040

    N15W

    Abstract: acrian 0510-50 ACRIAN 0510-50 acrian inc
    Text: 0182998 ACRIAN INC T7 ACRIAN INC DE I OlöSTTfi — GENERAL T - 3 'I - DGD1E33 S m m 0510-10 DESCRIPTION 10 WATTS - 28 VOLTS 500-1ÖÖÖ? MHz The 0510-10 is a common emitter silicon power transistor providing 10 watts of CW power across a 500-1000 frequency band. Gold metallization


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    PDF DGD1E33 Tc-25 T-33-0? N15W acrian 0510-50 ACRIAN 0510-50 acrian inc

    acrian inc

    Abstract: Acrian acrian ic
    Text: 0182, 99.8 ACRIAN: INC, T7 DEI OlflETTfl □□D13t,2 S ACRIAN INC GENERAL 9B S E 2 D E S C R IP T IO N 2 WATTS * 22 VOLTS 960 MH2 The 9BSE2 is a common emitter, silicon bipolar transistor capable of providing 2 watts of output power at 960 MHz. The device is designed for cellular base station applications


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    PDF D13ti5 150Volts Ic-100mA acrian inc Acrian acrian ic

    ACRIAN

    Abstract: acrian inc
    Text: 0182998 ACRIAN INC T7 ACRIAN INC rJm UStk Krai JS l M l ¡2 S I H m P ! S r . n i L h Wj¡¡¡ h >« Ü m&Z I 12 WATT - 28 VOLT 100-500 MHz The 0105-12 is a 12 watt balanced transistor designed for broadband use in the 100-500 M Hz frequency band. It may be operated in Class A, AB or C. Gold


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    PDF 33-OJ GDG1E17 ACRIAN acrian inc

    8Z-2

    Abstract: ACRIAN acrian inc fn 155 Scans-00115726
    Text: 0182998 ACRIAN 97D 0 13 26 INC ACRIAN INC ^7 K _H 9gH _ M M aaM n h <h h h | a g r j u a aM ^ «aa H tM M M ItM ^ M t m m u M > m m a DE I OlfiSTTfl DOOlHSb 1 I M M1- W „ „ „ ,. . IBSHüflKSIBMHmeaHR! C5-8Z GENERAL DESCRIPTION 5 WATTS - 8 VOLTS 400*512 MHz


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    ACRIAN

    Abstract: C1-12 C1-12-2 C1-12-3 acrian 1 C1123 acrian inc C112-2 acrian rf power
    Text: 0182998 ACRIAN 97D INC [ACRIAN INC T7 01318 DE D 7 "-7 3 -0 5 ' D i ñ a b a □DD131Û 5 |~¡ • IS iS IK E i w iJ S R £ S * ■ » mm M l ¡¿S I H P S P . H a l M U W m m m M m ms& I GENERAL C1-12 D E S C R IP TIO N 1 WATT - 12.5 VOLT 450-512 MHz The C1-12 is specifically designed for UHF


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    PDF C1-12 DQD132G" C1-12-3 470pf 005jif L4-1T3/16" ACRIAN C1-12-2 C1-12-3 acrian 1 C1123 acrian inc C112-2 acrian rf power

    VM0870

    Abstract: BM45-12 B3-12 B15-12 DDD1317 VMOB70-2 VCC125
    Text: 0182998 ACRIAN INC DlñSTTñ 000131S Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating JunctionTemperature D T'-SJ-/*- us VMOB70 GENERAL DESCRIPTION


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    0105-50

    Abstract: Scans-00115685
    Text: 0182998 ACRIAN GENERAL 97D 0 1156 INC 0104-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-400 MHz The 0104-100 balanced transistor is specifically designed for wideband operation from 100-400 MHz. It may be operated Class A, AB or C. Gold metalization and silicon


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    PDF -T-33-15 -65to Vcc-28V T-33-15 0105-50 Scans-00115685

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50
    Text: DE| ACRIAN INC 2301 DESCRIPTION 1.5 WATTS - 20 VOLTS 2300 MH2 The 2301 is a common base transistor capable of providing 1.5 watts of C W RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It


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    PDF -65to acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50

    VMOB30

    Abstract: B15-12 B3-12 B15-12-2 B15-12-3 acrian inc acrian
    Text: 17 DE I □IfiST'iö 000120^ 0 ACRIAN INC B15-12 GENERAL DESCRIPTION 15 WATTS -12.5 VOLTS 150-175 MHz The B15-12 is designed for VHF land mobile applications delivering 15 watts of RF power output from a 12.5 volt supply and operates over the 150-175 MHz frequency band.


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    PDF B15-12 B15-12 VMOB30 B3-12 B15-12-2 B15-12-3 acrian inc acrian

    acrian RF POWER TRANSISTOR

    Abstract: Acrian s 46120 BVces Scans-00115701
    Text: 0182998 ACRIAN INC dFJ T~~ 3Jt~s/ 0DP1531 1 46120 GENERAL DESCRIPTION 20 WATTS - 28 VOLTS 1000 MHz The 46120 is a stable common emitter transistor capable of providing 20 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed


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    PDF 0Dpi53i 100mA acrian RF POWER TRANSISTOR Acrian s 46120 BVces Scans-00115701

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
    Text: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.


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    PDF S250-50 S250-50-3 Icq-100 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian
    Text: 0182998 ACRIAN INC GENERAL T? DE jOlflSTTfl □□□lOflfl 0 0912*45 DESCRIPTION 45 WATTS - 50 VOLTS 960-1215 MHz The 0912-45 is an internally matched, common base transistor providing 45 watts of pulsed RF output power across the 960-1215 MHz band. This transistor is


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    PDF -65to T-33-15 50VDC 10OpF acrian RF POWER TRANSISTOR 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian

    transistor 30054

    Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
    Text: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications


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    BM15-12

    Abstract: acrian inc BM1512 acrian
    Text: ACRIAN T? INC b F I 0 10 2 □□□13 DLI a a BM15-12 GENERAL DESCRIPTION The BM15-12 is specifically designed to meet rugged VHF land mobile radio requirements. Internal matching simplifies circuit design and gives excellent broadband performance. Over 140-175 MHz range.


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    PDF BM15-12 D0Q13Db T-33-11 BM15-12-3 acrian inc BM1512 acrian

    DME375A

    Abstract: DME375A-3 acrian inc
    Text: 0182998 ACRIAN INC T7 DE JoiflETTfr 0 D D 1 D S 7 D GENERAL DESCRIPTION This device utilizes the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically for use in airborne DME.


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    PDF 0001D57 T-33-15 DME375A-3 DME375A DME375A-3 acrian inc

    VAM40

    Abstract: VAM80-3 acrian inc 8AM20
    Text: T7 0182998 ACRIAN INC CE^Dlña^Tñ DDDIEMS 1 I D T '-J3-/3 ilK C R lA N VAM B0 GENERAL DESCRIPTION 60 WATTS PEAK - 27 VOLTS 100-150 MHz This device is specifically designed for collector modulated operation in the VHF AM applications in the 100-150 MHz range.


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    PDF Vcc-27V 250pF VAM40 VAM80-3 acrian inc 8AM20

    DME10

    Abstract: DME150 acrian inc
    Text: 0182998 G ENER A L ACRIAN INC 97D 01078 DME 150 D ES C R IP TIO N All devices utilize the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically for use in airborne DME.


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    PDF l-oj-15 Pw-10 VCC-50V 200fosec DME10 DME150 acrian inc

    N1137

    Abstract: S100-12 S100-12-2 S100-12-3 HF power amplifier acrian inc
    Text: 0182998 ACRIAN INC S 1 00-12 GENERAL DESCRIPTION 100 WATTS - 12.5 VOLTS 1.5-30 MHz The S100-12 is designed for common emitter HF, SSB applications from a 12 volt supply. It may be operated Class A, AB or C. The device has emitter ballasting for ruggedness and reliability.


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    PDF S100-12 S100-12 n1137 T-33-15 S100-12-3 lo10A N1137 S100-12-2 S100-12-3 HF power amplifier acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: BAL0105-50 0105-50-2 IMPROVED DROP-IN D105-S0n Scans-00115696
    Text: 01 82 99 8 ACRIAN INC DE g o l f i s t a T7 DOGiaifl T I"D r ’- j j r - f j AN 0105-50 GENERAL DESCRIPTION The 0105-50 is an internally matched balanced transistor specifically designed for broadband Class A, AB or C high power applications from 100-500 MHz.


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    PDF BAL0105-50. D105-S0n/ 00D15E0 T-33-13 acrian RF POWER TRANSISTOR BAL0105-50 0105-50-2 IMPROVED DROP-IN D105-S0n Scans-00115696

    acrian

    Abstract: 25CC TPR175 TPR175-2 TPR175-3 acrian inc
    Text: 0182998 ACRIAN 97D 0 1DRR INC DE o i ñ S T T f l TPR175 G EN ER A L D E S C R IP TIO N The TPR175 utilizes the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically


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    PDF T-33-15 TPR175 Tf-30Â TPR175-3 175WI acrian 25CC TPR175-2 TPR175-3 acrian inc

    B3-28

    Abstract: 2N6199 B25-28 Scans-00115709 B328
    Text: 0182998 ACRIAN INC "t? de i D i a a ^ f l DDoiass 4 | T "D - 2 3 - tf CRIAN !BS9n!íiflKSBP/flii!8BS!BR !í B25-28 2N6199 GENERAL DESCRIPTION The B25-28 is specifically designed for VHF broadband linear power amplifier applications in the 100-200 MHz range. The device is capable of operating in Class A,


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    PDF 23-tf B25-28 100mA B3-28 2N6199 Scans-00115709 B328

    VMIL100

    Abstract: B25-28 acrian inc B12-28 UUU1274 VMIL100-2
    Text: " T - 3 7 - /S ACRIAN INC GENERAL ^7 D E ^ u i ö d - n ö UUU1274 Ô VMIL100 D E S C R IP T IO N 100 WATTS - 28 VOLTS tOO - 200 MHz The VMIL 100 is intended for use in high power VHF 100-200 MHz applications. Internal. matching simplifies design, while gold


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    PDF UUU1274 f-200 100mA Pout-100W, f-175 VMIL100 B25-28 acrian inc B12-28 UUU1274 VMIL100-2