helavia
Abstract: helavia 0201 0003 060 helavia A4 GY013 Pliofine A 720 HELAVIA RED CABLE oxigeno D100 BS3858 9923 hb
Text: HELAVIA standard NEOPRENE sleeves H E L AV I A -30 to +90°C black and coloured for technical properties see D100 Grade 3490 : type white WH 001 - blue BU (002) - green GY (003) - yellow YE (004) - orange OG (005) brown BN (006) - red RD (007) - violet VT (008) - black BK (010) - grey GY (013) - pink PK (015)
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UL94-V2
A23/1
A23/2-3
SI-303
A23/4
D100-02
UL94-V0
helavia
helavia 0201 0003 060
helavia A4
GY013
Pliofine A 720
HELAVIA RED CABLE
oxigeno
D100
BS3858
9923 hb
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797h
Abstract: No abstract text available
Text: 9 E% ! 58789D 49A9 48F5A F 5B- 233E1$%$%' 256 &+ 3D&%%@ 29 9 7 C 45C7 5 B 9 E 9C5 CA9A7 9!!D789A7C "7A B5#5875C BF 1$%% A &%%% ' ) E7A9 D5 B 4*+ 4* 9 FDA789BB75B 9F!D7 75B
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233E1$
D789A7
DA789BB75B
9BB75B
49AAC
8D97FC+
7B58AD,
8D97F
797h
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d2516ec
Abstract: KE4CN2H5A kingston memory schematic
Text: REF: BBONEBLK_SRM BeagleBone Black System Reference Manual BeagleBone Black System Reference Manual Revision C.1 May 22, 2014 Author: Gerald Coley gerald@beagleboard.org Contributing Editor: Robert P J Day Page 1 of 126 Rev C.1 REF: BBONEBLK_SRM BeagleBone Black System
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qmb-111p
Abstract: NC13 ag 19V DC 90w Battery ER10280 X200C AD1985 82551ER CH-4542 DLP31DN201ML4L 52u27
Text: 5 4 Version Date Author Remarks 0.1 05.06.2007 WAM Initial version 0.2 28.11.2007 PHA 3 2 1 Correction of PCI-Bus Correction of minor errors D 0.3 05.03.2008 PHA D Fix VCC SB +5V Standby to VCC (+5V) LCD (X15) Pinout compatible with MSM800 12V Supply removed / Supply the 12V external on .
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MSM800
CH-4542
MSEBX800
330uF
VCC12
SI4453DY
2N7002
qmb-111p
NC13 ag
19V DC 90w
Battery ER10280
X200C
AD1985
82551ER
DLP31DN201ML4L
52u27
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diode sk02
Abstract: 225k 400v capacitor SAW 433 SM-2 kyocera 433 k G military resistors catalog SM93 105KA disc Piezoelectric crystal 1mhz ultrasonic Thin Film leaded Capacitors 150 nf BS9100
Text: A KYOCERA GROUP COMPANY AVX SMPS Caps/High Voltage Caps Tip & Ring/Cap Arrays/Discoidals Advanced Applications Index Introduction – Application Specific MLCs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SMPS Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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S-ADVCAP10M699-C
diode sk02
225k 400v capacitor
SAW 433 SM-2
kyocera 433 k G
military resistors catalog
SM93
105KA
disc Piezoelectric crystal 1mhz ultrasonic
Thin Film leaded Capacitors 150 nf
BS9100
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MT42C4064
Abstract: 0041478 mt4067 MT42
Text: MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP tD- 11 ) sc i 1 * SDQ1 2 SDQ2Í 3 T r /ü ë î 4 DQ1 5 DQ2C ME/WE 7 RAS E8 A6 C9 A5C 10
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MT42C4064
MIL-STD-883,
256-cycle
250mW
MIL-STD-883
0041478
mt4067
MT42
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Untitled
Abstract: No abstract text available
Text: QSFCT245T, 640T, 2245T, 2640T f i High Speed CMOS 8-Bit Transceivers Q S54/74FCT245T q s 5 4 /7 4 fc t6 4 o t QS54/74FCT2245T QS54/74FCT2640T FEATURES/BENEFITS • Pin and function compatible to the 74F245/640 74FCT245/640 and 74FCT245T/640T • CMOS power levels: <7.5 mW static
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QSFCT245T,
2245T,
2640T
S54/74FCT245T
QS54/74FCT2245T
QS54/74FCT2640T
74F245/640
74FCT245/640
74FCT245T/640T
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: Tem ic M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 x 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for
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0Q05b34
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Untitled
Abstract: No abstract text available
Text: SHARP CORP blE D LH5P8128 FEATURES • 131,072 x 8 bit organization • Access times MAX. : 60/80/100 ns • Cycle times (MIN.): 100/130/160 ns • Power consumption: Operating: 572/440/358 mW (MAX.) Standby: 275 nW (MAX.) in self-refresh mode • ûiaü?'Jô OODTbBl bTS « S R P J
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flia07,
-H5P8128
LH5P8128
32-pin,
600-mil
DIP32-P-600)
525-mil
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Untitled
Abstract: No abstract text available
Text: SN74ALS245A. SN74AS245, SN54ALS245A, SN54AS245 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS D2661, DECEMBER 1982 - REVISED M A Y 1986 • 3-State Outputs Drive Bus Lines Directly • P-N-P Inputs Reduce DC Loading • Package Options Include Plastic "Small Outline"
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SN74ALS245A.
SN74AS245,
SN54ALS245A,
SN54AS245
D2661,
300-mil
SN64AS246
SN74ALS245A,
SN74A8246
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C540
Abstract: TIC54 54HC540 HY315
Text: SN54HC540, SN54HCS41 SN74HC540, SN74HC541 OC TAL BUFFERS AN D LINE DRIVERS WITH 3-STATE OUTPUTS D2804, MARCH 1984-RE V ISE D SEPTEMBER 1987 • High-Current 3-State Outputs Drive Bus Lines Directly or Up to 15 LSTTL Loads • Data Flow-Thru Pinout All Inputs on
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SN54HC540,
SN54HCS41
SN74HC540,
SN74HC541
D2804,
1984-RE
300-mil
SN54HC541
SN74HC541
HC541
C540
TIC54
54HC540
HY315
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Untitled
Abstract: No abstract text available
Text: KM44C16004B, KM44C16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or
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KM44C16004B,
KM44C16104B
16Mx4
KM44C16004B
KM44C16104B
tASC26ns,
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Untitled
Abstract: No abstract text available
Text: WAFER SCALE INTEGRATION B'ìE T> E3 I^ S 3 tìt.,ìG 0 0 Q 0 S 2 4 3 Ü1AF WS57C45 WAFERSCALE INTEGRATION, INC. HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES Ultra-Fast Access Time DESC SMD Nos. 5962-88735/5962-87529 Pin Compatible with AM27S45 and
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WS57C45
AM27S45
CY7C245
WS57C45
CY7C245.
DG00S31
T-46-13-29
WS57C45-25T
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3171r
Abstract: No abstract text available
Text: SNS4HCS40, SN54HC541 SN74HC540, SN74HC541 OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS D 2 8 0 4 , M AR CH 1 9 8 4 -R E V IS E D JUNE 1 9 8 9 High-Current 3-State Outputs Drive Bus Lines Directly or Up to 15 LSTTL Loads S N 5 4 H C 5 4 0 , S N 5 4 H C 5 4 1 . . J P AC KAG E
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SNS4HCS40,
SN54HC541
SN74HC540,
SN74HC541
300-m
SN54HC
3171r
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hc541
Abstract: G1.L HC540 SN54HC540 SN54HC541 SN74HC540 SN74HC541
Text: SN54HC540, SN54HCS41 SN74HC540, SN74HC541 OCTAL BUFFERS AND LINE DRIVERS WITH 3 STATE OUTPUTS 028 04 , MARCH 1984-REVISED JUNE 1989 S N 5 4 H C 5 4 0 . S N 5 4 H C 5 4 1 . . . J P AC KA G E S N 7 4 H C 5 4 0 , S N 7 4 H C 5 4 1 . . . D W OR N PAC KAG E High-Current 3-State Outputs Drive Bus
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SN54HC540,
SN54HCS41
SN74HC540,
SN74HC541
1984-REVISED
300-mil
SN54HC240/SN74HC240
HC541
SN54HC541
G1.L
HC540
SN54HC540
SN74HC540
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY ÌJS i CYPRESS 128Kx 8 Static RAM Features Functional Description • H igh speed The CY7C1009 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE] , an active HIGH chip enable (CE2),
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128Kx
CY7C1009
550-m
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Untitled
Abstract: No abstract text available
Text: AT28C010 Mil Features • • • • • • • • • • Fast Read A ccess Tim e - 1 2 0 ns A utom atic Page W rite O peration Internal A ddress and Data Latches for 128-B ytes Internal Control Tim er Fast W rite C ycle Tim e P age W rite C ycle Tim e - 1 0 m s M axim um
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AT28C010
128-B
AT28C010E
EM/883,
LM/883,
AT28C010
M/883,
FM/883,
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HM-6551-9
Abstract: HM6551-9 191te D3302 6551-8
Text: HARRIS SEMICOND SECTOR IS DË| M302S71 DOlObSñ ñ^f~ ' H a r r i s H M Features • • • • • • • • • • • • - 6 256 X T -4 6 -2 3 -0 8 5 5 4 CMOS RAM Pinout TOP VIEW 5 0 |iW Max. L o w S ta n d b y P o w e r.
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M302S71
T-46-23-08
HM-6551
20mW/MHz
220nsMax.
HM-6551-5
HM-6551-9
HM-6551-8
HM-6551-9
HM6551-9
191te
D3302
6551-8
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HYUNDAI i10
Abstract: HY514260B MZN 1000 S HY514260BJC ASW10 1AC25-10-MAY95 HY51426 MP331 VH000 gd042s3
Text: H Y 5 1 4 2 6 0 B S e r ie s 256K x 16-bit CMOS DRAM with 2CAS ‘ • H Y U N D A I DESCRIPTION The HY514260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access
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HY514260B
16-bit
400mil
40pin
40/44pin
0063BJ10)
4b750aa
HYUNDAI i10
MZN 1000 S
HY514260BJC
ASW10
1AC25-10-MAY95
HY51426
MP331
VH000
gd042s3
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TM NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is one member of a high density EPROM Family which range in densities up to 4 Mb. The NM27C128 is a high performance 128K UV Erasable Electri cally Programmable Read Only Memory. It is manufactured with
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NM27C128
072-Bit
NM27C128
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1KJK
Abstract: No abstract text available
Text: tiic k ic o n ALUMINUM ELECTROLYTIC CAPACITORS series Law Impedance Long Life Approved A hi i-Solvent Feature iThnough * Low impedance and high reliability withstanding 5000 hours load life at + 1 05°c 3000/2000 hours for smaller case sizes as specified below .
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J-03-23C
13X40
16X31
18X35
16X35
10X12
10X20
1KJK
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Untitled
Abstract: No abstract text available
Text: IC R 1 MT42C4064 883C AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89952, Class M • JAN 5962-89952, Class B • MIL-STD-883, Class B 24L/400 DIP (D- 11 ) sci [ FEATURES • • • • • • • • • • • • • 1 *
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MT42C4064
MIL-STD-883,
24L/400
256-cycle
MIL-STD-883
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S1DQ10
Abstract: A5C 224
Text: MI T S U B I S H I M E M OR Y/ AS IC blE D • bZ HT ÖS S 0017flfc,5 3^0 ■ M I T I ^ M ITS U B IS H I LSIs M 5 M 4 V 18 1 8 0 0 A J , T P , R T - 6 ,- 7,-8 # 8 t s 5'® " FAST PAGE MODE 18874368-BIT ( 1048576-WORD BY 18-BIT ) DYNAMIC RAM PIN CONFIGURATION (T O P V IE W )
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0017flfc
18874368-BIT
1048576-WORD
18-BIT
18-bit
017flt
M5M4V181800AJ
1048576-WQRD
S1DQ10
A5C 224
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intel 28F256
Abstract: 290166 290168 8F25
Text: in te i A28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -40°C to + 125*C Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase Quick-Pulse Programming Algorithm — 10 /lis Typical Byte-Program — 0.5 Second Chip-Program
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A28F256A
AP28F256A-120
AP28F256A-150
AN28F256A-150
AP-316,
28F256A
ER-21,
28F256
RR-60,
intel 28F256
290166
290168
8F25
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