28F256A Search Results
28F256A Price and Stock
Rochester Electronics LLC N28F256A150IC FLASH 256KBIT PARALLEL 32PLCC |
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N28F256A150 | Bulk | 217 |
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Intel Corporation N28F256A-120 |
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N28F256A-120 | 387 |
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Intel Corporation N28F256A-150 |
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N28F256A-150 | 108 |
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Intel Corporation P28F256A-200 |
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P28F256A-200 | 18 |
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Intel Corporation N28F256A150Flash, 32KX8, 150ns, PQCC32 |
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N28F256A150 | 25,059 | 1 |
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28F256A Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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28F256A |
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256K (32K x 8) CMOS Flash Memory | Scan |
28F256A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 0.5 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp |
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28F256A 2bl75 | |
Contextual Info: ir v tJ . 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Quick-Pulse Programming Algorithm — 10 /j.8 Typical Byte-Program |
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28F256A Cu56A-150 150f1* F256A-120 F256A-150 ER-20, ER-24, RR-60, AP-316, AP-325, | |
28F256A
Abstract: 29024
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00b72fll 28F256A T-V6-/3-27 32-Lead 29024 | |
F256A-200
Abstract: 28F256A P28F256A-150 N28F256A-120 28F256 2SF256 32-PIN 80C186 P28F256A-120
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28F256A P28F256A-120 P28F256A-150 N28F256A-120 N28F256A-150 ER-20, ER-24, RR-60, AP-316, AP-325, F256A-200 28F256A P28F256A-150 28F256 2SF256 32-PIN 80C186 P28F256A-120 | |
intel 28F256
Abstract: intel 28F256 flash 28F256 a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16
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IC191-0322-001 28F256A, 28F256 28F512, 28F010, 28F020 32-LEAD intel 28F256 intel 28F256 flash a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16 | |
a6628
Abstract: intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 28F256
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IC51-0324-453 28F256A, 28F256 28F512, 28F010, 28F020 a6628 intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 | |
Contextual Info: in te i 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 0.5 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5 % Vpp High-Performance Read |
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28F256A 32-Pin 32-Lead P20F256A-15O ER-20, ER-24, RR-60, AP-316, AP-325, | |
28F256A200
Abstract: order 231369 29024
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28F256A 28F256A 32-PIN 32-LEAD N28F256A-120 N28F256A-150 N28F256A-200 P28F256A-120 P2BF256A-150 P28F256A-200 28F256A200 order 231369 29024 | |
P28F256A-150
Abstract: F256A intel 28f256a
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28F256A 32-LEAD P28F256A-120 P28F256A-150 F256A-120 F256A-150 ER-20, ER-24, RR-60, AP-316, P28F256A-150 F256A intel 28f256a | |
Contextual Info: a t i o n a l S e m i c o n d u c t o July 1995 r 28F256ACH 256-Mbit 32-Mbit x 8 , 16-Mbit x 16 Flash Memory Module with Internal Decoding and Boundary Scan I/O Buffers General Description Features The M CM 28F256ACH is a 268,435,456-bit flash m em ory |
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MCM28F256ACH 256-Mbit 32-Mbit 16-Mbit 28F256ACH 456-bit | |
Contextual Info: in tb l. 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ju,s Typical Byte-Program — 0.5 Second Chip-Program ■ Command Register Architecture for Microprocessor/Microcontroller |
OCR Scan |
28F256A ER-20, ER-24, RR-60, AP-316, AP-325, | |
P28F256A-150
Abstract: 28F256A intel 80c186 N28F256A-120 80C186 P28F256A-120 intel 28f256a AP-325, Guide to Flash Memory Reprogramming N28F256A-150
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28F256A 32-Pin 32-Lead P28F256A-120 P28F256A-150 N28F256A-120 N28F256A-150 ER-20 ER-24 RR-60 P28F256A-150 28F256A intel 80c186 N28F256A-120 80C186 P28F256A-120 intel 28f256a AP-325, Guide to Flash Memory Reprogramming N28F256A-150 | |
Contextual Info: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current |
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Am28F020A 32-pin | |
Contextual Info: n FIN A L Am28F256 Advanced 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS Low power consumption ■ ■ — 0.5 second typical chip program ■ — 32-pin PDIP — 32-pin PLCC |
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Am28F256 32-Pin 28F256 | |
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winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
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2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB | |
Device-List
Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
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ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2 | |
Contextual Info: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current |
OCR Scan |
Am28F512A 32-Pin | |
Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time |
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32-Pin 28F512A 2S752Ã 0032fc | |
TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
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2SF256
Abstract: M28F256A
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M28F256A 100ns 10jas M28F256A PDIP32 PLCC32 2SF256 | |
intel 27c512 eprom
Abstract: W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512
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32-pin 9x/2000/XP MX29F040 PM29F004B PM29LV004T PM29F004T PM29LV002B SST39SF010A SST39LF010 SST39VF020 intel 27c512 eprom W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512 | |
M5m27c201j
Abstract: 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J
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Am27C010- Am27C010-J Am29F010B-J Am29LV010B-J Am27C020-J Am29F002B-J Am29F002T-J Am27C040-J Am27H010 M5m27c201j 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J | |
Contextual Info: FINAL AMDH 28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current |
OCR Scan |
Am28F256A 32-Pin 100speed | |
Contextual Info: in ie l 28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -40°C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 ¡jl s Typical Byte-Program — 0.5 Second Chip-Program |
OCR Scan |
A28F256A 32-LEAD AP28F256A-120 AP28F256A-150 AN28F256A-150 AP-316, 28F256A ER-21, 28F256 |