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    Nexperia BZT52H-A16-QX

    BZT52H-A16-Q/SOD123F/SOD2
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    Nexperia BZX384-A16-QX

    BZX384-A16-Q/SOD323/SOD2
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    DigiKey BZX384-A16-QX Cut Tape 1,535 1
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    BZX384-A16-QX Digi-Reel 1,535 1
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    Mouser Electronics BZX384-A16-QX 4,192
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    Panduit Corp UTP6A16-Q

    COPPER PATCH CORD, CAT 6A, OFF W
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    Schneider Electric LA9CA16QTG

    SEL.SW.3POS&DIR.SPLY_P/L
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    Mouser Electronics LA9CA16QTG
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    Newark LA9CA16QTG Bulk 1
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    Nexperia BZX84-A16-QR

    BZX84-A16-Q/SOT23/TO-236AB
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    Mouser Electronics BZX84-A16-QR
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    TTI BZX84-A16-QR Reel 6,000
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    Find more A16Q price and stock on Findchips.com

    A16Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ax3217

    Abstract: 628512ALFP
    Text: HM628512A Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-640B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM628512A is a 4-M bit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 J i m Hi-CMOS process technology. The


    OCR Scan     		PDF HM628512A 512-kword ADE-203-640B 525-mil 400-m 600-mil 28512A ax3217 628512ALFP

    HM628512ALPI-7

    Abstract: a12q A17a DP-32 HM628512ALFPI-7 HM628512ALFPI-8 HM628512ALPI-8 HM628512ALTTI-7 Hitachi Scans-001
    Text: HM628512AI Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-791 Z Preliminary Rev. 0.0 Jun. 20, 1997 D escription T he Hitachi HM 628512A I is a 4-M bit static RAM organized 512-kw ord x 8-bit. It realizes higher density, higher perform ance and low pow er consum ption by em ploying 0 .5 p m H i-C M O S process technology. The


    OCR Scan     		PDF HM628512AI 524288-word ADE-203-791 M628512AI 512-kword 525-mil 400-mil 600-mil D-85622 HM628512ALPI-7 a12q A17a DP-32 HM628512ALFPI-7 HM628512ALFPI-8 HM628512ALPI-8 HM628512ALTTI-7 Hitachi Scans-001

    TSOP032-P-0820-B

    Abstract: CXK58110OTM
    Text: SONY CX K 58110 OTM/YM •12LB 131072-word x 8-bit High Speed CMOS Static RAM Description CXK58110OTM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. It is suitable for portable and battery back-up systems by adopting TSOP packages correspond to 2.7 to 5.5V


    OCR Scan     		PDF CXK58110OTM/YM 131072-word CXK58110OTM/YM CXK581100TM: CXK581100YM: 240ns 120ns CXK581 CXK581100TM CXK581100YM TSOP032-P-0820-B CXK58110OTM

    27C101

    Abstract: No abstract text available
    Text: HN27C10 1P/FP Series 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The H N 27C 101P Series are 131072-word x 8-bit one time electrically programmable RO M . In itially, all bits of 1 IN 2 7 C IO ] S eries the H N 27C 101 P/FP series are in the " 1 " state output high .


    OCR Scan     		PDF HN27C10 131072-word 27C101

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


    OCR Scan     		PDF

    HM628512BLP-5SL

    Abstract: A17a DP-32 HM628512B HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-7 HM628512BLP-7SL HM628512BLTT7
    Text: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.


    OCR Scan     		PDF HM628512B 512-kword ADE-203-903B 525-mil 400-mil 600-mil HM628512BLP-5SL A17a DP-32 HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-7 HM628512BLP-7SL HM628512BLTT7

    Untitled

    Abstract: No abstract text available
    Text: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.


    OCR Scan     		PDF HM62V8512B 512-kword ADE-203-905 525-mil 400-mil

    Untitled

    Abstract: No abstract text available
    Text: AKN62321A Series AKN62331A Series 131072-Word x 8-Bit CMOS Mask Programmable ROM PIN CONFIGURATION AKN62321A, AKN62331A Series is a 1-Mbit CMOS maskprogramable ROM organized to 131072-word x 8-bit. It can be operated with a battery because of low power consumption. The


    OCR Scan     		PDF AKN62321A AKN62331A 131072-Word AKN62321A, N62331 N62321

    FP-32D package

    Abstract: A18Q HM62V8512ALFP-10
    Text: HM62V8512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-642 Z Preliminary Rev. 0.0 Sep. 30, 1996 Description The Hitachi HM62V8512A is a 4-Mbit static RAM organized 512-kword X 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (Am Hi-CMOS process


    OCR Scan     		PDF HM62V8512A 524288-word ADE-203-642 512-kword 525-mil 400-mil HM62V8512ALTT FP-32D package A18Q HM62V8512ALFP-10

    Untitled

    Abstract: No abstract text available
    Text: SONY | CXK5T81OOOATN/AYN - 1 O L L X /1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Preliminary Description The CXK5T81 OOOATN/AYN is a high speed CMOS static RAM organized as 131072-words by 8-bits. Special feature are low power consumption and


    OCR Scan     		PDF CXK5T81O 131072-word CXK5T81 131072-words -10LLX 100ns 120ns -12LLX

    A17E

    Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L
    Text: SHARP LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION • High performance read access time The LH 28F320S 3-L/S3H -L flash m em ories with Sm art 3 technology are high-density, low-cost,


    OCR Scan     		PDF LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 56-pin P056-ff' 80-ball LH28F320S3XX-L11 LH28F320S3XX-L14 SSOP056-P-0600) FBGA080/064-P-0818) A17E LH28F320S3H-L LH28F320S3-L

    A17E

    Abstract: 56-PIN
    Text: SHARP LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION • High performance read access time The LH 28F320S 5-L/S5H -L flash m em ories with Sm art 5 technology are high-density, low-cost,


    OCR Scan     		PDF LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 56-pin P056--F0600) 80-ball W64-Pili818) LH28F320S5XX-L90 LH28F320S5XX-L12 SSOP056-P-0600) A17E

    VDR 14D

    Abstract: zd107
    Text: Preliminary CMOS SRAM KM68U1000BLI / Ll-L 128Kx8 Bit Low Voltage & Industrial Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C > Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165(iW (max.)L-Version


    OCR Scan     		PDF KM68U1000BLI 128Kx8 100ns 132mW KM68U1000BLGI/BLGI-L: 525mil) KM68U1000BLTI/BLTI-L KM68U1000BLRI/BLRI-L: 68U1DOOBLI/BLI-L 576-bit VDR 14D zd107

    A6az

    Abstract: A12Q AKN62314BF AKN62314BFZ AKN62314BP AKN62314BPZ AKN62324BF AKN62324BP A16Q a15q
    Text: AKN62314B Series AKN62324B Series 524288-Word x 8-Bit CMOS Mask Programmable ROM PIN CONFIGURATION A K N 62314B , A K N 6 23 24 B Series is a 4-Mbit CMOS mask- programable R O M organized as 524288-w ord x 8-bits. It can be operated with a battery because of low power consumption. The


    OCR Scan     		PDF AKN62314B AKN62324B 524288-Word AKN62314B, AKN62314BP 32-pin AKN62314BPZ AKN62324BP A6az A12Q AKN62314BF AKN62314BFZ AKN62324BF A16Q a15q

    A16Q2

    Abstract: No abstract text available
    Text: sony . C X K 5 8 1 1 0 O T M /Y M 131072-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 8 1 10OTM /YM is a 1M bits, 131072 words by 8 bits, C M O S static RAM . It Is suitable for portable and C XK 58110OTM 32 pin TS O P Plastic C X K 58110OYM


    OCR Scan     		PDF 131072-word 10OTM 58110OTM 58110OYM XK581100TM 581100YM CXK581 10OTM TSQPO32-P-O02O-A 10OYM A16Q2

    Untitled

    Abstract: No abstract text available
    Text: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process


    OCR Scan     		PDF HM62W8512B 512-kword ADE-203-904 525-mil 400-mil

    A16Q2

    Abstract: No abstract text available
    Text: HM62W8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-904B (Z) Rev. 1.0 Dec. 17, 1998 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( Am Hi-CMOS process


    OCR Scan     		PDF HM62W8512B 512-kword ADE-203-904B 525-mil 400-milTSOP A16Q2

    Untitled

    Abstract: No abstract text available
    Text: HN62321A Series HN62331A Series 131072-Word x 8-Bit CMOS Mask Programmable ROM HN62321A, HN62331A Series is a 1-Mbit CMOS maskprogramable ROM organized to 131072-word x 8-bit. It can be operated with a battery because of low power consumption. The large capacity of 1M bits is optimum for a kanji character generator.


    OCR Scan     		PDF HN62321A HN62331A 131072-Word HN62321A,