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    A12Q Search Results

    A12Q Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TL4051A12QDBZT Texas Instruments Precision Micropower Shunt Voltage Reference 3-SOT-23 -40 to 125 Visit Texas Instruments Buy
    TL4051A12QDBZR Texas Instruments Precision Micropower Shunt Voltage Reference 3-SOT-23 -40 to 125 Visit Texas Instruments Buy
    TL4051A12QDCKR Texas Instruments Precision Micropower Shunt Voltage Reference 5-SC70 -40 to 125 Visit Texas Instruments Buy
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    A12Q Price and Stock

    Nexperia BZX84-A12-QR

    DIODE ZENER 12V 250MW TO236AB
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    DigiKey BZX84-A12-QR Reel 3,000 3,000
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    Mouser Electronics BZX84-A12-QR 760
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    TME BZX84-A12-QR 1
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    Avnet Asia BZX84-A12-QR 8 Weeks 6,000
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    Avnet Silica BZX84-A12-QR 10 Weeks 3,000
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    EBV Elektronik BZX84-A12-QR 10 Weeks 3,000
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    Nexperia BZT52H-A12-QX

    DIODE ZENER 12V 375MW SOD123F
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    DigiKey BZT52H-A12-QX Digi-Reel 808 1
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    BZT52H-A12-QX Cut Tape 808 1
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    Avnet Americas BZT52H-A12-QX Reel 8 Weeks 6,000
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    Mouser Electronics BZT52H-A12-QX 4,824
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    Avnet Silica BZT52H-A12-QX 10 Weeks 3,000
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    EBV Elektronik BZT52H-A12-QX 10 Weeks 3,000
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    TE Connectivity AV1910PA12Q04

    SWITCH PUSHBUTTON SPDT 3A 250V
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    DigiKey AV1910PA12Q04 Tray 298 1
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    Mouser Electronics AV1910PA12Q04 43
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    Master Electronics AV1910PA12Q04
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    NMB Technologies Corporation 06025SA-12Q-ET-D0

    FAN AXIAL 60X25MM 12VDC WIRE
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    DigiKey 06025SA-12Q-ET-D0 Bulk 294 1
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    Neutron USA 06025SA-12Q-ET-D0 50
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    Sager 06025SA-12Q-ET-D0 1
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    TE Connectivity AV12F10EA12Q04

    AV12 SPM 0.1A/24VDC R&G LED 12V
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    DigiKey AV12F10EA12Q04 Tray 120 1
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    Avnet Americas AV12F10EA12Q04 Tray 120
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    Mouser Electronics AV12F10EA12Q04 106
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    Newark AV12F10EA12Q04 Bulk 120 1
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    TTI AV12F10EA12Q04 Each 120
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    A12Q Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TEXAS INSTR {ASIC/nEHORY} PRODUCT PREVIEW 77 dT | AGITES 0040^40 5 TMX27PC128 131,072-BIT PROGRAMMABLE READ ONLY M EM O RY N O V E M B E R 1985 x 8 TOP VIEW vppC Pin C om patible w ith E xistin g 6 4 K and 1 2 8 K EPROM s 1 ^J28 A12Q 2 A7C A6C A ll Inputs/O utputs Fully T T L Com patible


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    TMX27PC128 072-BIT PDF

    27pc256

    Abstract: TMS27PC256 26HA13
    Text: ADVANCE INFORMATION ^ fOt ¿r-I / o 7 L-Cf ^ TMS27PC256 W ? 262,144-BIT PROGRAMMABLE READ-ONLY M E M O R Y ^ ï-P-' N O V EM B ER 1985 - R EV IS E D A U G U S T 1986 Organization . . . 3 2 K x 8 N PACKAGE {T O P V IE W Single 5-V Pow er Supply Vpp[_ A12Q


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    TMS27PC256 144-BIT 32Kx8 27PC256-17 27PC256-20 27PC256-25 27PC256-30 27PC256-45 27PC256-1 27PC256-2 27pc256 26HA13 PDF

    NCC equivalent

    Abstract: No abstract text available
    Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors


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    TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks


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    TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT JS851A-NO 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80 PDF

    ALY 34

    Abstract: 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34
    Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES S M JS 851A - N O VEM BER 1997 - REVISED M ARCH 1998 Organization . . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks


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    TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT SMJS851A 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80 ALY 34 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34 PDF

    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary . / * < > • ^ „ LG Sem icon CO.,Ltd. G M 7 2 V 2 8 4 4 1 A T /A L T 8,388,608 WORD x 4 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM Description TheGM72V28441 AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic


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    TheGM72V28441 GM72V28441 PC100, PC100 GM72V28441AT/ALT GM72V28441AT/ALT TTP-54D) PDF

    Untitled

    Abstract: No abstract text available
    Text: HN623257P, HN623257F 32768-word x 8-bit CMOS Mask Programmable Read Only Memory Th e H N 6 2 3 2 5 7 P /F is a 2 5 6 -k b it C M OS mask-programmable R O M organized as 3 2 7 6 8 words by 8 bits. HN 623257P Realizing low power consumption, this m em ory is allowed fo r battery operation.


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    HN623257P, HN623257F 32768-word 623257P 150ns 100mW A12QI PDF

    27PC128

    Abstract: No abstract text available
    Text: PRODUCT PREVIEW TMX27PC128 131.072-BIT PROGRAMMABLE READ ONLY MEMORY N O V E M B E R 1985 N PACKAGE TOP VIEW vppC 3 vcc • Pin Compatible with Existing 64K and 128K EPRO M s All Inputs/Outputs Fully TTL Compatible A7C 3 26 3 A 1 3 • A 6£ 4 25 J A 8 •


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    TMX27PC128 072-BIT 27PC128-2, 27PC128, 27PC128-25 27PC128-3, 27PC128-4, 27PC128-45 24programming, 27PC128 PDF

    2732A eprom

    Abstract: intel 2764 2764 2764 pin diagram INTEL 2764 EPROM ROM 2764 2764 eprom PINOUT pRoM 2764 EPROM 2764 2764 rom
    Text: in te T 2764 8K x 8 UV ERASABLE PROM • Pin Compatible to 2732A EPROM 200 ns (2764-2) Maximum Access Time . . . HMOS*-E Technology ■ Industry Standard P inout. . . JEOEC Approved Compatible to High Speed 8mHz 8086-2 MPU . . . Zero WAIT State ■ Low Active Current.!00mA Max.


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    100mA 536-bit 250ris 200ns. 2764s 2732A eprom intel 2764 2764 2764 pin diagram INTEL 2764 EPROM ROM 2764 2764 eprom PINOUT pRoM 2764 EPROM 2764 2764 rom PDF

    MBM27C256A-20CZ

    Abstract: MB89P
    Text: • DESCRIPTION The MB89910 series has been developed as a general-purpose version £>f the F2MC*^8 L fam ily consisting of proprietary 8-bit, single-chip microcontrollers. In addition to a compact instruction set, the microcontrollers contain'a variety of peripheral functions such as


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    MB89910 F9703 MBM27C256A-20CZ MB89P PDF

    Untitled

    Abstract: No abstract text available
    Text: mV Y "fi I II II il A U R U I H Y 6 3 V 8 1 0 0 A S /H Y 6 3 V 8 1 O O A L 128K X 8 B it I l l FAST SRAM PRELIMINARY DESCRIPTION The HY63V8100 is a 1,048,576 -bits high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The HY63V8100 uses eight common input and output lines and has an output enable pin which operates


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    HY63V8100 20/25/30ns -HY63V8100AS 100mA 0JJ12) 1DG03-22-MA HY63V8100A HY63V8100AJ HY63V8100ALJ PDF

    A12Q

    Abstract: No abstract text available
    Text: Creation Date: July 31, 1998 Revision: October 7, 1998 ptos • s e m ic o n d u c t o r PRELIMINARY A P 9 A 1 1 4 /A P 9 A 1 1 4 L 5V, 64K x 16, Very High-Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Features • • • • • • •


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    V/250 44-pin, 400-mil 44-pin A12Q PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS28F004Axy, TMS28F400Axy 52 42 88 BY 8-B IT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A - JANUARY 1996 - REVISED AUGUST 1997 • Organization . . . 524288 By 8 Bits 262144 By 16 Bits • Array-Blocking Architecture - One 16K-Byte Protected Boot Block


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    TMS28F004Axy, TMS28F400Axy IT/262144 16-BIT SMJS829A 16K-Byte 96K-Byte 128K-Byte 28F400Axy PDF

    O09P

    Abstract: No abstract text available
    Text: TMS29LF400T, TMS29LF400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES • • • • • • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors - One 32K-Byte/16K-Word Sector


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    TMS29LF400T, TMS29LF400B 8-BIT/262144 16-BIT 44-Pin 48-Pin O09P PDF

    a14q

    Abstract: No abstract text available
    Text: TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits


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    TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 8-BJT/524288 16-BIT a14q PDF

    pc 2561

    Abstract: S27C256 27PC256NL
    Text: TMS27C256 262.144-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC256 262,144-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEMBER 1 9 8 4 -REVISED MARCH 1988 This Data Sheet is Applicable to A ll TMS27C256S a nd TMS27PC256s Sym bolized w ith Code " A " as Described on Page 12.


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    TMS27C256 144-BIT TMS27PC256 TMS27C256S TMS27PC256s pc 2561 S27C256 27PC256NL PDF

    2764 eprom PINOUT

    Abstract: 4Kx8 sram ttl 2764 RAM 4Kx8 rom ttl 4kx8 sram INTEL 2764 EPROM INTEL 2764 SRAM 4KX8 4kx8 static ram ttl 2Kx8 SRAM
    Text: A O M IN ! OMIF©fôlîMïrD@Kl in te i 2048 X 2K X 8 8-BIT STATIC RAM Fully Static Operation; No Clocks, Refresh or Latches Two Line Control, CE Controls PowerDown, OE Controls Output Buffers — Eliminates Bus Contention EPROM Compatible Pinout 150 ns Maximum Access Time


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    24-Pin 384-bit 28-pin 2764s 2764 eprom PINOUT 4Kx8 sram ttl 2764 RAM 4Kx8 rom ttl 4kx8 sram INTEL 2764 EPROM INTEL 2764 SRAM 4KX8 4kx8 static ram ttl 2Kx8 SRAM PDF

    ad9a

    Abstract: No abstract text available
    Text: Preliminary MXIC MX23L6410 64M-Bit Mask ROM 8/16 Bit Output O R D E R INFORMATION FEATURES • Bit organization Part No. A ccess Time Package MX23L6410MC-12 120ns 44 pin SOP MX23L6410MC-15 150ns 44 pin SOP MX23L6410TC-12 120ns 48 pin TSOP 8M x 8 (byte mode)


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    MX23L6410 64M-Bit MX23L6410MC-12 120ns MX23L6410MC-15 150ns MX23L6410TC-12 MX23L6410TC-15 ad9a PDF

    HM62256BLP-7SL

    Abstract: hm62256blfp-7t
    Text: ADE-203-135C Z HM62256B Series 32,768-word x 8-bit High Speed CMOS Static RAM HITACHI The Hitachi HM62256B is a CMOS static RAM organized 32-kword x 8-bit. It realizes higher perfo rm an ce and low pow er consum ption by employing 0.8 |jm Hi-CMOS process technology.


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    ADE-203-135C HM62256B 768-word 32-kword HM62256BLP-7 HM62256BLP-7SL 600-mil 28-pin DP-28) hm62256blfp-7t PDF

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: S O N Y 1 C X K 5 T 8 5 1 2 T M /T N 65536-word x 8-bit High Speed CMOS Static RAM -1 0 L L X /1 2 L L X Preliminary Description The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and


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    65536-word CXK5T8512TM/TN 65536-words CXK5T8512TM CXK5T8512TM/TN-1OLLX CXK5T8512TM/TN-12LLX 100ns 120ns CXK5T8512TM/TN-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS29LF4Q0T, TMS29LF400B 524288 BY 8-BIT/262144 BY 15-BIT FLASH MEMORIES * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation f • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector


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    TMS29LF4Q0T, TMS29LF400B 8-BIT/262144 15-BIT SMJS841A 16K-Byte/One 32K-Byte/16K-Word 64K-Byte/32K-Word TMS29LF400T, PDF

    texas ic 6116

    Abstract: No abstract text available
    Text: TMS27C512 524.288-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC512 524,288 BIT PROGRAMMABLE READ-ONLY MEMORY N O VEM BER 1985 - This Data Sheet is Applicable to AH TMS27C512s and TMS27PC512s Symbolized w ith Code "A " as Described on Page 12. J AND N PACKAGE


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    TMS27C512 288-BIT TMS27PC512 TMS27C512s TMS27PC512s 27C512-1 27C/PC512-2 27C/PC512 27C/PC512-3 27C512-17 texas ic 6116 PDF