A14Q Search Results

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

A13G

Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Contextual Info: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and

Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks

HM628512ALPI-7

Abstract: a12q A17a DP-32 HM628512ALFPI-7 HM628512ALFPI-8 HM628512ALPI-8 HM628512ALTTI-7 Hitachi Scans-001
Contextual Info: HM628512AI Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-791 Z Preliminary Rev. 0.0 Jun. 20, 1997 D escription T he Hitachi HM 628512A I is a 4-M bit static RAM organized 512-kw ord x 8-bit. It realizes higher density, higher perform ance and low pow er consum ption by em ploying 0 .5 p m H i-C M O S process technology. The

ALY 34

Abstract: 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34
Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES S M JS 851A - N O VEM BER 1997 - REVISED M ARCH 1998 Organization . . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks

P0820A

Contextual Info: SONY CXK581000ATM/AYM/AM/AP -55SL/70SL/1OSL 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by CXK581000ATM CXK581000AYM 32 pin TSOP Plastic 32 pin TSOP (Plastic)

Contextual Info: i X28C010 1M m 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 120ns • Simple Byte and Page Write — Single 5V Supply — No External High Voltages or VPP Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms

xlxx

Abstract: xi12 YI11 yr03
Contextual Info: P LESSEY SEMICONDUCTORS 13E D • 725 1513 OOlOObb 3 PLESSEY W Semiconductors ■ PDSP16112/PDSP16112A 16 x 12 BIT COMPLEX MULTIPLIER (SU P ER SED ES MARCH 1987 EDITION The PDSP16112/PDSP16112A w ill m ultiply a com plex (16 + 16) bit data word by a com plex (12 + 12) bit coefficient

33A1S

Abstract: HY628400LG-I
Contextual Info: HY628400-I Series •HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

MA1002 digital LED Clock Module

Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
Contextual Info: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH

Contextual Info: TMS28F008Axy TMS28F800Axy 8 3 8 8 6 0 8 BOOT-BLOCK FLASH MEMORIES _ * * 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block - Seven 128K-Byte Main Blocks - One 16K-Byte Protected Boot Block

O09P

Contextual Info: TMS29LF400T, TMS29LF400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES • • • • • • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors - One 32K-Byte/16K-Word Sector

a14q

Contextual Info: TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits

CDP6805E2CD

Abstract: CDP6805E3E CDP6805E2E CDP6805E3CE
Contextual Info: HARRIS S E M I C O N D U C T O R CDP6805E2, CDP6805E2C, CDP6805E3, CDP6805E3C March 1998 CMOS 8 -Bit Microprocessor Hardware Features Description • Full Speed Operating P ow er 5 V .35mW Typ T h e C D P 6 8 0 5 E 2 and C D P 68 05E 3 M icro proce ssors Unit

Contextual Info: QSFCT16244T Advanced Information Q High Speed CMOS 16-Bit Buffers QS74FCT16244T FEATURES/BENEFITS TTL-compatible input and output levels Ground bounce controlled outputs Reduced output swing of 0-3.5V Military product compliant to MIL-STD-883 • 16-bit Function compatible to the 74F244

FP-32D package

Abstract: A18Q HM62V8512ALFP-10
Contextual Info: HM62V8512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-642 Z Preliminary Rev. 0.0 Sep. 30, 1996 Description The Hitachi HM62V8512A is a 4-Mbit static RAM organized 512-kword X 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (Am Hi-CMOS process

Contextual Info: HD66840-LCD Video Interface Controller LVIC D escription • The HD66840 LVIC interface controller con­ verts th e stan d ard video signals R, G, B for CRT display into LCD data. It enables a CRT display system to b e replaced by an LCD

Contextual Info: S O N Y 1 C X K 5 T 8 5 1 2 T M /T N 65536-word x 8-bit High Speed CMOS Static RAM -1 0 L L X /1 2 L L X Preliminary Description The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and

TMS29F400B

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES * Single Power Supply Supports 5 V ±10% Read/Write Operation • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

Contextual Info: TMS28F004Axy, TMS28F400Axy 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES _ SMJS829A - JANUARY 1996 - REVISED AUGUST 1997 Organization . . . 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture

KM62V256CLTGI-10L

Abstract: 62V256
Contextual Info: KM62V256C, KM62U256C Family CMOS SRAM Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. Historv Draft Data Remark 0.0 Design target February 12th 1993 Advance 0.1 Initial draft November 2nd 1993 Preliminary 1.0

VDR 14D

Abstract: zd107
Contextual Info: Preliminary CMOS SRAM KM68U1000BLI / Ll-L 128Kx8 Bit Low Voltage & Industrial Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C > Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165(iW (max.)L-Version

M628512

Abstract: HM628512LRR-7A
Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-236F Z Rev. 6.0 Jun. 9, 1995 Description The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kwordx 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 (Xm Hi-CMOS process technology. The

Contextual Info: 131,072 W O R D S x 8 BIT STATIC RAM PRELIMINARY DESCRIPTION The TC551001API is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz Typ. and