UN1213
Abstract: UNR1213 XP01213 XP1213
Text: Composite Transistors XP01213 XP1213 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1213(UN1213) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
|
Original
|
PDF
|
XP01213
XP1213)
UNR1213
UN1213)
UN1213
XP01213
XP1213
|
UN1213
Abstract: XP1213
Text: Composite Transistors XP1213 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1213 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02
|
Original
|
PDF
|
XP1213
UN1213
UN1213
XP1213
|
analog switching ic
Abstract: 2SK1103 UN1213 UNR1213 XN08081 XN8081
Text: Composite Transistors XN08081 XN8081 Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element • 2SK1103 + UNR1213 (UN1213)
|
Original
|
PDF
|
XN08081
XN8081)
2SK1103
UNR1213
UN1213)
analog switching ic
2SK1103
UN1213
UNR1213
XN08081
XN8081
|
UN1213
Abstract: UNR1213 XP04213 XP4213
Text: Composite Transistors XP04213 XP4213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1213(UN1213) x 2 elements • Parameter Collector toMaximum base voltage Absolute Rating Collector to emitter voltage of
|
Original
|
PDF
|
XP04213
XP4213)
UNR1213
UN1213)
UN1213
XP04213
XP4213
|
UN1213
Abstract: UNR1213 XN01213 XN1213
Text: Composite Transistors XN01213 XN1213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1213(UN1213) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
|
Original
|
PDF
|
XN01213
XN1213)
UNR1213
UN1213)
UN1213
XN01213
XN1213
|
2SK1103
Abstract: UN1213 XP8081
Text: Composite Transistors XP8081 Silicon N-channel junction FET Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 1 6 2 5 3 4 0 to 0.1 2SK1103+UN1213 (transistors with built-in resistor) 0.12 –0.02 0.9±0.1
|
Original
|
PDF
|
XP8081
2SK1103
UN1213
UN1213
XP8081
|
UN1213
Abstract: UNR1213 XP06213 XP6213
Text: Composite Transistors XP06213 XP6213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1213(UN1213) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter
|
Original
|
PDF
|
XP06213
XP6213)
UNR1213
UN1213)
UN1213
XP06213
XP6213
|
2SK1103
Abstract: UN1213 UNR1213 XP08081 XP8081
Text: Composite Transistors XP08081 XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 0.65 1 6 2 5 3 4 +0.05 0.12 –0.02 2SK1103+UNR1213(UN1213) (transistors with built-in resistor)
|
Original
|
PDF
|
XP08081
XP8081)
2SK1103
UNR1213
UN1213)
UN1213
XP08081
XP8081
|
UN111F
Abstract: UN1213 UNR111F UNR1213 XP03383
Text: Composite Transistors XP03383 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UNR1213(UN1213) + UNR111F(UN111F) • Absolute Maximum Ratings Parameter
|
Original
|
PDF
|
XP03383
UNR1213
UN1213)
UNR111F
UN111F)
UN111F
UN1213
XP03383
|
UN1213
Abstract: XP4213
Text: Composite Transistors XP4213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1213 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage
|
Original
|
PDF
|
XP4213
UN1213
UN1213
XP4213
|
UN1213
Abstract: XP6213 TR123
Text: Composite Transistors XP6213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1213 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings
|
Original
|
PDF
|
XP6213
UN1213
UN1213
XP6213
TR123
|
UN111F
Abstract: UN1213 XP03383
Text: Composite Transistors XP03383 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UN1213+UN111F • Absolute Maximum Ratings Parameter 1 : Emitter(Tr1)
|
Original
|
PDF
|
XP03383
UN1213
UN111F
UN111F
XP03383
|
UN1213
Abstract: XN1213
Text: Composite Transistors XN1213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1213 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
|
Original
|
PDF
|
XN1213
UN1213
UN1213
XN1213
|
XN4313
Abstract: No abstract text available
Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.50+0.10 –0.05 • UNR1213 (UN1213) + UNR1113 (UN1113) Tr1 1.1+0.2
|
Original
|
PDF
|
XN04313
XN4313)
UNR1213
UN1213)
UNR1113
UN1113)
SC-74
XN4313
|
|
UN1119
Abstract: UN1213 XP04387
Text: Composite Transistors XP04387 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1213+UN1119 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings
|
Original
|
PDF
|
XP04387
UN1213
UN1119
UN1119
XP04387
|
UN1213
Abstract: XN1214
Text: Composite Transistors XN1214 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1213 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
|
Original
|
PDF
|
XN1214
UN1213
UN1213
XN1214
|
UN1119
Abstract: UN1213 XP04387
Text: Composite Transistors XP04387 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1213+UN1119 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings
|
Original
|
PDF
|
XP04387
UN1213
UN1119
UN1119
XP04387
|
UN1213
Abstract: UNR1213 XN04213 XN4213
Text: Composite Transistors XN04213 XN4213 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3
|
Original
|
PDF
|
XN04213
XN4213)
UNR1213
UN1213)
UN1213
XN04213
XN4213
|
Untitled
Abstract: No abstract text available
Text: Composite Transistors XP04313 XP04313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
|
Original
|
PDF
|
XP04313
XP04313)
UNR1213
UN1213)
UNR1113
UN1113)
|
UNR1210
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ
|
Original
|
PDF
|
UNR121x
UN121x
UN1210)
UN1211)
UN1212)
UN1213)
UN1214)
UN1215)
UN1216)
UN1217)
UNR1210
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
|
UN111F
Abstract: UN1213 UNR111F UNR1213 UP03383
Text: Composite Transistors UP03383 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) Unit: mm +0.05 (0.30) 4 • Features 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
|
Original
|
PDF
|
UP03383
UNR1213
UN1213)
UNR111F
UN111F)
UN111F
UN1213
UNR111F
UNR1213
UP03383
|
UN1121
Abstract: UN1213 XN04382
Text: Composite Transistors XN04382 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Ratings Unit VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current
|
Original
|
PDF
|
XN04382
UN1121
UN1213
XN04382
|
UN1213
Abstract: XN4213
Text: Composite Transistors XN4213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Collector to base voltage Rating of Collector to emitter voltage element Collector current +0.1 +0.1 Ta=25˚C Symbol Ratings
|
Original
|
PDF
|
XN4213
UN1213
XN4213
|
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
|
Original
|
PDF
|
P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
|