TPC8301 Search Results

Contextual Info: TOSHIBA TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-MOSVI TPC8301 LITHIUM ION BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS Unit in mm PORTABLE MACHINES AND TOOLS Low Drain-Source ON Resistance : RDS(ON)-95mO (Typ.) High Forward Transfer Admittance : |Yfs| = 4S (Typ.)

DEVICE MARKING CODE 3B

Abstract: TPC8301
Contextual Info: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance

Contextual Info: TO SHIBA TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR T P f SILICON P CHANNEL MOS TYPE L2- tt-MOSVI s i m LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC ORTABLE MACHINES AND TOOLS Low Drain-Source ON Resistance : Rd S (ON)= 95mO (Typ.) High Forward Transfer Admittance

transistor 1127

Contextual Info: TPC8301 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SVI TPC8301 LITHIUM ION BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS Unit in mm nn n n jè. PORTABLE MACHINES AN D TOOLS Low Drain-Source O N Resistance : RdS (O N ) = 95mO (Typ.)

Contextual Info: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance

3b transistor

Abstract: 3B marking TPC8301
Contextual Info: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance

Contextual Info: TOSHIBA TPC8301 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL MOS TYPE L2- tt-M O S V I TPC8301 LITH IU M ION BATTERY INDUSTRIAL APPLICATIONS NOTE BO O K PC PORTABLE M ACHINES A N D TOOLS • • • • Low Drain-Source ON Resistance : Rd S (ON)= 95mO (Typ.)

Contextual Info: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Small footprint due to small and thin package z Low drain−source ON resistance

TPC8301

Contextual Info: TO SH IBA TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8301 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC PORTABLE MACHINES AND TOOLS • Low Drain-Source ON Resistance : Rd S (ON) - 95 mH (Typ.)

TPC8301

Contextual Info: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance

Contextual Info: TPC8301 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR LITHIUM ION BATTERY SILICON P CHANNEL MOS TYPE L2-tt-MOSVI TPC8301 INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 rfi RR R R PORTABLE MACHINES AND TOOLS Low Drain-Source ON Resistance : Rd S (ON) —95mil (Typ.)

Contextual Info: T O SH IB A TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8301 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC A PORTABLE MACHINES AND TOOLS . td - - ntr l~\ irr 's • •LVJ J 8 ( U IN ) ~

Contextual Info: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance

Contextual Info: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

BJT 2n3904

Abstract: transistor r5 3pin 2N3904 fg 680 fan 12v 3pin AN-003 2sb772 G760A G768B SI4435DY-T1
Contextual Info: AN-003 Global Mixed-mode Technology Inc. Application Note 12V Fan Speed Controlling and Driving with G760A or G768B Introduction As the development of the technology, many electronic products have strong computing power. Because that the high computing power IC usually need more electricity, the chip will be getting hotter and hotter

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2