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Skyworks Solutions Inc SI8900B-A01-GS IC ADC 10BIT SAR 16SOIC
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DigiKey	SI8900B-A01-GS	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	SI8900B-A01-GS		1,268		1	1 - 10 - 100 $3.47 1000 $3.1 10000 $2.92	Buy Now
Skyworks Solutions Inc SI8900D-A01-GS IC ADC 10BIT SAR 16SOIC
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DigiKey	SI8900D-A01-GS	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Skyworks Solutions Inc SI8900D-A01-GSR IC ADC 10BIT SAR 16SOIC
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DigiKey	SI8900D-A01-GSR	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	SI8900D-A01-GSR		757		1	1 - 10 - 100 $4.16 1000 $3.72 10000 $3.5	Buy Now
Skyworks Solutions Inc SI8900B-A01-GSR IC ADC 10BIT SAR 16SOIC
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DigiKey	SI8900B-A01-GSR	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	SI8900B-A01-GSR		373		1	1 - 10 - 100 $3.47 1000 $3.1 10000 $2.92	Buy Now
Vishay Siliconix SI8900EDB-T2-E1 MOSFET 2N-CH 20V 5.4A 10MFP
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DigiKey	SI8900EDB-T2-E1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SI8900 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
SI8900B-A01-GS	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC	Original	PDF
SI8900B-A01-GSR	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC	Original	PDF
SI8900D-A01-GS	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC	Original	PDF
SI8900D-A01-GSR	Silicon Laboratories	Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT SRL/UART SOIC	Original	PDF
Si8900EDB	Vishay Intertechnology	Bi-Directional N-Channel 20-V (D-S) MOSFET	Original	PDF
SI8900EDB	Vishay Siliconix	MOSFETs	Original	PDF
Si8900EDB	Vishay Telefunken	Bi-directional N-channel 20-v (d-s) Mosfet	Original	PDF
SI8900EDB-T2-E1	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 5.4A 10-MFP	Original	PDF
SI-8900L	Sanken Electric	Separate Excitation Switching Type with Transformer	Original	PDF

SI8900 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
8900E Abstract: J-STD-020A Si8900EDB sn 4060 Contextual Info: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V	Original	Si8900EDB S-21474--Rev. 26-Aug-02 8900E J-STD-020A sn 4060	PDF
10-SPROCKET Contextual Info: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8900EDB-T2 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B 1.75  0.10 B 5.50  0.05 12.0 +0.30 -0.10 SECTION A-A A SECTION B-B NOTES: 1. 10-sprocket hole pitch cumulative tolerance 0.2.	Original	275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-04476--Rev. 30-Aug-04	PDF
c 5706 Abstract: AN609 Si8900EDB Contextual Info: Si8900EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si8900EDB AN609 08-Aug-07 c 5706	PDF
Si8900EDB Contextual Info: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8900EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX AO KO SECTION B-B	Original	275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-02077--Rev. 13-May-02 93-5224-x Si8900EDB	PDF
si8900 Abstract: AN-635 Contextual Info: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5	Original	Si8900/1/2 10-bit Si8900) Si8901) Si8902) 60-year UL1577 si8900 AN-635	PDF
S1 0780 Abstract: 10-BUMP 8900E J-STD-020A Si8900EDB Contextual Info: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT	Original	Si8900EDB 8900E 08-Apr-05 S1 0780 10-BUMP 8900E J-STD-020A	PDF
8900E Abstract: Si8900EDB Contextual Info: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8900EDB MICRO FOOTr 2X5: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8900EDB T2 Device on Tape Orientation 8900E xxx 8900E xxx 8900E	Original	Si8900EDB 275-mm 8900E Specification--PACK-0023-2 S-50073, 8900E	PDF
Contextual Info: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier	Original	Si8900EDB 8900E 8900E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si8407DB Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB Contextual Info: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3	Original	Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB	PDF
SI8902 Abstract: SI8902D-A01-GS si8901 Contextual Info: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5	Original	Si8900/1/2 10-bit Si8900) Si8901) Si8902) 60-year UL1577 SI8902 SI8902D-A01-GS si8901	PDF
Contextual Info: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier	Original	Si8900EDB 8900E 8900E 11-Mar-11	PDF
S1 0780 Abstract: 8900E J-STD-020A Si8900EDB Contextual Info: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.40 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V	Original	Si8900EDB S-20802--Rev. 01-Jul-02 S1 0780 8900E J-STD-020A	PDF
10-BUMP Abstract: 8900E Si8900EDB ks-110 Contextual Info: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier	Original	Si8900EDB 8900E 18-Jul-08 10-BUMP 8900E ks-110	PDF
31916 Contextual Info: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V	Original	Si8900EDB 8900E 8900E S-31916--Rev. 15-Sep-03 31916	PDF

Si8900EDB Abstract: A1731 Contextual Info: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si8900EDB S-60073Rev. 23-Jan-06 A1731	PDF
Contextual Info: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier	Original	Si8900EDB 8900E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si8900EDB Contextual Info: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si8900EDB 18-Jul-08	PDF
10-BUMP Abstract: 8900E J-STD-020A Si8900EDB Contextual Info: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT	Original	Si8900EDB 8900E S-50066--Rev. 17-Jan-05 10-BUMP 8900E J-STD-020A	PDF
Contextual Info: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) rSS(on) (W) 20 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 APPLICATIONS 0.40 @ VGS = 1.8 V 5.5 D Battery Protection Circuit	Original	Si8900EDB 8900E 8900E 10BUMP S-20217--Rev.	PDF
Contextual Info: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.40 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V	Original	Si8900EDB 8900E 8900E S-21338--Rev. 05-Aug-02	PDF
UP78 Abstract: Aaa SMD MARKING Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and	Original	Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 UP78 Aaa SMD MARKING	PDF
Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI-8100D Abstract: si8100 Si8100DB Contextual Info: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si8100DB 2002/95/EC Si8100DB-T2trademarks 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 SI-8100D si8100	PDF
Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 25hay 11-Mar-11	PDF

SI8900 Search Results

SI8900 Price and Stock

Skyworks Solutions Inc SI8900B-A01-GS

Skyworks Solutions Inc SI8900D-A01-GS

Skyworks Solutions Inc SI8900D-A01-GSR

Skyworks Solutions Inc SI8900B-A01-GSR

Vishay Siliconix SI8900EDB-T2-E1

SI8900 Datasheets (9)

SI8900 Datasheets Context Search

8900E

10-SPROCKET

c 5706

Si8900EDB

si8900

S1 0780

8900E

Si8407DB

SI8902

S1 0780

10-BUMP

31916

Si8900EDB

Si8900EDB

10-BUMP

UP78

SI-8100D