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    Skyworks Solutions Inc SI8901D-A02-GS

    IC ADC 10BIT I2C/SRL SOIC
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    DigiKey SI8901D-A02-GS Tube
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    Rochester Electronics SI8901D-A02-GS 1,133 1
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    Skyworks Solutions Inc SI8901B-A02-GS

    IC ADC 10BIT SAR 16SOIC
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    Verical SI8901B-A02-GS 3,963 56
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    Rochester Electronics SI8901B-A02-GS 4,238 1
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    Skyworks Solutions Inc SI8901B-A01-GS

    IC ADC 10BIT SAR 16SOIC
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    Skyworks Solutions Inc SI8901D-A01-GS

    IC ADC 10BIT SAR 16SOIC
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    Skyworks Solutions Inc SI8901D-A02-GSR

    IC ADC 10BIT I2C/SRL SOIC
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    Verical SI8901D-A02-GSR 19,151 43
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    Rochester Electronics SI8901D-A02-GSR 19,151 1
    • 1 $7.19
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    Find more SI8901 price and stock on Findchips.com

    SI8901 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8901A Siliconix DMOS Double Balanced Mixers Scan PDF
    SI8901B-A01-GS Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901B-A01-GSR Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901B-A02-GS Silicon Laboratories IC ADC 10BIT SAR 16SOIC Original PDF
    SI8901B-A02-GSR Silicon Laboratories IC ADC 10BIT SAR 16SOIC Original PDF
    SI8901CY Siliconix DMOS Double Balanced Mixers Scan PDF
    SI8901D-A01-GS Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901D-A01-GSR Silicon Laboratories Data Acquisition - Analog to Digital Converters (ADC), Integrated Circuits (ICs), IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901D-A02-GS Silicon Laboratories IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901D-A02-GSR Silicon Laboratories IC ADC 10BIT I2C/SRL SOIC Original PDF
    SI8901EDB Vishay Siliconix MOSFETs Original PDF
    SI8901EDB Vishay Telefunken Bi-directional P-channel 20-v (d-s) Mosfet Original PDF
    SI8901EDB-T2-E1 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 3.5A 6-MFP Original PDF

    SI8901 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    7009 A 8290

    Abstract: SI8901 AN609 Si8901EDB
    Text: Si8901EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si8901EDB AN609 08-Aug-07 7009 A 8290 SI8901 PDF

    SI8901EDB

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		Si8901EDB 8901E 8901E Si8901EDB-T2Note 63Sn/37Pb S-40852--Rev. 03-May-04 PDF

    si8900

    Abstract: AN-635
    Text: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5


    Original     		Si8900/1/2 10-bit Si8900) Si8901) Si8902) 60-year UL1577 si8900 AN-635 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		Si8901EDB 8901E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		Si8901EDB 8901E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		Si8901EDB 8901E Si8901EDB-T2-E1 11-Mar-11 PDF

    SI8901

    Abstract: J-STD-020A Si8901EDB
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		Si8901EDB 8901E S-50066--Rev. 17-Jan-05 SI8901 J-STD-020A PDF

    top 8901

    Abstract: SI8901 J-STD-020A
    Text: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY


    Original     		Si8901DB Si8901DB-T2--E3 18-Jul-08 top 8901 SI8901 J-STD-020A PDF

    Bi-Directional P-Channel

    Abstract: SI8901 Si8901EDB Bi-Directional P-Channel mosfet
    Text: SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si8901EDB 19-Apr-04 Bi-Directional P-Channel SI8901 Bi-Directional P-Channel mosfet PDF

    Bi-Directional P-Channel mosfet

    Abstract: SI8901 Si8901EDB
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		Si8901EDB 8901E 18-Jul-08 Bi-Directional P-Channel mosfet SI8901 PDF

    7133 A-1

    Abstract: 7636 SI8901 AN609
    Text: Si8901DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si8901DB AN609 22-Aug-07 7133 A-1 7636 SI8901 PDF

    SI8902

    Abstract: SI8902D-A01-GS si8901
    Text: Si8900/1/2 I SOLA TED M ONITORING ADC Features   ADC 3  input channels 10-bit resolution 2 µs conversion time  Isolated serial I/O port  UART I  2 Si8900 C/SMbus (Si8901) MHz SPI port (Si8902)  2.5


    Original     		Si8900/1/2 10-bit Si8900) Si8901) Si8902) 60-year UL1577 SI8902 SI8902D-A01-GS si8901 PDF

    top 8901

    Abstract: SI8901 bi 370 transistor Bi-Directional P-Channel mosfet J-STD-020A
    Text: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY


    Original     		Si8901DB Si8901DB-T2--E3 S-41820--Rev. 11-Oct-04 top 8901 SI8901 bi 370 transistor Bi-Directional P-Channel mosfet J-STD-020A PDF

    top 8901

    Abstract: No abstract text available
    Text: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY


    Original     		Si8901DB Si8901DB-T2--E3 08-Apr-05 top 8901 PDF

    Bi-Directional P-Channel mosfet

    Abstract: SI8901 Si8901EDB
    Text: SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si8901EDB 18-Jul-08 Bi-Directional P-Channel mosfet SI8901 PDF

    SI8901

    Abstract: No abstract text available
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		Si8901EDB 8901E Si8901EDB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI8901 PDF

    SI8901A

    Abstract: SILICONIX Si8901 SI8901 top 8901 SI8901CY TL3001
    Text: CTSiliconix Si8901 SERIES .^dm in c o r p o r a te d D M O S D o u b le -B a la n c e d M ix e rs T h e Si8901 Ring D e m o d u la to r/B a la n c e d M ixer o ffe rs s ig n ific a n t im p ro v e m e n ts fo r RF m ix e r a p p lic a tio n w h e re low th ird o rd e r h a rm o n ic d is to rtio n ha s b e e n


    OCR Scan     		Si8901 SO-14 8901CHP SI8901A SILICONIX Si8901 top 8901 SI8901CY TL3001 PDF

    SI8901

    Abstract: J-STD-020A Si8901EDB MARKING G2
    Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) IS1S2 (A) 0.060 @ VGS = −4.5 V −4.4 −20 0.080 @ VGS = −2.5 V −3.9 0.105 @ VGS = −1.8 V −3.4 TrenchFETr Power MOSFET


    Original     		Si8901EDB 8901E 08-Apr-05 SI8901 J-STD-020A MARKING G2 PDF

    SI8901

    Abstract: Si8901EDB
    Text: SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si8901EDB S-60073Rev. 23-Jan-06 SI8901 PDF

    SMD resistors 1806

    Abstract: SMD zener diode 202 1N4148WS
    Text: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5


    Original     		HPC0201A HPC0402A HPC0402B/C HPC0603A SMD resistors 1806 SMD zener diode 202 1N4148WS PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB PDF

    Untitled

    Abstract: No abstract text available
    Text: Si890x-PWR-EVB S i890 X D I G I TA L I SOLATOR - B ASED , 1 0 - B IT I SOLATED M ONITORING ADC U SER ’ S G UIDE 1. Introduction The Si890x are isolated ADCs suitable for low-frequency analog data acquisition applications. These devices integrate an isolated 10-bit SAR ADC with I2C, UART, or SPI serial communication ports. Isolation ratings of 2.5 or


    Original     		Si890x-PWR-EVB Si890x 10-bit Si8900 Si890xPWR-EVB Si8900 PDF